JPS5696888A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5696888A
JPS5696888A JP17119079A JP17119079A JPS5696888A JP S5696888 A JPS5696888 A JP S5696888A JP 17119079 A JP17119079 A JP 17119079A JP 17119079 A JP17119079 A JP 17119079A JP S5696888 A JPS5696888 A JP S5696888A
Authority
JP
Japan
Prior art keywords
layer
type
active layer
type inp
ingaasp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17119079A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Yorimitsu Nishitani
Satoshi Furumiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17119079A priority Critical patent/JPS5696888A/en
Publication of JPS5696888A publication Critical patent/JPS5696888A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain the stable lateral mode in the light emitting device wherein a light confining layer is embeded in a clad layer which holds an active layer in- between with a stripe region being remained, by controlling the diffusion of lateral carriers by the P-N junctions formed in an active layer. CONSTITUTION:On an N type InP substrate 1, are layered an N type InP clad 2, a nonadded InGaAsP active layer 3, a P type InP clad 4, an N type InGaAsP light confining layer 5. Then, by using an SiO2 mask, the layer 5 is etched 5A in a stripe shape with a blended liquid of H2O2-H2SO4-H2O. Thereafter, P type InP clad layer 6 and P type InGaAsP 7 are layered. As impurities, Te is used for the layers 2 and 4, Cd for the layer 5, and a large amount of Zn for the layers 6 and 7. Therefore, only the part 3A of the active layer is transformed into P type by Zn and the P-N junction is formed between the part 3B and said part 3A. An electrode 8 is made of Au-Zn and an electrode 9 is made of Au-Ge-Ni. In this constitution, even though the stripe width is narrow, the threshold current can be sufficiently decreased, the confinement of the light is excellent, and the lateral mode can be stabilized.
JP17119079A 1979-12-29 1979-12-29 Semiconductor light emitting device Pending JPS5696888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17119079A JPS5696888A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17119079A JPS5696888A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5696888A true JPS5696888A (en) 1981-08-05

Family

ID=15918668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17119079A Pending JPS5696888A (en) 1979-12-29 1979-12-29 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5696888A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603180A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS603180A (en) * 1983-06-21 1985-01-09 Toshiba Corp Semiconductor laser device

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