JPS57126190A - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element

Info

Publication number
JPS57126190A
JPS57126190A JP1113281A JP1113281A JPS57126190A JP S57126190 A JPS57126190 A JP S57126190A JP 1113281 A JP1113281 A JP 1113281A JP 1113281 A JP1113281 A JP 1113281A JP S57126190 A JPS57126190 A JP S57126190A
Authority
JP
Japan
Prior art keywords
type
cap layer
layer
projection
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1113281A
Other languages
Japanese (ja)
Other versions
JPS6237903B2 (en
Inventor
Toshikimi Takagi
Toshiro Hayakawa
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1113281A priority Critical patent/JPS57126190A/en
Publication of JPS57126190A publication Critical patent/JPS57126190A/en
Publication of JPS6237903B2 publication Critical patent/JPS6237903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Abstract

PURPOSE:To reduce a threshold current and improve an element life by a method wherein in a light emitting element which has an upside down type mounted structure and current squeezing means for getting a minute radiating light, a partial uneven region is provided on a region except a current path on the element surface on which mounting is done. CONSTITUTION:On an N type GaAs substrate 11, an N type Ga1-yAlyAs clad layer 12, a P type Ga1-xAlxAs active layer 13, a P type Ga1-yAlyAs clad layer 14 and GaAs cap layer 15 are grown to be laminated. Next a plurality of striped projection 15' are formed on the uppermost layer that is the cap layer 15, and all over it an Al2O3 oxide film 16 is applied. Subsequently the projection 15' is covered with an electrode 17 on P side extended onto the film 16, and all over the rear surface of the substrate 11 an electrode 18 on N side is attached. By this method strains on mounting is decreased by providing the projection within the cap layer 15 outside the current path, and in addition to decreasing a driving current through decreasing an effective cap layer thickness, a diameter of an oscillating spot light is reduced to a half of a normal value.
JP1113281A 1981-01-27 1981-01-27 Semiconductor light emitting element Granted JPS57126190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1113281A JPS57126190A (en) 1981-01-27 1981-01-27 Semiconductor light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1113281A JPS57126190A (en) 1981-01-27 1981-01-27 Semiconductor light emitting element

Publications (2)

Publication Number Publication Date
JPS57126190A true JPS57126190A (en) 1982-08-05
JPS6237903B2 JPS6237903B2 (en) 1987-08-14

Family

ID=11769483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1113281A Granted JPS57126190A (en) 1981-01-27 1981-01-27 Semiconductor light emitting element

Country Status (1)

Country Link
JP (1) JPS57126190A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239678A (en) * 1989-03-13 1990-09-21 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114092A (en) * 1978-02-24 1979-09-05 Sharp Corp Structure of semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54114092A (en) * 1978-02-24 1979-09-05 Sharp Corp Structure of semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02239678A (en) * 1989-03-13 1990-09-21 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6237903B2 (en) 1987-08-14

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