GB2323208B - Reflective contact for light emitting semiconductor device - Google Patents

Reflective contact for light emitting semiconductor device

Info

Publication number
GB2323208B
GB2323208B GB9624934A GB9624934A GB2323208B GB 2323208 B GB2323208 B GB 2323208B GB 9624934 A GB9624934 A GB 9624934A GB 9624934 A GB9624934 A GB 9624934A GB 2323208 B GB2323208 B GB 2323208B
Authority
GB
United Kingdom
Prior art keywords
light emitting
semiconductor device
emitting semiconductor
reflective contact
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9624934A
Other versions
GB9624934D0 (en
GB2323208A (en
Inventor
Roland H Haitz
Jr Fred A Kish
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of GB9624934D0 publication Critical patent/GB9624934D0/en
Publication of GB2323208A publication Critical patent/GB2323208A/en
Application granted granted Critical
Publication of GB2323208B publication Critical patent/GB2323208B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
GB9624934A 1995-12-21 1996-11-29 Reflective contact for light emitting semiconductor device Expired - Fee Related GB2323208B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/576,251 US5917202A (en) 1995-12-21 1995-12-21 Highly reflective contacts for light emitting semiconductor devices

Publications (3)

Publication Number Publication Date
GB9624934D0 GB9624934D0 (en) 1997-01-15
GB2323208A GB2323208A (en) 1998-09-16
GB2323208B true GB2323208B (en) 2000-07-26

Family

ID=24303600

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9624934A Expired - Fee Related GB2323208B (en) 1995-12-21 1996-11-29 Reflective contact for light emitting semiconductor device

Country Status (5)

Country Link
US (1) US5917202A (en)
JP (1) JPH09186365A (en)
DE (1) DE19648309B4 (en)
GB (1) GB2323208B (en)
SG (1) SG63673A1 (en)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432278B2 (en) 1997-03-26 2002-08-13 The Institute Of Physical And Chemical Research Method for controlling refractive index of silica glass
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6194743B1 (en) * 1997-12-15 2001-02-27 Agilent Technologies, Inc. Nitride semiconductor light emitting device having a silver p-contact
EP2315277A3 (en) * 1998-07-28 2018-01-10 Philips Lighting Holding B.V. Devices for emitting radiation with a high efficiency
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
JP3770014B2 (en) 1999-02-09 2006-04-26 日亜化学工業株式会社 Nitride semiconductor device
KR100683877B1 (en) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Laser Element
US6222207B1 (en) 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
DE10051465A1 (en) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Method for producing a GaN-based semiconductor component
WO2001082384A1 (en) * 2000-04-26 2001-11-01 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element and method for producing the same
EP1277241B1 (en) * 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Gan-based light-emitting-diode chip
US6570186B1 (en) 2000-05-10 2003-05-27 Toyoda Gosei Co., Ltd. Light emitting device using group III nitride compound semiconductor
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP4024994B2 (en) * 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device
US6946685B1 (en) 2000-08-31 2005-09-20 Lumileds Lighting U.S., Llc Light emitting semiconductor method and device
US6525335B1 (en) * 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
TW474034B (en) * 2000-11-07 2002-01-21 United Epitaxy Co Ltd LED and the manufacturing method thereof
TW579608B (en) * 2000-11-24 2004-03-11 High Link Technology Corp Method and structure of forming electrode for light emitting device
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
TW493286B (en) * 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
JP4054631B2 (en) * 2001-09-13 2008-02-27 シャープ株式会社 Semiconductor light emitting device and method for manufacturing the same, LED lamp, and LED display device
DE10147887C2 (en) * 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component with a contact, which comprises a plurality of spaced-apart contact points
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6635503B2 (en) 2002-01-28 2003-10-21 Cree, Inc. Cluster packaging of light emitting diodes
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
DE10244986B4 (en) * 2002-09-26 2008-02-07 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
US20040104395A1 (en) * 2002-11-28 2004-06-03 Shin-Etsu Handotai Co., Ltd. Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device
JP3979378B2 (en) * 2003-11-06 2007-09-19 住友電気工業株式会社 Semiconductor light emitting device
KR100586949B1 (en) * 2004-01-19 2006-06-07 삼성전기주식회사 Flip chip type nitride semiconductor light emitting diode
KR100581831B1 (en) * 2004-02-05 2006-05-23 엘지전자 주식회사 Light emitting diode
JP2007533133A (en) * 2004-04-07 2007-11-15 ティンギ テクノロジーズ プライベート リミテッド Fabrication of reflective layer on semiconductor light emitting diode
CN1860621A (en) * 2004-07-12 2006-11-08 罗姆股份有限公司 Semiconductor light emitting element
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
WO2006013507A1 (en) * 2004-07-26 2006-02-09 Koninklijke Philips Electronics N.V. Chip with light protection layer
JP2006066449A (en) * 2004-08-24 2006-03-09 Toshiba Corp Semiconductor light emitting device
JP4814503B2 (en) * 2004-09-14 2011-11-16 スタンレー電気株式会社 Semiconductor device, manufacturing method thereof, and electronic component unit
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
EP1821347B1 (en) 2006-02-16 2018-01-03 LG Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
KR100833489B1 (en) * 2006-02-21 2008-05-29 한국전자통신연구원 Transparent contact electrode for Si nanocrystal light-emitting diodes, and method of fabricating
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
TWI305960B (en) * 2006-06-16 2009-02-01 Opto Tech Corp Light emitting diode and method manufacturing the same
SG140473A1 (en) 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
JP4894411B2 (en) * 2006-08-23 2012-03-14 日立電線株式会社 Semiconductor light emitting device
JP5326204B2 (en) 2006-11-29 2013-10-30 富士通株式会社 LIGHT EMITTING COMPONENT, ITS MANUFACTURING METHOD, LIGHT EMITTING COMPONENT ASSEMBLY AND ELECTRONIC DEVICE
TW200837943A (en) * 2007-01-22 2008-09-16 Led Lighting Fixtures Inc Fault tolerant light emitters, systems incorporating fault tolerant light emitters and methods of fabricating fault tolerant light emitters
TWI440210B (en) 2007-01-22 2014-06-01 Cree Inc Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
DE102007003282B4 (en) * 2007-01-23 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED chip
JP5346443B2 (en) * 2007-04-16 2013-11-20 ローム株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4625827B2 (en) * 2007-06-04 2011-02-02 株式会社東芝 Semiconductor light emitting device and semiconductor light emitting device
EP2017898A1 (en) * 2007-07-17 2009-01-21 Vishay Israel Ltd. Semiconductor light-emitting device and method for the manufacture thereof
US8212273B2 (en) 2007-07-19 2012-07-03 Photonstar Led Limited Vertical LED with conductive vias
KR100843426B1 (en) * 2007-07-23 2008-07-03 삼성전기주식회사 Light emitting device
US20090173956A1 (en) * 2007-12-14 2009-07-09 Philips Lumileds Lighting Company, Llc Contact for a semiconductor light emitting device
US8692286B2 (en) 2007-12-14 2014-04-08 Philips Lumileds Lighing Company LLC Light emitting device with bonded interface
US7985979B2 (en) * 2007-12-19 2011-07-26 Koninklijke Philips Electronics, N.V. Semiconductor light emitting device with light extraction structures
DE102008006988A1 (en) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
US8278679B2 (en) * 2008-04-29 2012-10-02 Tsmc Solid State Lighting Ltd. LED device with embedded top electrode
DE102008035900A1 (en) * 2008-04-30 2009-11-05 Osram Opto Semiconductors Gmbh LED chip
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
JP5150367B2 (en) * 2008-05-27 2013-02-20 東芝ディスクリートテクノロジー株式会社 Light emitting device and manufacturing method thereof
DE102008051048A1 (en) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor body
JP2010278112A (en) * 2009-05-27 2010-12-09 Hitachi Cable Ltd Semiconductor light emitting element
US20100327300A1 (en) 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
CN101908594A (en) * 2010-06-23 2010-12-08 山东华光光电子有限公司 Manufacturing method of reversed polarity AlGaInP red LED chip current expansion
JP5479391B2 (en) 2011-03-08 2014-04-23 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
US8274091B1 (en) * 2011-07-07 2012-09-25 Yuan Ze University Light emitting device with light extraction layer and fabricating method thereof
US9818912B2 (en) 2011-12-12 2017-11-14 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
US9184346B2 (en) 2011-12-12 2015-11-10 Sensor Electronic Technology, Inc. Ultraviolet reflective contact
US9082935B2 (en) 2012-11-05 2015-07-14 Epistar Corporation Light-emitting element and the light-emitting array having the same
US10276749B2 (en) 2013-01-09 2019-04-30 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9768357B2 (en) 2013-01-09 2017-09-19 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
US9287449B2 (en) 2013-01-09 2016-03-15 Sensor Electronic Technology, Inc. Ultraviolet reflective rough adhesive contact
CN109244204B (en) * 2017-07-11 2021-08-03 英属开曼群岛商錼创科技股份有限公司 Micro light-emitting element and display device
US10916682B2 (en) 2017-07-11 2021-02-09 PlayNitride Inc. Micro light-emitting device and display apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775472A (en) * 1980-10-29 1982-05-12 Nec Corp Light emitting element
JPH0488684A (en) * 1990-08-01 1992-03-23 Koito Mfg Co Ltd Led chip electrode structure
JPH06310757A (en) * 1993-04-21 1994-11-04 Sharp Corp Pn junction led employing silicon carbide

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor
DE2328905A1 (en) * 1973-06-06 1974-12-12 Siemens Ag PROCESS FOR PRODUCING METAL CONTACTS ON GALLIUM PHOSPHIDE LUMINESCENT DIODES WITH LOW ABSORPTION LOSS
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
US3909929A (en) * 1973-12-26 1975-10-07 Gen Electric Method of making contacts to semiconductor light conversion elements
JPS5237783A (en) * 1975-09-20 1977-03-23 Oki Electric Ind Co Ltd Light emission diode
US4232440A (en) * 1979-02-27 1980-11-11 Bell Telephone Laboratories, Incorporated Contact structure for light emitting device
JPS5694789A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Manufacturing method of light semiconductor device
DE3041358A1 (en) * 1980-11-03 1982-06-09 Siemens AG, 1000 Berlin und 8000 München LIGHT REFLECTIVE OHMSCHER CONTACT FOR COMPONENTS
GB2101470A (en) * 1981-03-24 1983-01-19 Berkel Patent Nv Slicing machines
DE3310349A1 (en) * 1983-03-22 1984-09-27 Siemens AG, 1000 Berlin und 8000 München Method of producing highly reflective ohmic contact
DE3310362A1 (en) * 1983-03-22 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Method of altering the optical properties of the interface between semiconductor material and metal contact
JP2593960B2 (en) * 1990-11-29 1997-03-26 シャープ株式会社 Compound semiconductor light emitting device and method of manufacturing the same
JP2778349B2 (en) * 1992-04-10 1998-07-23 日亜化学工業株式会社 Gallium nitride based compound semiconductor electrodes
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5775472A (en) * 1980-10-29 1982-05-12 Nec Corp Light emitting element
JPH0488684A (en) * 1990-08-01 1992-03-23 Koito Mfg Co Ltd Led chip electrode structure
JPH06310757A (en) * 1993-04-21 1994-11-04 Sharp Corp Pn junction led employing silicon carbide

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEE Transactions on Electron Devices, Vol 19, No 10, Oct 92,pp1095-97, Kasami et al "GaP Displays" *
Patent Abstracts of Japan, Section E, Section No 1231, Vol 16, No 316, Pg 51, 10/7/92 & JP 04 088 684 A *
Patent Abstracts of Japan, Section E, Section No 155, Vol 6,No 155, Pg 1, 17/8/82 & JP 57 075 472 A *

Also Published As

Publication number Publication date
GB9624934D0 (en) 1997-01-15
DE19648309A1 (en) 1997-07-03
SG63673A1 (en) 1999-03-30
JPH09186365A (en) 1997-07-15
DE19648309B4 (en) 2007-10-18
US5917202A (en) 1999-06-29
GB2323208A (en) 1998-09-16

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Legal Events

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732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee