JPS52154377A - Forming method for contact parts in part of shallow diffused layer - Google Patents

Forming method for contact parts in part of shallow diffused layer

Info

Publication number
JPS52154377A
JPS52154377A JP7109476A JP7109476A JPS52154377A JP S52154377 A JPS52154377 A JP S52154377A JP 7109476 A JP7109476 A JP 7109476A JP 7109476 A JP7109476 A JP 7109476A JP S52154377 A JPS52154377 A JP S52154377A
Authority
JP
Japan
Prior art keywords
diffused layer
forming method
contact parts
layer
shallow diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7109476A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7109476A priority Critical patent/JPS52154377A/en
Priority to DE19772726004 priority patent/DE2726004A1/en
Priority to NL7706436A priority patent/NL7706436A/en
Publication of JPS52154377A publication Critical patent/JPS52154377A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/385—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE: To obtain short-channel MOSFET by forming a deep diffused layer through thermal diffusion via poly-Si layer to make the layer readily connectable to Al electrodes and forming a shallow diffused layer with easy controlling through ion implantation.
COPYRIGHT: (C)1977,JPO&Japio
JP7109476A 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer Pending JPS52154377A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7109476A JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer
DE19772726004 DE2726004A1 (en) 1976-06-18 1977-06-08 Metal insulator semiconductor field effect transistor prodn. - including formation of diffused zones designed to increase switching speed (NL 20.12.77)
NL7706436A NL7706436A (en) 1976-06-18 1977-06-10 PROCEDURE FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE WITH A CONTACTS ON A PART OF A SHALLOW DIFFUSION LAYER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109476A JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer

Publications (1)

Publication Number Publication Date
JPS52154377A true JPS52154377A (en) 1977-12-22

Family

ID=13450596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7109476A Pending JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer

Country Status (3)

Country Link
JP (1) JPS52154377A (en)
DE (1) DE2726004A1 (en)
NL (1) NL7706436A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110383A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912858A1 (en) * 1979-03-30 1980-10-09 Siemens Ag LOW RESISTANT PIPE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110383A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE2726004A1 (en) 1977-12-22
NL7706436A (en) 1977-12-20

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