JPS5586180A - Semiconductor photo device - Google Patents

Semiconductor photo device

Info

Publication number
JPS5586180A
JPS5586180A JP16058078A JP16058078A JPS5586180A JP S5586180 A JPS5586180 A JP S5586180A JP 16058078 A JP16058078 A JP 16058078A JP 16058078 A JP16058078 A JP 16058078A JP S5586180 A JPS5586180 A JP S5586180A
Authority
JP
Japan
Prior art keywords
gold
electrode
crystal
layer
alloy electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16058078A
Other languages
Japanese (ja)
Other versions
JPS5635317B2 (en
Inventor
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16058078A priority Critical patent/JPS5586180A/en
Publication of JPS5586180A publication Critical patent/JPS5586180A/en
Publication of JPS5635317B2 publication Critical patent/JPS5635317B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To lengthen the lifetime of the device even if a crystal having a rearrangement is used by providing between a metal alloy electrode and a crystal, a metal layer which becomes a blocking layer against the diffusion of gold. CONSTITUTION:nInP2, InGaAsP3, pInP4 are grown in succession on nInP substrate 1 on a wafer. This is covered with SiO2. Subsequently, by photolithography, the insulating film is removed (8) in a stripe, whose width is 20mum or less, or in a dot, whose diameter is 100mum or less. The entire surface is covered with a layer of at least one of chromium, titanium and platinum-chromium layer 12, for example- of thickness 1000Angstrom or above, and gold-zinc alloy electrode 6 and gold-germanium-nickel alloy electrode 7 are formed. By this, the gold in electrode 6 is prevented from being diffused into the crystal when it is conducting because of electrode 12, and the occurrence of short-circuiting in the diode is prevented. As a result, a device of an extremely long life can be obtained.
JP16058078A 1978-12-23 1978-12-23 Semiconductor photo device Granted JPS5586180A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16058078A JPS5586180A (en) 1978-12-23 1978-12-23 Semiconductor photo device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16058078A JPS5586180A (en) 1978-12-23 1978-12-23 Semiconductor photo device

Publications (2)

Publication Number Publication Date
JPS5586180A true JPS5586180A (en) 1980-06-28
JPS5635317B2 JPS5635317B2 (en) 1981-08-15

Family

ID=15718028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16058078A Granted JPS5586180A (en) 1978-12-23 1978-12-23 Semiconductor photo device

Country Status (1)

Country Link
JP (1) JPS5586180A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999282B2 (en) 2008-10-27 2011-08-16 Lg Innotek Co., Ltd. Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7999282B2 (en) 2008-10-27 2011-08-16 Lg Innotek Co., Ltd. Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS5635317B2 (en) 1981-08-15

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