JPS5735379A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5735379A
JPS5735379A JP3989381A JP3989381A JPS5735379A JP S5735379 A JPS5735379 A JP S5735379A JP 3989381 A JP3989381 A JP 3989381A JP 3989381 A JP3989381 A JP 3989381A JP S5735379 A JPS5735379 A JP S5735379A
Authority
JP
Japan
Prior art keywords
insulating film
main
junction
semiconductor
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3989381A
Other languages
Japanese (ja)
Other versions
JPH048952B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3989381A priority Critical patent/JPS5735379A/en
Publication of JPS5735379A publication Critical patent/JPS5735379A/en
Publication of JPH048952B2 publication Critical patent/JPH048952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To ensure an effective control of a main current by a method wherein a controlling electrode is composed only of the working part with the useless rest removed. CONSTITUTION:A main current flows between main electrodes 8 and 9 provided on both main surfaces of a semiconductor 7. A controlling electrode 10 is formed on the insulating film 11 that is formed on the bottom surface of a well on a main surface and connects the semiconductor 7 to the side walls of the well via a junction 12. Thus, the controlling electrode 10 is formed not only on the junction 12 but also on the insulating film 11. As the junction 12 is formed on the walls of a well, the portion that is of no use in controlling the main current can be made smaller thanks to the intervening insulating film 11, the rate of size reduction corresponding to the ratio of the dielectric constant of the insulating film 11 to that of the semiconductor 7.
JP3989381A 1981-03-19 1981-03-19 Semiconductor device Granted JPS5735379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3989381A JPS5735379A (en) 1981-03-19 1981-03-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3989381A JPS5735379A (en) 1981-03-19 1981-03-19 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11877176A Division JPS5343483A (en) 1976-10-01 1976-10-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735379A true JPS5735379A (en) 1982-02-25
JPH048952B2 JPH048952B2 (en) 1992-02-18

Family

ID=12565638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3989381A Granted JPS5735379A (en) 1981-03-19 1981-03-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735379A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101548946B1 (en) 2008-08-12 2015-09-02 가부시키가이샤 씽크. 라보라토리 Information Display System and Dot Patterning Sheet Used for Same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131482A (en) * 1974-04-02 1975-10-17
JPS50131478A (en) * 1974-04-03 1975-10-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50131482A (en) * 1974-04-02 1975-10-17
JPS50131478A (en) * 1974-04-03 1975-10-17

Also Published As

Publication number Publication date
JPH048952B2 (en) 1992-02-18

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