JPS57184277A - Manufacture of semiconductor light emission device - Google Patents

Manufacture of semiconductor light emission device

Info

Publication number
JPS57184277A
JPS57184277A JP6987281A JP6987281A JPS57184277A JP S57184277 A JPS57184277 A JP S57184277A JP 6987281 A JP6987281 A JP 6987281A JP 6987281 A JP6987281 A JP 6987281A JP S57184277 A JPS57184277 A JP S57184277A
Authority
JP
Japan
Prior art keywords
manufacture
etching
groove
light emission
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6987281A
Other languages
Japanese (ja)
Other versions
JPS6342872B2 (en
Inventor
Hiroshi Ishikawa
Hajime Imai
Nobuyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6987281A priority Critical patent/JPS57184277A/en
Publication of JPS57184277A publication Critical patent/JPS57184277A/en
Publication of JPS6342872B2 publication Critical patent/JPS6342872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To contrive the stabilization of transverse mode and reduction of threshold current, by appropriately selecting the groove direction and etching liquid on a semiconductor laser manufacturing substrate. CONSTITUTION:An InP substrate is applied for etching by etching liquid with the mixture of hydrochloric acid and nitric acid in the ratio of 1:1-2:3 with the surface (100) as a main surface and sides of the opening part of the groove in parallel in the direction of <011> in the manufacture of InGaAsP semiconductor laser of a burried type with double hetero structure in the groove of the semiconductor substrate. Figures (a) and (b) change (c) when unsufficient etching.
JP6987281A 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device Granted JPS57184277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Publications (2)

Publication Number Publication Date
JPS57184277A true JPS57184277A (en) 1982-11-12
JPS6342872B2 JPS6342872B2 (en) 1988-08-25

Family

ID=13415307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6987281A Granted JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS57184277A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018101675A (en) * 2016-12-20 2018-06-28 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light-emitting element and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018101675A (en) * 2016-12-20 2018-06-28 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light-emitting element and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6342872B2 (en) 1988-08-25

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