JPS5760884A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5760884A
JPS5760884A JP13626380A JP13626380A JPS5760884A JP S5760884 A JPS5760884 A JP S5760884A JP 13626380 A JP13626380 A JP 13626380A JP 13626380 A JP13626380 A JP 13626380A JP S5760884 A JPS5760884 A JP S5760884A
Authority
JP
Japan
Prior art keywords
film
thickness
lambda
protective film
ith
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13626380A
Other languages
Japanese (ja)
Other versions
JPS5854516B2 (en
Inventor
Hiroshi Ishikawa
Hajime Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13626380A priority Critical patent/JPS5854516B2/en
Publication of JPS5760884A publication Critical patent/JPS5760884A/en
Publication of JPS5854516B2 publication Critical patent/JPS5854516B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate the fabrication of a semiconductor laser with no influence on protective effect by selecting the thickness of a protective film on two reflection surfaces of the laser element a value 1/10 or less of the wavelength within the protective film. CONSTITUTION:A protective film 16 of Al2O3 is attached on the sides of a semiconductor laser element having electrodes 6 and 7, and the thickness of the film is set at one tenth or less of the emission wavelength within the film. When the thickness is lambda/2 or is integer times, the reflection factor is the maximum, and its threshold current Ith is almost equal to Ith0 which is for without a protective film. With the rest of thickness, Ith is larger than Ith0. When the film is lambda/10 thick, this is within the order of thickness error, and the distribution of Ith is not different from that for the optimum value lambda/2. When the film is less than lambda/10 thick, the formation time decreases, and the deformation of the reflection surface can be prevented. Therefore, the fraction defective of a luminous characteristic decreases, and also variation of a threshold current due to leaving it under a high temperature decreases.
JP13626380A 1980-09-30 1980-09-30 semiconductor laser Expired JPS5854516B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13626380A JPS5854516B2 (en) 1980-09-30 1980-09-30 semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13626380A JPS5854516B2 (en) 1980-09-30 1980-09-30 semiconductor laser

Publications (2)

Publication Number Publication Date
JPS5760884A true JPS5760884A (en) 1982-04-13
JPS5854516B2 JPS5854516B2 (en) 1983-12-05

Family

ID=15171092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13626380A Expired JPS5854516B2 (en) 1980-09-30 1980-09-30 semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5854516B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814590A (en) * 1981-07-17 1983-01-27 Matsushita Electric Ind Co Ltd Semiconductor laser
JP2013161884A (en) * 2012-02-02 2013-08-19 Stanley Electric Co Ltd Semiconductor light-emitting element and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064621U (en) * 1992-06-24 1994-01-21 株式会社チノー Electronic instrument

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814590A (en) * 1981-07-17 1983-01-27 Matsushita Electric Ind Co Ltd Semiconductor laser
JPH0223038B2 (en) * 1981-07-17 1990-05-22 Matsushita Electric Ind Co Ltd
JP2013161884A (en) * 2012-02-02 2013-08-19 Stanley Electric Co Ltd Semiconductor light-emitting element and method of manufacturing the same

Also Published As

Publication number Publication date
JPS5854516B2 (en) 1983-12-05

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