CN100449805C - AlGaInP compound semiconductor luminant and its making method - Google Patents
AlGaInP compound semiconductor luminant and its making method Download PDFInfo
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- CN100449805C CN100449805C CNB2006100635467A CN200610063546A CN100449805C CN 100449805 C CN100449805 C CN 100449805C CN B2006100635467 A CNB2006100635467 A CN B2006100635467A CN 200610063546 A CN200610063546 A CN 200610063546A CN 100449805 C CN100449805 C CN 100449805C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 18
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 238000003466 welding Methods 0.000 claims abstract description 33
- 229920002120 photoresistant polymer Polymers 0.000 claims description 39
- 238000001259 photo etching Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 15
- 238000012546 transfer Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 238000011161 development Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100635467A CN100449805C (en) | 2006-11-08 | 2006-11-08 | AlGaInP compound semiconductor luminant and its making method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2006100635467A CN100449805C (en) | 2006-11-08 | 2006-11-08 | AlGaInP compound semiconductor luminant and its making method |
Publications (2)
Publication Number | Publication Date |
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CN101017867A CN101017867A (en) | 2007-08-15 |
CN100449805C true CN100449805C (en) | 2009-01-07 |
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CNB2006100635467A Active CN100449805C (en) | 2006-11-08 | 2006-11-08 | AlGaInP compound semiconductor luminant and its making method |
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CN (1) | CN100449805C (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569619B (en) * | 2011-12-30 | 2016-11-23 | 鸿利智汇集团股份有限公司 | A kind of manufacture method of COB light source |
CN104037279A (en) * | 2014-07-01 | 2014-09-10 | 厦门市三安光电科技有限公司 | Method for manufacturing light emitting diode (LED) with current blocking layer |
CN105355750A (en) * | 2015-11-30 | 2016-02-24 | 广东德力光电有限公司 | LED luminescence chip employing photoresist as protection layer and manufacturing method |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797686A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Light emitting element pellet |
JPS615585A (en) * | 1984-06-19 | 1986-01-11 | Rohm Co Ltd | Light-emitting semiconductor element and manufacture thereof |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6958496B2 (en) * | 2003-10-15 | 2005-10-25 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
US20060033113A1 (en) * | 2004-08-11 | 2006-02-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting diode and method of manufacturing the same |
US20060091565A1 (en) * | 2004-11-04 | 2006-05-04 | Slater David B Jr | LED with self aligned bond pad |
CN1828959A (en) * | 2005-03-04 | 2006-09-06 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
-
2006
- 2006-11-08 CN CNB2006100635467A patent/CN100449805C/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797686A (en) * | 1980-12-10 | 1982-06-17 | Nec Corp | Light emitting element pellet |
JPS615585A (en) * | 1984-06-19 | 1986-01-11 | Rohm Co Ltd | Light-emitting semiconductor element and manufacture thereof |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
US6958496B2 (en) * | 2003-10-15 | 2005-10-25 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
US20060033113A1 (en) * | 2004-08-11 | 2006-02-16 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting diode and method of manufacturing the same |
US20060091565A1 (en) * | 2004-11-04 | 2006-05-04 | Slater David B Jr | LED with self aligned bond pad |
CN1828959A (en) * | 2005-03-04 | 2006-09-06 | 斯坦雷电气株式会社 | Semiconductor light emitting device |
CN1688030A (en) * | 2005-03-28 | 2005-10-26 | 金芃 | Vertical structure semiconductor chip or device growthing on silicone substrate |
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CN101017867A (en) | 2007-08-15 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090320 Address after: Guangdong Province, Shenzhen city Baoan District West Township Hezhou Hung Industrial Park B building 3 floor Patentee after: Shenzhen Orient Technology Co., Ltd. Address before: Guangdong city of Shenzhen province Baoan District Xixiang Hezhou Hung Industrial Park 1 Building 3 floor Patentee before: Wu Zhipu |
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ASS | Succession or assignment of patent right |
Owner name: SHENZHEN CITY AOLUNDE SCIENCE CO., LTD. Free format text: FORMER OWNER: WU ZHIPO Effective date: 20090320 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shenzhen Aolunde Opto-Electric Co., Ltd. Assignor: Shenzhen Orient Technology Co., Ltd. Contract record no.: 2012440020017 Denomination of invention: AlGaInP compound semiconductor luminant and its making method Granted publication date: 20090107 License type: Exclusive License Open date: 20070815 Record date: 20120222 |
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CP01 | Change in the name or title of a patent holder |
Address after: 518000 3rd Floor, Building B, Hongtu Industrial Park, Hezhou, West Township, Baoan District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN ORIENT TECHNOLOGY CO., LTD. Address before: 518000 3rd Floor, Building B, Hongtu Industrial Park, Hezhou, West Township, Baoan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Orient Technology Co., Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
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Effective date of registration: 20200525 Address after: 518172 floor 3, building B, No.1, Tian'an digital business park, Huangge Road, Longcheng street, Longgang District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN ORIENT COMPONENTS Co.,Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District West Township Hezhou Hung Industrial Park B building 3 floor Patentee before: SHENZHEN ORIENT TECHNOLOGY Co.,Ltd. |
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