JPS61150284A - Photo semiconductor device - Google Patents

Photo semiconductor device

Info

Publication number
JPS61150284A
JPS61150284A JP59272204A JP27220484A JPS61150284A JP S61150284 A JPS61150284 A JP S61150284A JP 59272204 A JP59272204 A JP 59272204A JP 27220484 A JP27220484 A JP 27220484A JP S61150284 A JPS61150284 A JP S61150284A
Authority
JP
Japan
Prior art keywords
aluminum
reflector
lead frame
semiconductor device
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59272204A
Other languages
Japanese (ja)
Inventor
Yoshio Arima
有馬 良雄
Yuji Ueda
上田 雄二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59272204A priority Critical patent/JPS61150284A/en
Publication of JPS61150284A publication Critical patent/JPS61150284A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Abstract

PURPOSE:To enable sufficient effect of reflection without the use of expensive Ag-soldered layers by a method wherein the reflection surface of a tray reflector on which a light emitting semiconductor element is mounted is made of pure aluminum, aluminum alloy, or aluminum plating. CONSTITUTION:A lead frame 22 provided with the tray reflector 21 on which a light emitting semiconductor element is mounted is made of aluminum. The lead frame has a Cu-plated layer 23 formed over the surface of an aluminum core by excluding the reflector 21. Since no use of expensive Ag is necessary, the effect of cost reduction is very large. Besides, the process of Ag plating and the like are unnecessitated; therefore, the manufacturing process can be simplified. Aluminum alloy can be used for the lead frame instead of a pure aluminum core material; otherwise, the material having iron in the lead frame and plated with aluminum or the like in the reflection surface of said reflector can be used.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は凹状反射板をそなえ例えば青色から赤外領域に
ある光を発光する光半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical semiconductor device that includes a concave reflecting plate and emits light in the blue to infrared range, for example.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来発光半導体素子には、例えばGaPを用いたLED
 (発光ダイオード)のように、発光面だけでなく素子
全体が発光するものが知られている。この種の発光半導
体素子を組み込んだ光半導体装置では、一般にその輝度
を高めるために反射板が用いられる。またその反射板に
は、銀めっき層を形成したものが用いられる。 ゛第3
図は従来め゛反射板をそなえたLEDラングの構”成因
、第4図はこの従来のLEDランクに具備された反射板
部の断面図、第5図は上記LEDランデの製造に用いら
れるリードフレームの形状を示す斜視図、第6図は第5
図のA−A線に沿う断面図で、1は皿状反射板、2.3
は鉄の芯材10をそなえたリード、4は″発光半導体素
子、5はポンディ″ングワイヤ、6はエポキシ樹脂、7
は銀めっき層、8はリードフレームの金属細条、9は橋
絡細条、1ノは銅めっき層であ”る。
Conventional light-emitting semiconductor devices include, for example, LEDs using GaP.
(Light-emitting diodes) are known in which not only the light-emitting surface but also the entire device emits light. In an optical semiconductor device incorporating this type of light emitting semiconductor element, a reflector is generally used to increase its brightness. Further, the reflective plate used has a silver plating layer formed thereon.゛Third
The figure shows the structure of a conventional LED rung equipped with a reflector, Figure 4 is a cross-sectional view of the reflector part included in this conventional LED rung, and Figure 5 is a lead used in manufacturing the above LED rung. A perspective view showing the shape of the frame.
In the cross-sectional view taken along line A-A in the figure, 1 is a dish-shaped reflector, 2.3
1 is a lead having an iron core material 10, 4 is a "light emitting semiconductor element," 5 is a "ponding" wire, 6 is an epoxy resin, and 7 is a lead having an iron core material 10.
1 is a silver plating layer, 8 is a metal strip of the lead frame, 9 is a bridging strip, and 1 is a copper plating layer.

上記のよ弓に反射板1をそなえた従来の光半導体装置は
、少くとも反射板1の′反射面に一価な銀めっき層7を
施こして反射板効果を樽ていたため、コストが高くなる
という問題示あった。
The conventional optical semiconductor device equipped with a reflector 1 on the above-mentioned bow has a high cost because a monovalent silver plating layer 7 is applied to at least the reflective surface of the reflector 1 to obtain the reflector effect. There was a problem with this.

またこのような光半導体の製造に通常用いられる反射板
をそなえたリードフレームとして、従来は全面に銀めっ
き層を形成したも□のを用いていたため、そのコストが
著しく高いという問題があった。ところでリードフレー
ムの反射板表面にだけ銀めっきを施こすようにすれば、
銀の使用量を節減することは可能であるが、貴金属の高
騰が激しい現在、これも問題の根本的解決にはならない
ものであった。
In addition, lead frames equipped with reflectors that are commonly used in the manufacture of such optical semiconductors have conventionally been formed with a silver plating layer formed over the entire surface, which poses the problem of extremely high costs. By the way, if you apply silver plating only to the surface of the reflector of the lead frame,
It is possible to reduce the amount of silver used, but given the rapidly rising prices of precious metals, this would not fundamentally solve the problem.

〔発明の目的〕[Purpose of the invention]

本発明は上記実情に鑑みてなされたもので、高価な銀め
っき層を使用せず、しかも反射板の充分な反射効果を有
する光半導体装置を提供しようとするものである。
The present invention has been made in view of the above circumstances, and aims to provide an optical semiconductor device that does not use an expensive silver plating layer and has a sufficient reflection effect of a reflector.

〔発明の概要〕[Summary of the invention]

本発明は、例えば波長400 nm〜950 nmの青
色領域から赤外領域にある光を発光する発光半導体素子
が皿状反射板上にマウントされており、少くともこの反
射板の反射面がアルミニウムでできていることを特徴と
している。
In the present invention, a light emitting semiconductor element that emits light in the blue region to infrared region with a wavelength of 400 nm to 950 nm, for example, is mounted on a dish-shaped reflector, and at least the reflective surface of this reflector is made of aluminum. It is characterized by the fact that it is made of

〔発明の実施例〕[Embodiments of the invention]

以下図面を参照して本発明の一実施例を説明する。第1
図は同実施例に用いるリードフレームの断面図である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a sectional view of a lead frame used in the same embodiment.

本実施例の構成の特徴は、第1図に示される如く発光半
導体素子をマウントする皿状反射板2ノをそなえたリー
ドフレーム22をアルミニウムで構成したことである。
A feature of the structure of this embodiment is that, as shown in FIG. 1, a lead frame 22 provided with a dish-shaped reflector plate 2 on which a light emitting semiconductor element is mounted is made of aluminum.

このリードフレームはアルミニウムの芯材(リード22
)の表面に、皿状反射板21をよけて銅めっき層23が
形成されている。この銅めっき層23は、後工程の半田
付けのために設けられたものである。
This lead frame has an aluminum core (lead 22
), a copper plating layer 23 is formed on the surface thereof, avoiding the dish-shaped reflecting plate 21. This copper plating layer 23 is provided for soldering in a later process.

第1図のものにあっては、高価な銀を全く使用する必要
がないから、コスト低減の効果が極めて大きい。しかも
アルミニウムの反射率は、第2図に示される如く波長4
00〜900 nmの領域において、銀についで反射率
が高いので、高い輝度を得ることができる。また波長2
00〜400 nmの範囲でも使用できるから、使用範
囲が広くなる。また銀めっき工程等が不要となるため、
製造工程が簡略化できるものである。
In the case shown in FIG. 1, there is no need to use expensive silver at all, so the cost reduction effect is extremely large. Moreover, the reflectance of aluminum is as shown in Figure 2 at wavelength 4.
In the region of 00 to 900 nm, it has the second highest reflectance after silver, so high brightness can be obtained. Also wavelength 2
Since it can be used even in the range of 00 to 400 nm, the range of use is widened. Also, since silver plating process etc. are not required,
The manufacturing process can be simplified.

なお本発明は上記実施例のみに限られず、種種の応用が
可能である。例えば上記実施例では、リードフレームに
純アルミニウムの芯材を用いたが、例えばアルミニウム
合金を用いてもよいし、またリードフレームを例えば鉄
としてその皿状反射板の反射面にアルミニウムめっき等
を施こしたものを用いてもよい。
Note that the present invention is not limited to the above embodiments, and can be applied in various ways. For example, in the above embodiment, a core material of pure aluminum was used for the lead frame, but an aluminum alloy may also be used, or the lead frame may be made of iron, and the reflective surface of the dish-shaped reflector plate may be plated with aluminum. You may also use strained ones.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く本発明によれば、少くとも反射板部に
アルミニウムを用いるようにしたため、コスト低減が可
能で、反射率が高く、製造が簡略化される光半導体装置
が提供できるものである。
As explained above, according to the present invention, since aluminum is used for at least the reflection plate portion, it is possible to provide an optical semiconductor device that can reduce costs, has high reflectance, and is simple to manufacture.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の要部断面図、第2図は同実
施例の効果を示す特性図、第3図は従来の反射板をそな
えたLEDランノの構成図、第4図はこの従来のLED
ラングに具備された反射板部の断面図、第5図は上記I
JDラングの製造に用いるリードフレームの斜視図、第
6図は第5図のA−A線に沿う断面図である。 2ノ・・・皿状反射板、22・・・アルミニウム製リー
ド。 ’8  g  8  cj2 嘱菩井
Fig. 1 is a sectional view of a main part of an embodiment of the present invention, Fig. 2 is a characteristic diagram showing the effects of the embodiment, Fig. 3 is a configuration diagram of an LED lamp equipped with a conventional reflector, and Fig. 4 is this conventional LED
A sectional view of the reflector portion provided on the rung, FIG. 5 is the above-mentioned I.
FIG. 6 is a perspective view of a lead frame used for manufacturing a JD rung, and is a sectional view taken along line A--A in FIG. 5. No. 2: Dish-shaped reflector, No. 22: Aluminum lead. '8 g 8 cj2 Kaboui

Claims (1)

【特許請求の範囲】[Claims] 発光半導体素子をマウントする皿状反射板の少くとも反
射面が純アルミニウムまたはアルミニウム合金またはア
ルミニウムめっきで構成されることを特徴とする光半導
体装置。
1. An optical semiconductor device, wherein at least a reflective surface of a dish-shaped reflective plate on which a light emitting semiconductor element is mounted is made of pure aluminum, an aluminum alloy, or aluminum plating.
JP59272204A 1984-12-24 1984-12-24 Photo semiconductor device Pending JPS61150284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59272204A JPS61150284A (en) 1984-12-24 1984-12-24 Photo semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59272204A JPS61150284A (en) 1984-12-24 1984-12-24 Photo semiconductor device

Publications (1)

Publication Number Publication Date
JPS61150284A true JPS61150284A (en) 1986-07-08

Family

ID=17510551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59272204A Pending JPS61150284A (en) 1984-12-24 1984-12-24 Photo semiconductor device

Country Status (1)

Country Link
JP (1) JPS61150284A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465882A (en) * 1987-09-04 1989-03-13 Rohm Co Ltd Light emitting equipment
JP2004056075A (en) * 2002-05-31 2004-02-19 Stanley Electric Co Ltd Light-emitting device and method of manufacturing the same
JP2011049608A (en) * 2010-12-07 2011-03-10 Hitachi Chem Co Ltd Substrate for mounting light emitting element and manufacturing method of the same
US11011476B2 (en) 2018-03-12 2021-05-18 Stmicroelectronics International N.V. Lead frame surface finishing
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6465882A (en) * 1987-09-04 1989-03-13 Rohm Co Ltd Light emitting equipment
JP2004056075A (en) * 2002-05-31 2004-02-19 Stanley Electric Co Ltd Light-emitting device and method of manufacturing the same
JP2011049608A (en) * 2010-12-07 2011-03-10 Hitachi Chem Co Ltd Substrate for mounting light emitting element and manufacturing method of the same
US11011476B2 (en) 2018-03-12 2021-05-18 Stmicroelectronics International N.V. Lead frame surface finishing
US11756899B2 (en) 2018-03-12 2023-09-12 Stmicroelectronics S.R.L. Lead frame surface finishing
US11735512B2 (en) 2018-12-31 2023-08-22 Stmicroelectronics International N.V. Leadframe with a metal oxide coating and method of forming the same

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