JPS5797686A - Light emitting element pellet - Google Patents
Light emitting element pelletInfo
- Publication number
- JPS5797686A JPS5797686A JP17421580A JP17421580A JPS5797686A JP S5797686 A JPS5797686 A JP S5797686A JP 17421580 A JP17421580 A JP 17421580A JP 17421580 A JP17421580 A JP 17421580A JP S5797686 A JPS5797686 A JP S5797686A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- film
- light emitting
- emitting element
- roughing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000008188 pellet Substances 0.000 title abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 238000003909 pattern recognition Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To facilitate the pattern recognition of a light emitting element pellet used for an automatic recognition bonder by roughing the main surface of a semiconductor material of the part for disturbing the pattern recognition of a bonding pad to lower the reflectivity. CONSTITUTION:A P-N junction is formed by liquid epitaxial growth on an N type semiconductor substrate on a gallium phosphide wafer 4, a silicon oxidized film is coated on the wafer 4, only circular oxidized film 3 remains by a photoresist method, the wafer 4 is then boiled with hydrochloric acid for 2-3 min to remove the part covered with the film 3, thereby roughing the crystalline surface. Then, the film 3 is removed, zinc is diffused in the wafer 4 to enhance the surface density, aluminum is deposited, is heat treated, and pattern is formed as P type side electrodes 2, 2'. At this time the size of the circular electrode 2 is formed with the same size as the film 3. Then, the back surface of the wafer 4 is surface-treated to form an N type side ohmic contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17421580A JPS5797686A (en) | 1980-12-10 | 1980-12-10 | Light emitting element pellet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17421580A JPS5797686A (en) | 1980-12-10 | 1980-12-10 | Light emitting element pellet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5797686A true JPS5797686A (en) | 1982-06-17 |
Family
ID=15974733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17421580A Pending JPS5797686A (en) | 1980-12-10 | 1980-12-10 | Light emitting element pellet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797686A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395260U (en) * | 1986-12-11 | 1988-06-20 | ||
| US5053850A (en) * | 1988-03-14 | 1991-10-01 | Motorola, Inc. | Bonding pad for semiconductor devices |
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6872649B2 (en) | 1999-04-15 | 2005-03-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film |
| CN100449805C (en) * | 2006-11-08 | 2009-01-07 | 吴质朴 | AlGaInP compound semiconductor luminant and its making method |
| CN102214625A (en) * | 2010-04-01 | 2011-10-12 | 华上光电股份有限公司 | Semiconductor wafer electrode structure and manufacturing method thereof |
-
1980
- 1980-12-10 JP JP17421580A patent/JPS5797686A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6395260U (en) * | 1986-12-11 | 1988-06-20 | ||
| US5053850A (en) * | 1988-03-14 | 1991-10-01 | Motorola, Inc. | Bonding pad for semiconductor devices |
| US5309001A (en) * | 1991-11-25 | 1994-05-03 | Sharp Kabushiki Kaisha | Light-emitting diode having a surface electrode of a tree-like form |
| US6872649B2 (en) | 1999-04-15 | 2005-03-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film |
| US6876003B1 (en) | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
| CN100449805C (en) * | 2006-11-08 | 2009-01-07 | 吴质朴 | AlGaInP compound semiconductor luminant and its making method |
| CN102214625A (en) * | 2010-04-01 | 2011-10-12 | 华上光电股份有限公司 | Semiconductor wafer electrode structure and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4902356A (en) | Epitaxial substrate for high-intensity led, and method of manufacturing same | |
| US4080245A (en) | Process for manufacturing a gallium phosphide electroluminescent device | |
| JPS5797686A (en) | Light emitting element pellet | |
| GB1530085A (en) | Semiconductor device manufacture | |
| JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
| JPH0531317B2 (en) | ||
| JPH02254773A (en) | Manufacture of light emitting diode | |
| JPS5630777A (en) | Manufacture of light emitting diode chip | |
| JPS5742179A (en) | Semiconductor device with recognition pattern | |
| JPS54123887A (en) | Photo integrated citcuit | |
| JPS57133686A (en) | Semiconductor light emitting element and manufacture thereof | |
| JPS54162457A (en) | Electrode forming method for semiconductor element | |
| JPS5642390A (en) | Formation of electrode on semiconductor device | |
| JPS55165689A (en) | Preparation of light emission semiconductor device | |
| JPS59112666A (en) | Manufacture of light emitting element | |
| JPS54127691A (en) | Semiconductor light emission device | |
| JPS5931972B2 (en) | Liquid phase epitaxial growth method | |
| JPS5797630A (en) | Manufacture of semiconductor device | |
| JPS5732685A (en) | Manufacture of planar compound semiconductor single crystal | |
| JPS54134586A (en) | Production of solar battery using compound semiconductor crystal | |
| JPS5793544A (en) | Manufacture of compound semiconductor device | |
| JPS57166088A (en) | Electrode of luminus diode | |
| JPS5746226B2 (en) | ||
| JPS56164589A (en) | Semiconductor laser | |
| JPS5618466A (en) | Manufacture of semiconductor device |