JPS5775456A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5775456A JPS5775456A JP55152547A JP15254780A JPS5775456A JP S5775456 A JPS5775456 A JP S5775456A JP 55152547 A JP55152547 A JP 55152547A JP 15254780 A JP15254780 A JP 15254780A JP S5775456 A JPS5775456 A JP S5775456A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pad
- connecting metal
- metal layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 9
- 229910052751 metal Inorganic materials 0.000 abstract 9
- 229910052738 indium Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To avoid generation of unnecessary electric resistance even though the surface of a metal layer is oxidized, by forming the semiconductor to which opposing connecting metal layers are connected by a metal which can be readily alloyed with the connecting metal layer. CONSTITUTION:On a connecting metal pad 7 comprising Al which is formed on an Si substrate 4, the connecting metal layer 8 comprising In is formed via a metal layer 11 comprising Zn. Said metal layer 8 and a connecting metal pad 6 comprising In formed on the compound semiconductor substrate 1 are formed. The pad 7 and the layer 11 are connected, and the layer 11 and the layer 8 formed thereon are connected, with the alloy state being formed, respectively. In this case, Zn is readily alloyed with Al even though the surface of the Al pad is oxidized, and the electric resistance becomes much lower than that in the case In is directly deposited on the Al layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152547A JPS5775456A (en) | 1980-10-29 | 1980-10-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152547A JPS5775456A (en) | 1980-10-29 | 1980-10-29 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5775456A true JPS5775456A (en) | 1982-05-12 |
JPS6322470B2 JPS6322470B2 (en) | 1988-05-12 |
Family
ID=15542839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55152547A Granted JPS5775456A (en) | 1980-10-29 | 1980-10-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5775456A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336744A (en) * | 1989-07-03 | 1991-02-18 | Matsushita Electric Ind Co Ltd | Packaging of radiation detector |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375766A (en) * | 1976-12-16 | 1978-07-05 | Sharp Corp | Mounting construction for semiconductor element |
JPS53141575A (en) * | 1977-05-17 | 1978-12-09 | Seiko Epson Corp | Semiconductor device |
JPS5430787A (en) * | 1977-08-12 | 1979-03-07 | Fujitsu Ltd | Infrared-ray detector |
-
1980
- 1980-10-29 JP JP55152547A patent/JPS5775456A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375766A (en) * | 1976-12-16 | 1978-07-05 | Sharp Corp | Mounting construction for semiconductor element |
JPS53141575A (en) * | 1977-05-17 | 1978-12-09 | Seiko Epson Corp | Semiconductor device |
JPS5430787A (en) * | 1977-08-12 | 1979-03-07 | Fujitsu Ltd | Infrared-ray detector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336744A (en) * | 1989-07-03 | 1991-02-18 | Matsushita Electric Ind Co Ltd | Packaging of radiation detector |
Also Published As
Publication number | Publication date |
---|---|
JPS6322470B2 (en) | 1988-05-12 |
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