JPS575383A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS575383A JPS575383A JP8001380A JP8001380A JPS575383A JP S575383 A JPS575383 A JP S575383A JP 8001380 A JP8001380 A JP 8001380A JP 8001380 A JP8001380 A JP 8001380A JP S575383 A JPS575383 A JP S575383A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- plating
- semiconductor device
- electrode
- metallic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To uniformly form a plating layer on a semiconductor device by selectively plating the selective plating forming surface of the device by forming in advance a metallic film so that a plating current may not flow directly through a P-N junction. CONSTITUTION:An Ag paste 15 as conductive substance is bonded to the side face A of a semiconductor element 20 containing a P-N junction and layers 2, 3, 4, and is conducted to a metallic film 7 and the Ag plaste 12 of the electrode 14 leading unit. A material to be plated is thus formed, a direct current is applied between the electrodes opposed with the electrode 14 and the plated surface,and potential difference is thus eliminated on the P-N junction, and preferable heat sink can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8001380A JPS575383A (en) | 1980-06-13 | 1980-06-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8001380A JPS575383A (en) | 1980-06-13 | 1980-06-13 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575383A true JPS575383A (en) | 1982-01-12 |
Family
ID=13706427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8001380A Pending JPS575383A (en) | 1980-06-13 | 1980-06-13 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575383A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5800026A (en) * | 1994-06-01 | 1998-09-01 | Komatsu Ltd. | Elastic-bodied crawler plate and crawler band |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS497629A (en) * | 1972-05-26 | 1974-01-23 | ||
JPS5191664A (en) * | 1974-10-17 | 1976-08-11 |
-
1980
- 1980-06-13 JP JP8001380A patent/JPS575383A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS497629A (en) * | 1972-05-26 | 1974-01-23 | ||
JPS5191664A (en) * | 1974-10-17 | 1976-08-11 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5800026A (en) * | 1994-06-01 | 1998-09-01 | Komatsu Ltd. | Elastic-bodied crawler plate and crawler band |
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