JPS59112666A - Manufacture of light emitting element - Google Patents
Manufacture of light emitting elementInfo
- Publication number
- JPS59112666A JPS59112666A JP57222467A JP22246782A JPS59112666A JP S59112666 A JPS59112666 A JP S59112666A JP 57222467 A JP57222467 A JP 57222467A JP 22246782 A JP22246782 A JP 22246782A JP S59112666 A JPS59112666 A JP S59112666A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- epitaxial layer
- emitting element
- forward voltage
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 8
- 230000007423 decrease Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000008188 pellet Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、高発光効率を有しかつ低重圧１し源で動作
が可能な発光素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a light emitting element that has high luminous efficiency and can be operated with a low pressure and one source.
〔発明の技術的背景とその間照点コ
一般に、例エバテレビのリモートコントロール装置等に
用いられ赤外発光信号によってチャンネル切換え号の制
御を行なうものにおいては、乾鴫池等の低′亀圧で動作
が可能でかつ高発゛光効率を有する発光素子が望まれて
いる。このような発光素子は、従来第１図（、）〜（ｃ
）に示すような工程で形成される。すなわち、（ａ）図
に示すようにＮ形の半導体基板１１上にＰ形のエピタキ
シャル層１２を形成し、このエピタキシャル層１２上に
アルミニウム等の金属薄膜を被着してパターニングを行
ないアノード電極１３ 、 ｌ ３゜・・・を形成する
とともに、基板１ノの他方の面（裏面）に金属薄膜を被
着してカソード成極１４を形成して（ｂ）図に示すよう
な発光素子群を得る。次に、発光面に凹凸を形成して光
音乱反射させて発光効率を上げるため、燐酸系のエツチ
ング液でアノード電極１３，１３．・・・を形成したエ
ピタキシャル層１２の露出面１２′のエツチングを行な
った後、（ｂ）図の破線に沿ってグイシングし、（Ｃ）
図に示すように各々のベレットに分割する。[Technical Background of the Invention and Point of View] In general, devices that control channel switching signals using infrared light emitting signals, such as those used in remote control devices for EVA TV, operate at low tortoise pressures such as those in dry water ponds. There is a demand for a light-emitting element that is capable of emitting light and has high luminous efficiency. Conventionally, such light emitting elements are shown in Figures 1(,) to (c).
) is formed by the process shown in That is, as shown in the figure (a), a P-type epitaxial layer 12 is formed on an N-type semiconductor substrate 11, and a metal thin film such as aluminum is deposited on this epitaxial layer 12 and patterned to form an anode electrode 13. , l 3°... and depositing a metal thin film on the other surface (back surface) of the substrate 1 to form a cathode polarization 14 to form a light emitting element group as shown in the figure (b). obtain. Next, a phosphoric acid-based etching solution is applied to the anode electrodes 13, 13, . After etching the exposed surface 12' of the epitaxial layer 12 on which... is formed, etching is performed along the broken line in FIG.
Divide into each pellet as shown.
なお、Ｎ形基板１ノとＰ形のエピタキシャル層１２との
不純物濃度を同程度に設足して発光効率を上昇させるた
め、必要に応じてＮ形基板１１とＰ形エピタキシャル層
１２との間にＮ形のエピタキシャル層を形成している。Note that in order to increase the luminous efficiency by setting the impurity concentrations of the N-type substrate 1 and the P-type epitaxial layer 12 to the same level, a layer may be added between the N-type substrate 11 and the P-type epitaxial layer 12 as necessary. An N-type epitaxial layer is formed.
しかし、上記のような工程で形成された発光素子は、発
光面（Ｐ形エピタキシャル層１２の諾出ｉｚ２’）のエ
ツチング工程において、第２図にＡ、Ａとして示すよう
にアノード電極１３の側方へもエツチング液が入シ込ん
でサイドエツチングされる。このだめ、アノード電極１
３とエピタキシャル層１２（ψ１］えばＧａＡｓ） ト
ノｇ触面積が小さくなシ、素子の順電圧ｖＦが高くなる
ので、高い電源電圧が必要となる。However, in the light-emitting element formed in the above process, in the etching process of the light-emitting surface (the protrusion iz2' of the P-type epitaxial layer 12), the side of the anode electrode 13 is etched as shown as A and A in FIG. Etching liquid also enters the side, causing side etching. This dump, anode electrode 1
3 and the epitaxial layer 12 (ψ1], for example, GaAs).Since the contact area is small, the forward voltage vF of the element is high, so a high power supply voltage is required.
このような接触面積の低下による順電圧ｖＦの上昇を防
止するためには、予めサイドエツチングを見込んで大き
なアノード電極を形成すれば良いが、発光面積が減少す
るため発光効率が低下し、同じ発光量を得ようとすると
一枚のウェハから得られるチップ数が減少する欠点があ
る。In order to prevent an increase in the forward voltage vF due to such a reduction in contact area, it is possible to form a large anode electrode in advance with side etching in mind. If you try to increase the amount, there is a drawback that the number of chips that can be obtained from one wafer decreases.
すた、サイドエツチングを防止するだめにアノード電極
１３およびこの電極１３とエピタキシャル層１２との接
点を壬ッチンノされない材質から成る保護膜で被覆して
からエツチングすることも考えられているが、保護膜の
被覆工程が必要となるのみならず、この保護膜の剥離が
困難である。In order to prevent side etching, it has been considered to cover the anode electrode 13 and the contact point between this electrode 13 and the epitaxial layer 12 with a protective film made of a material that will not be etched before etching. Not only does this require a coating step, but it is also difficult to peel off this protective film.
この発明は上記のような事情に鑑みてなされたもので、
その目的とするところは、高発光効率でかつ頭取圧が低
いとともに素子の小形化により低コスト化も可能な発光
素子の製造方法を提供することである。This invention was made in view of the above circumstances,
The objective is to provide a method for manufacturing a light emitting element that has high luminous efficiency and low head pressure, and can also reduce costs by downsizing the element.
すなわち、この発明においては、半導体基板上に通導′
岨形のエピタキシャル層を形成し、このエピタキシャル
層の表面をエツチングした後このエツチング面上にアノ
ード成極を形成するとともに半導体基板の他方の而（裏
面）にもカソード電極を形成するものである。That is, in this invention, a conductive layer is formed on a semiconductor substrate.
After forming a slope-shaped epitaxial layer and etching the surface of this epitaxial layer, an anode is formed on the etched surface, and a cathode electrode is also formed on the other side (back surface) of the semiconductor substrate.
〔発明の実２Ｉｆ！ｉ例〕
以下、この発明の一実施例について図面を参照して説明
する。第３図（ａ）〜（ｄ）はその製造工程を示すもの
で、まず、（ａ）図に示すようにＮ形の半導体基板１ノ
上にＰ形のエピタキシャル層１２を形ｔｉｙ、’ Ｌ
、このエピタキシャル層１２の表面に燐ｆＭ２系のエツ
チング液によってエツチングを施し、（ｂ） ｌｘｌに
示すようにエビクキシャル層１２０表面に微細な凹凸を
形成する。次に、（Ｃ）図に示すようにエピタキシャル
層１２上に亜鉛Ｚｎ等を拡散して高濃度層１５：ｆ：形
成する。これは、ウェハ状態でエツチングを施すとＰ形
エピタキシャル層１２の５１Ｍｔが低下し、次の工程で
アノード酸・−を形成する時コンタクト抵抗が大きくな
って発光素子の順電圧■、が上昇するためである。そし
て、（ｄ）図に示すようにエビタギシャル１１１２に形
成した高濃度層１５上に金属薄膜を被着してパターニン
グを行フよいアノード酸ｉ １３ 、１３ 、・・・を
形成するとともに基板１ノの曲刃の面（裏面）に金属薄
膜を被着してカソード電極１４を形成して発光素子鼾を
碍る。次Ｑこ、上記（ｄ）図Ｑ（おける破線に沿ってダ
イソングし、各々のペレットに分割する。[The Fruit of Invention 2 If! Example i] Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIGS. 3(a) to 3(d) show the manufacturing process. First, as shown in FIG. 3(a), a P-type epitaxial layer 12 is formed on an N-type semiconductor substrate 1.
The surface of the epitaxial layer 12 is etched using a phosphorus-fM2-based etching solution to form fine irregularities on the surface of the epitaxial layer 120 as shown in (b) lxl. Next, as shown in the figure (C), zinc Zn or the like is diffused onto the epitaxial layer 12 to form a high concentration layer 15:f:. This is because when etching is performed in the wafer state, the 51Mt of the P-type epitaxial layer 12 decreases, and when an anodic acid layer 12 is formed in the next step, the contact resistance increases and the forward voltage of the light emitting element increases. It is. Then, as shown in the figure (d), a metal thin film is deposited and patterned on the high concentration layer 15 formed on the evitagital layer 1112 to form good anodic acids i 13 , 13 , . . . on the substrate 1. The cathode electrode 14 is formed by depositing a metal thin film on the surface (back surface) of the curved blade to improve the light emitting element snoring. Next, dice the pellets along the broken lines in Figure Q (d) above to separate them into individual pellets.
なお、前述したようにＮ形の半導体基板１）上にＰ形の
エピタキシャル層１２を形成する前に、基板１１上にＮ
形のエピタキシャル層を形成し、このＮ形エピタキシャ
ル層上にＰ形のエピタキシャル層１２を積層形成しても
良い。Note that, as described above, before forming the P-type epitaxial layer 12 on the N-type semiconductor substrate 1),
A type epitaxial layer may be formed, and a P type epitaxial layer 12 may be laminated on this N type epitaxial layer.
上述したような工程によれば、電極を形成する前ニ予め
エピタキシャル層１２の表面にエツチングを行なうので
、サイドエツチングによる発光素子の順電圧■、の低下
はなく、電極の面積をサイドエツチングを見込んで大き
く設計する必沙もないので、一枚のウエノ・から得られ
る素子数を増加できコストの低減が図れる。また、製造
工程がａ雑化するとともない。According to the process described above, since the surface of the epitaxial layer 12 is etched in advance before forming the electrodes, the forward voltage (2) of the light emitting element does not decrease due to side etching, and the area of the electrodes is adjusted to accommodate the side etching. Since there is no need to design a large wafer, the number of elements obtained from one sheet of Ueno can be increased and costs can be reduced. Moreover, as the manufacturing process becomes more complex.
この発明によれば、従来の方法では、エツチングを施さ
ないものに比べて発光効率を１．５倍程度向上しようと
すると順電圧■、が高くなってしまうのに対し、１．８
〜２倍程度に向上でき、しかも素子の順電圧ｖＦは従来
レベルと同等であった。According to this invention, in the conventional method, when trying to improve the luminous efficiency by about 1.5 times compared to the one without etching, the forward voltage (1) becomes higher, whereas the forward voltage (1) increases by 1.8 times.
It was possible to improve the voltage by about 2 times, and the forward voltage vF of the element was at the same level as the conventional level.
以上説明したようにこの発明によれば、高発光効率でか
つ順電圧が低いとともに素子の小形化による低コスト化
も可能な発光素子の製造方法が得られる。As described above, according to the present invention, a method for manufacturing a light emitting element can be obtained that has high luminous efficiency and low forward voltage, and can also reduce costs by downsizing the element.
第１図は従来の発光素子の製造方法を説明するだめの図
、第２図はサイドエツチノグを説明するための図、第３
図はこの発明の一実施νりに係る発光素子の製造方法を
説明するだめの図である。
１１・・・半導体基板、１２・・・エピタキシャル層、
１３・・・アノード電極、１４・・・カソード電極。
出願人代理人 弁理士 鈴 江 武 彦牙１図
牙３図Figure 1 is a diagram for explaining the conventional manufacturing method of a light emitting element, Figure 2 is a diagram for explaining a side etching nog, and Figure 3 is a diagram for explaining a side etch nog.
The figure is a diagram for explaining a method of manufacturing a light emitting device according to one embodiment of the present invention. 11... Semiconductor substrate, 12... Epitaxial layer,
13... Anode electrode, 14... Cathode electrode. Applicant's agent Patent attorney Takeshi Suzue Hikoga 1 picture 3 pictures
Claims (1)
成する工程と、上記エピタキシャル層の表向にエツチン
グを施して凹凸を形成する工程と、上記エツチングを施
したエピタキシャル層および半導体基板の裏面それぞれ
に蒐１銘を形成する工程とを具備して成ることを詩歌と
する発光素子の製造方法。A step of forming an epitaxial layer of opposite conductivity type on the surface of the semiconductor substrate, a step of etching the front surface of the epitaxial layer to form unevenness, and a step of forming an uneven layer on the etched epitaxial layer and the back surface of the semiconductor substrate, respectively. 1. A method for manufacturing a light-emitting element, which comprises the steps of forming a poem.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57222467A JPS59112666A (en) | 1982-12-18 | 1982-12-18 | Manufacture of light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57222467A JPS59112666A (en) | 1982-12-18 | 1982-12-18 | Manufacture of light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59112666A true JPS59112666A (en) | 1984-06-29 |
Family
ID=16782869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57222467A Pending JPS59112666A (en) | 1982-12-18 | 1982-12-18 | Manufacture of light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59112666A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014007179A (en) * | 2012-06-21 | 2014-01-16 | Panasonic Corp | Method for manufacturing vertical structure light-emitting element |
-
1982
- 1982-12-18 JP JP57222467A patent/JPS59112666A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014007179A (en) * | 2012-06-21 | 2014-01-16 | Panasonic Corp | Method for manufacturing vertical structure light-emitting element |
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