JPS61150284A - Photo semiconductor device - Google Patents
Photo semiconductor deviceInfo
- Publication number
- JPS61150284A JPS61150284A JP59272204A JP27220484A JPS61150284A JP S61150284 A JPS61150284 A JP S61150284A JP 59272204 A JP59272204 A JP 59272204A JP 27220484 A JP27220484 A JP 27220484A JP S61150284 A JPS61150284 A JP S61150284A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- reflector
- lead frame
- semiconductor device
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は凹状反射板をそなえ例えば青色から赤外領域に
ある光を発光する光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical semiconductor device that includes a concave reflecting plate and emits light in the blue to infrared range, for example.
従来発光半導体素子には、例えばGaPを用いたLED
(発光ダイオード)のように、発光面だけでなく素子
全体が発光するものが知られている。この種の発光半導
体素子を組み込んだ光半導体装置では、一般にその輝度
を高めるために反射板が用いられる。またその反射板に
は、銀めっき層を形成したものが用いられる。 ゛第3
図は従来め゛反射板をそなえたLEDラングの構”成因
、第4図はこの従来のLEDランクに具備された反射板
部の断面図、第5図は上記LEDランデの製造に用いら
れるリードフレームの形状を示す斜視図、第6図は第5
図のA−A線に沿う断面図で、1は皿状反射板、2.3
は鉄の芯材10をそなえたリード、4は″発光半導体素
子、5はポンディ″ングワイヤ、6はエポキシ樹脂、7
は銀めっき層、8はリードフレームの金属細条、9は橋
絡細条、1ノは銅めっき層であ”る。Conventional light-emitting semiconductor devices include, for example, LEDs using GaP.
(Light-emitting diodes) are known in which not only the light-emitting surface but also the entire device emits light. In an optical semiconductor device incorporating this type of light emitting semiconductor element, a reflector is generally used to increase its brightness. Further, the reflective plate used has a silver plating layer formed thereon.゛Third
The figure shows the structure of a conventional LED rung equipped with a reflector, Figure 4 is a cross-sectional view of the reflector part included in this conventional LED rung, and Figure 5 is a lead used in manufacturing the above LED rung. A perspective view showing the shape of the frame.
In the cross-sectional view taken along line A-A in the figure, 1 is a dish-shaped reflector, 2.3
1 is a lead having an iron core material 10, 4 is a "light emitting semiconductor element," 5 is a "ponding" wire, 6 is an epoxy resin, and 7 is a lead having an iron core material 10.
1 is a silver plating layer, 8 is a metal strip of the lead frame, 9 is a bridging strip, and 1 is a copper plating layer.
上記のよ弓に反射板1をそなえた従来の光半導体装置は
、少くとも反射板1の′反射面に一価な銀めっき層7を
施こして反射板効果を樽ていたため、コストが高くなる
という問題示あった。The conventional optical semiconductor device equipped with a reflector 1 on the above-mentioned bow has a high cost because a monovalent silver plating layer 7 is applied to at least the reflective surface of the reflector 1 to obtain the reflector effect. There was a problem with this.
またこのような光半導体の製造に通常用いられる反射板
をそなえたリードフレームとして、従来は全面に銀めっ
き層を形成したも□のを用いていたため、そのコストが
著しく高いという問題があった。ところでリードフレー
ムの反射板表面にだけ銀めっきを施こすようにすれば、
銀の使用量を節減することは可能であるが、貴金属の高
騰が激しい現在、これも問題の根本的解決にはならない
ものであった。In addition, lead frames equipped with reflectors that are commonly used in the manufacture of such optical semiconductors have conventionally been formed with a silver plating layer formed over the entire surface, which poses the problem of extremely high costs. By the way, if you apply silver plating only to the surface of the reflector of the lead frame,
It is possible to reduce the amount of silver used, but given the rapidly rising prices of precious metals, this would not fundamentally solve the problem.
本発明は上記実情に鑑みてなされたもので、高価な銀め
っき層を使用せず、しかも反射板の充分な反射効果を有
する光半導体装置を提供しようとするものである。The present invention has been made in view of the above circumstances, and aims to provide an optical semiconductor device that does not use an expensive silver plating layer and has a sufficient reflection effect of a reflector.
本発明は、例えば波長400 nm〜950 nmの青
色領域から赤外領域にある光を発光する発光半導体素子
が皿状反射板上にマウントされており、少くともこの反
射板の反射面がアルミニウムでできていることを特徴と
している。In the present invention, a light emitting semiconductor element that emits light in the blue region to infrared region with a wavelength of 400 nm to 950 nm, for example, is mounted on a dish-shaped reflector, and at least the reflective surface of this reflector is made of aluminum. It is characterized by the fact that it is made of
以下図面を参照して本発明の一実施例を説明する。第1
図は同実施例に用いるリードフレームの断面図である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a sectional view of a lead frame used in the same embodiment.
本実施例の構成の特徴は、第1図に示される如く発光半
導体素子をマウントする皿状反射板2ノをそなえたリー
ドフレーム22をアルミニウムで構成したことである。A feature of the structure of this embodiment is that, as shown in FIG. 1, a lead frame 22 provided with a dish-shaped reflector plate 2 on which a light emitting semiconductor element is mounted is made of aluminum.
このリードフレームはアルミニウムの芯材(リード22
)の表面に、皿状反射板21をよけて銅めっき層23が
形成されている。この銅めっき層23は、後工程の半田
付けのために設けられたものである。This lead frame has an aluminum core (lead 22
), a copper plating layer 23 is formed on the surface thereof, avoiding the dish-shaped reflecting plate 21. This copper plating layer 23 is provided for soldering in a later process.
第1図のものにあっては、高価な銀を全く使用する必要
がないから、コスト低減の効果が極めて大きい。しかも
アルミニウムの反射率は、第2図に示される如く波長4
00〜900 nmの領域において、銀についで反射率
が高いので、高い輝度を得ることができる。また波長2
00〜400 nmの範囲でも使用できるから、使用範
囲が広くなる。また銀めっき工程等が不要となるため、
製造工程が簡略化できるものである。In the case shown in FIG. 1, there is no need to use expensive silver at all, so the cost reduction effect is extremely large. Moreover, the reflectance of aluminum is as shown in Figure 2 at wavelength 4.
In the region of 00 to 900 nm, it has the second highest reflectance after silver, so high brightness can be obtained. Also wavelength 2
Since it can be used even in the range of 00 to 400 nm, the range of use is widened. Also, since silver plating process etc. are not required,
The manufacturing process can be simplified.
なお本発明は上記実施例のみに限られず、種種の応用が
可能である。例えば上記実施例では、リードフレームに
純アルミニウムの芯材を用いたが、例えばアルミニウム
合金を用いてもよいし、またリードフレームを例えば鉄
としてその皿状反射板の反射面にアルミニウムめっき等
を施こしたものを用いてもよい。Note that the present invention is not limited to the above embodiments, and can be applied in various ways. For example, in the above embodiment, a core material of pure aluminum was used for the lead frame, but an aluminum alloy may also be used, or the lead frame may be made of iron, and the reflective surface of the dish-shaped reflector plate may be plated with aluminum. You may also use strained ones.
以上説明した如く本発明によれば、少くとも反射板部に
アルミニウムを用いるようにしたため、コスト低減が可
能で、反射率が高く、製造が簡略化される光半導体装置
が提供できるものである。As explained above, according to the present invention, since aluminum is used for at least the reflection plate portion, it is possible to provide an optical semiconductor device that can reduce costs, has high reflectance, and is simple to manufacture.
第1図は本発明の一実施例の要部断面図、第2図は同実
施例の効果を示す特性図、第3図は従来の反射板をそな
えたLEDランノの構成図、第4図はこの従来のLED
ラングに具備された反射板部の断面図、第5図は上記I
JDラングの製造に用いるリードフレームの斜視図、第
6図は第5図のA−A線に沿う断面図である。
2ノ・・・皿状反射板、22・・・アルミニウム製リー
ド。
’8 g 8 cj2
嘱菩井Fig. 1 is a sectional view of a main part of an embodiment of the present invention, Fig. 2 is a characteristic diagram showing the effects of the embodiment, Fig. 3 is a configuration diagram of an LED lamp equipped with a conventional reflector, and Fig. 4 is this conventional LED
A sectional view of the reflector portion provided on the rung, FIG. 5 is the above-mentioned I.
FIG. 6 is a perspective view of a lead frame used for manufacturing a JD rung, and is a sectional view taken along line A--A in FIG. 5. No. 2: Dish-shaped reflector, No. 22: Aluminum lead. '8 g 8 cj2 Kaboui
Claims (1)
射面が純アルミニウムまたはアルミニウム合金またはア
ルミニウムめっきで構成されることを特徴とする光半導
体装置。1. An optical semiconductor device, wherein at least a reflective surface of a dish-shaped reflective plate on which a light emitting semiconductor element is mounted is made of pure aluminum, an aluminum alloy, or aluminum plating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59272204A JPS61150284A (en) | 1984-12-24 | 1984-12-24 | Photo semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59272204A JPS61150284A (en) | 1984-12-24 | 1984-12-24 | Photo semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61150284A true JPS61150284A (en) | 1986-07-08 |
Family
ID=17510551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59272204A Pending JPS61150284A (en) | 1984-12-24 | 1984-12-24 | Photo semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61150284A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465882A (en) * | 1987-09-04 | 1989-03-13 | Rohm Co Ltd | Light emitting equipment |
JP2004056075A (en) * | 2002-05-31 | 2004-02-19 | Stanley Electric Co Ltd | Light-emitting device and method of manufacturing the same |
JP2011049608A (en) * | 2010-12-07 | 2011-03-10 | Hitachi Chem Co Ltd | Substrate for mounting light emitting element and manufacturing method of the same |
US11011476B2 (en) | 2018-03-12 | 2021-05-18 | Stmicroelectronics International N.V. | Lead frame surface finishing |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
-
1984
- 1984-12-24 JP JP59272204A patent/JPS61150284A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6465882A (en) * | 1987-09-04 | 1989-03-13 | Rohm Co Ltd | Light emitting equipment |
JP2004056075A (en) * | 2002-05-31 | 2004-02-19 | Stanley Electric Co Ltd | Light-emitting device and method of manufacturing the same |
JP2011049608A (en) * | 2010-12-07 | 2011-03-10 | Hitachi Chem Co Ltd | Substrate for mounting light emitting element and manufacturing method of the same |
US11011476B2 (en) | 2018-03-12 | 2021-05-18 | Stmicroelectronics International N.V. | Lead frame surface finishing |
US11756899B2 (en) | 2018-03-12 | 2023-09-12 | Stmicroelectronics S.R.L. | Lead frame surface finishing |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI628815B (en) | Semiconductor device | |
US6562643B2 (en) | Packaging types of light-emitting diode | |
TW456058B (en) | Light emitting diode and the manufacturing method thereof | |
JP4592650B2 (en) | Side light emitting diode with improved sidewall reflection structure | |
JP4960099B2 (en) | Light emitting device and lighting apparatus or liquid crystal display device using the same | |
JP2009289918A (en) | Semiconductor light-emitting device | |
US7126163B2 (en) | Light-emitting diode and its manufacturing method | |
JPS61150284A (en) | Photo semiconductor device | |
JP4239564B2 (en) | Light emitting diode and LED light | |
JPS61148883A (en) | Lead frame for optical semiconductor device | |
JP3318698B2 (en) | Semiconductor light emitting device | |
JP2013149711A (en) | Semiconductor light-emitting device | |
JPH11214752A (en) | Semiconductor light-emitting device | |
JPH0488684A (en) | Led chip electrode structure | |
JPS55132083A (en) | Light emitting diode substrate | |
JPH09135040A (en) | Light-emitting diode | |
JP2006066504A (en) | Surface-mounting white led | |
JPS6098688A (en) | Photo semiconductor device | |
JP2005129970A (en) | Lead frame for semiconductor device | |
JPS58220480A (en) | Photosemiconductor device | |
JP2003303998A (en) | Light-emitting diode with enhanced visual uniformity | |
JPS59201475A (en) | Photosemiconductor device | |
JPS60136382A (en) | Optical semiconductor device | |
JPS6074485A (en) | Semiconductor light-emitting device | |
JPH05102531A (en) | Chip parts type light emitting diode |