JPS5312270A - Pressrue-contact type semiconductor control unit - Google Patents

Pressrue-contact type semiconductor control unit

Info

Publication number
JPS5312270A
JPS5312270A JP8605376A JP8605376A JPS5312270A JP S5312270 A JPS5312270 A JP S5312270A JP 8605376 A JP8605376 A JP 8605376A JP 8605376 A JP8605376 A JP 8605376A JP S5312270 A JPS5312270 A JP S5312270A
Authority
JP
Japan
Prior art keywords
pressrue
control unit
type semiconductor
contact type
semiconductor control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8605376A
Other languages
Japanese (ja)
Inventor
Hisao Udagawa
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON INTAANASHIYONARU SEIRIY
Meidensha Electric Manufacturing Co Ltd
International Rectifier Corp Japan Ltd
Original Assignee
NIPPON INTAANASHIYONARU SEIRIY
Meidensha Electric Manufacturing Co Ltd
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON INTAANASHIYONARU SEIRIY, Meidensha Electric Manufacturing Co Ltd, International Rectifier Corp Japan Ltd filed Critical NIPPON INTAANASHIYONARU SEIRIY
Priority to JP8605376A priority Critical patent/JPS5312270A/en
Publication of JPS5312270A publication Critical patent/JPS5312270A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: Utilizing the superfluous space on the main surface of the semiconductor pellet, an auziliary electrode is provided by way of an insulation layer and, together with the main electrode, is given pressure, so that pressure force per unit area will be made smaller and shorting to the control electrode due to deformation of the main electrode can be prevented.
COPYRIGHT: (C)1978,JPO&Japio
JP8605376A 1976-07-21 1976-07-21 Pressrue-contact type semiconductor control unit Pending JPS5312270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8605376A JPS5312270A (en) 1976-07-21 1976-07-21 Pressrue-contact type semiconductor control unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8605376A JPS5312270A (en) 1976-07-21 1976-07-21 Pressrue-contact type semiconductor control unit

Publications (1)

Publication Number Publication Date
JPS5312270A true JPS5312270A (en) 1978-02-03

Family

ID=13875931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8605376A Pending JPS5312270A (en) 1976-07-21 1976-07-21 Pressrue-contact type semiconductor control unit

Country Status (1)

Country Link
JP (1) JPS5312270A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739576A (en) * 1980-08-21 1982-03-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPS59159962U (en) * 1983-04-12 1984-10-26 東洋電機製造株式会社 Electrodes of semiconductor devices
JPS615533A (en) * 1984-06-20 1986-01-11 Hitachi Ltd Pressure-contact type semiconductor device
US4618877A (en) * 1983-12-21 1986-10-21 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
JPH03222365A (en) * 1990-01-26 1991-10-01 Toshiba Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5739576A (en) * 1980-08-21 1982-03-04 Mitsubishi Electric Corp Gate turn-off thyristor
JPS59159962U (en) * 1983-04-12 1984-10-26 東洋電機製造株式会社 Electrodes of semiconductor devices
US4618877A (en) * 1983-12-21 1986-10-21 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
JPS615533A (en) * 1984-06-20 1986-01-11 Hitachi Ltd Pressure-contact type semiconductor device
JPH03222365A (en) * 1990-01-26 1991-10-01 Toshiba Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS5425178A (en) Manufacture for semiconductor device
JPS5591862A (en) Semiconductor device
JPS5312270A (en) Pressrue-contact type semiconductor control unit
JPS54576A (en) Electronic parts
JPS527675A (en) Semiconductor device
JPS5354190A (en) Ozonizer
JPS52154358A (en) Production of semiconductor device
JPS51114069A (en) Semiconductor device
JPS53126270A (en) Production of semiconductor devices
JPS5359366A (en) Semiconductor unit
JPS53132281A (en) Semiconductor memory device
JPS5468162A (en) Semiconductor device
JPS5364467A (en) Electrode
JPS535571A (en) Circuit block and its manufacture
JPS5419374A (en) Semiconductor device
JPS5211772A (en) Semiconductor device
JPS5353973A (en) Semiconductor device
JPS5383476A (en) Reverse conducting thyristor
JPS51118965A (en) Insulation film of semiconductor device
JPS52154375A (en) Semiconductor device
JPS52142484A (en) Production of semiconductor device
JPS5387676A (en) Semiconductor control rectifier
JPS5386164A (en) Production of semiconductor device
JPS52101978A (en) Preparation of semiconductor device on insulating substrate
JPS5410683A (en) Production of smiconductor device