JPS5775472A - Light emitting element - Google Patents

Light emitting element

Info

Publication number
JPS5775472A
JPS5775472A JP15179380A JP15179380A JPS5775472A JP S5775472 A JPS5775472 A JP S5775472A JP 15179380 A JP15179380 A JP 15179380A JP 15179380 A JP15179380 A JP 15179380A JP S5775472 A JPS5775472 A JP S5775472A
Authority
JP
Japan
Prior art keywords
layer
electrode
nonalloy
luminous region
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15179380A
Other languages
Japanese (ja)
Inventor
Tomoki Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15179380A priority Critical patent/JPS5775472A/en
Publication of JPS5775472A publication Critical patent/JPS5775472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent a deterioration in element caused by a decrease in light reflection factor at an electrode and an alloy by a method wherein the surface of the lower part at a luminous region in the semiconductor surface close to the luminous region is composed of electrode structure which does not alloy a semiconductor and a metal. CONSTITUTION:A Cd diffusion layer 7 is formed in a P-InP layer 5 and an N-InP layer 6, and AuZn 8 is alloyed on the surface of the layer 6 except the lower part at a luminous region 4. Furthermore, nonalloy anode electrode 9 is adhered on the layer 6, then, the electrode 9 is adhered to a heat sink 10. Therefore, the electrode 9 corresponding to an nonalloy reflective layer is directly adhered to the surface of the layer 6 at the lower part of the region 4. In this way, light output is progressed by the improvement of light reflection effect at the nonalloy reflective layer. Furthermore, no deterioration in element occurs as no distortion by alloy exists at the lower part of the luminous region.
JP15179380A 1980-10-29 1980-10-29 Light emitting element Pending JPS5775472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15179380A JPS5775472A (en) 1980-10-29 1980-10-29 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15179380A JPS5775472A (en) 1980-10-29 1980-10-29 Light emitting element

Publications (1)

Publication Number Publication Date
JPS5775472A true JPS5775472A (en) 1982-05-12

Family

ID=15526410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15179380A Pending JPS5775472A (en) 1980-10-29 1980-10-29 Light emitting element

Country Status (1)

Country Link
JP (1) JPS5775472A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2323208A (en) * 1995-12-21 1998-09-16 Hewlett Packard Co Reflective contact for light emitting semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040951A (en) * 1973-08-15 1975-04-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040951A (en) * 1973-08-15 1975-04-15

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2323208A (en) * 1995-12-21 1998-09-16 Hewlett Packard Co Reflective contact for light emitting semiconductor device
GB2323208B (en) * 1995-12-21 2000-07-26 Hewlett Packard Co Reflective contact for light emitting semiconductor device

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