GB9412937D0 - Light emitting device - Google Patents

Light emitting device

Info

Publication number
GB9412937D0
GB9412937D0 GB9412937A GB9412937A GB9412937D0 GB 9412937 D0 GB9412937 D0 GB 9412937D0 GB 9412937 A GB9412937 A GB 9412937A GB 9412937 A GB9412937 A GB 9412937A GB 9412937 D0 GB9412937 D0 GB 9412937D0
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting device
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9412937A
Other versions
GB2280061A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Corp
Publication of GB9412937D0 publication Critical patent/GB9412937D0/en
Publication of GB2280061A publication Critical patent/GB2280061A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
GB9412937A 1993-06-30 1994-06-28 Light emitting device Withdrawn GB2280061A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16269793A JPH0722646A (en) 1993-06-30 1993-06-30 Led with current block layer

Publications (2)

Publication Number Publication Date
GB9412937D0 true GB9412937D0 (en) 1994-08-17
GB2280061A GB2280061A (en) 1995-01-18

Family

ID=15759586

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9412937A Withdrawn GB2280061A (en) 1993-06-30 1994-06-28 Light emitting device

Country Status (3)

Country Link
JP (1) JPH0722646A (en)
DE (1) DE4422660A1 (en)
GB (1) GB2280061A (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252520A (en) * 1999-03-03 2000-09-14 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
WO2005022654A2 (en) 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7795623B2 (en) * 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4625827B2 (en) * 2007-06-04 2011-02-02 株式会社東芝 Semiconductor light emitting device and semiconductor light emitting device
JP5324116B2 (en) * 2008-03-28 2013-10-23 京セラ株式会社 Light emitting device and manufacturing method thereof
JP5642976B2 (en) 2010-02-08 2014-12-17 サントリー食品インターナショナル株式会社 Coffee aroma-containing composition
KR101888349B1 (en) 2013-09-26 2018-08-16 주식회사 엘지화학 Gas-liquid device
KR20180075814A (en) 2016-12-27 2018-07-05 한화케미칼 주식회사 distillation
JP6745716B2 (en) 2016-12-27 2020-08-26 サントリーホールディングス株式会社 Peel skin extract and method for producing the same
JP6924069B2 (en) 2017-05-01 2021-08-25 サントリーホールディングス株式会社 Recovery of aroma components from citrus peel
KR102577190B1 (en) 2019-11-05 2023-09-11 한화솔루션 주식회사 distillation apparatus
KR102660991B1 (en) 2019-11-05 2024-04-25 한화솔루션 주식회사 distillation apparatus
KR102577183B1 (en) 2019-12-30 2023-09-11 한화솔루션 주식회사 Distillation apparatus and distillation method
KR20220032917A (en) 2020-09-08 2022-03-15 삼성전자주식회사 Micro light emitting device and display apparatus having the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2386907A1 (en) * 1977-04-06 1978-11-03 Radiotechnique Compelec Electroluminescent semiconductor for fibre-optics - has annular quasi isolating region controlling current density in active area of pn junction
NL8602653A (en) * 1986-10-23 1988-05-16 Philips Nv SEMICONDUCTOR LASER AND METHOD OF MANUFACTURE THEREOF.
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
US5181221A (en) * 1990-09-12 1993-01-19 Seiko Epson Corporation Surface emission type semiconductor laser
US5063569A (en) * 1990-12-19 1991-11-05 At&T Bell Laboratories Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces
WO1992017925A1 (en) * 1991-03-28 1992-10-15 Seiko Epson Corporation Surface emitting type semiconductor laser and its manufacturing method
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
US5212702A (en) * 1992-03-25 1993-05-18 At&T Bell Laboratories Semiconductor surface emitting laser having reduced threshold voltage and enhanced optical output

Also Published As

Publication number Publication date
JPH0722646A (en) 1995-01-24
DE4422660A1 (en) 1995-02-09
GB2280061A (en) 1995-01-18

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)