JPS55132083A - Light emitting diode substrate - Google Patents

Light emitting diode substrate

Info

Publication number
JPS55132083A
JPS55132083A JP3896779A JP3896779A JPS55132083A JP S55132083 A JPS55132083 A JP S55132083A JP 3896779 A JP3896779 A JP 3896779A JP 3896779 A JP3896779 A JP 3896779A JP S55132083 A JPS55132083 A JP S55132083A
Authority
JP
Japan
Prior art keywords
layer
constitution
led
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3896779A
Other languages
Japanese (ja)
Other versions
JPS6133274B2 (en
Inventor
Masaaki Umezaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP3896779A priority Critical patent/JPS55132083A/en
Publication of JPS55132083A publication Critical patent/JPS55132083A/en
Publication of JPS6133274B2 publication Critical patent/JPS6133274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To decrease light absorption factor of a substrate and also to improve radiation by a method wherein an almite layer on an Al base is subjected to mirror finish, and LED is provided on a printed circuit formed through a transparent insulating film. CONSTITUTION:An Al base 2 is oxidized to form almite layers 3, 4. The surface of the layer 4 is subjected to mirror finish, a transparent insulating layer 5 in epoxy resin is provided, and a printed circuit layer 6 in copper foil is placed thereon. LED 7 is mounted and connected 8 on the circuit layer 6, and a reflecting frame 9 in resin is mounted thereon. According to this constitution, radiation and reflectivity are given in good condition, and a high luminance can be displayed. The constitution is therefore effective particularly for using a green LED and for pulse driving.
JP3896779A 1979-03-30 1979-03-30 Light emitting diode substrate Granted JPS55132083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3896779A JPS55132083A (en) 1979-03-30 1979-03-30 Light emitting diode substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3896779A JPS55132083A (en) 1979-03-30 1979-03-30 Light emitting diode substrate

Publications (2)

Publication Number Publication Date
JPS55132083A true JPS55132083A (en) 1980-10-14
JPS6133274B2 JPS6133274B2 (en) 1986-08-01

Family

ID=12539922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3896779A Granted JPS55132083A (en) 1979-03-30 1979-03-30 Light emitting diode substrate

Country Status (1)

Country Link
JP (1) JPS55132083A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994381U (en) * 1982-12-17 1984-06-27 株式会社東芝 light emitting display device
JPS61116701A (en) * 1984-11-12 1986-06-04 株式会社小糸製作所 Lamp apparatus for vehicle
JPS63101987U (en) * 1986-12-22 1988-07-02
EP1087447A1 (en) * 1999-03-18 2001-03-28 Rohm Co., Ltd. Light-emitting semiconductor chip
JP2007129053A (en) * 2005-11-02 2007-05-24 Citizen Electronics Co Ltd Led luminescent device
KR101237685B1 (en) * 2011-03-29 2013-02-26 삼성전기주식회사 Heat radiating substrate and method of manufacturing the same
WO2014083714A1 (en) 2012-11-27 2014-06-05 シチズン電子株式会社 Mounting substrate and light emitting apparatus using mounting substrate
US10084122B2 (en) 2014-07-17 2018-09-25 Citizen Electronics Co., Ltd. Light-emitting apparatus and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61105967U (en) * 1984-12-13 1986-07-05

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994381U (en) * 1982-12-17 1984-06-27 株式会社東芝 light emitting display device
JPS61116701A (en) * 1984-11-12 1986-06-04 株式会社小糸製作所 Lamp apparatus for vehicle
JPH0424801B2 (en) * 1984-11-12 1992-04-28 Koito Mfg Co Ltd
JPS63101987U (en) * 1986-12-22 1988-07-02
JPH046056Y2 (en) * 1986-12-22 1992-02-19
EP1087447A4 (en) * 1999-03-18 2007-03-07 Rohm Co Ltd Light-emitting semiconductor chip
EP1087447A1 (en) * 1999-03-18 2001-03-28 Rohm Co., Ltd. Light-emitting semiconductor chip
JP2007129053A (en) * 2005-11-02 2007-05-24 Citizen Electronics Co Ltd Led luminescent device
KR101237685B1 (en) * 2011-03-29 2013-02-26 삼성전기주식회사 Heat radiating substrate and method of manufacturing the same
WO2014083714A1 (en) 2012-11-27 2014-06-05 シチズン電子株式会社 Mounting substrate and light emitting apparatus using mounting substrate
US9368707B2 (en) 2012-11-27 2016-06-14 Citizen Electronics Co., Ltd. Mounting substrate and light-emitting device using the same
JPWO2014083714A1 (en) * 2012-11-27 2017-01-05 シチズン電子株式会社 Mounting substrate and light emitting device using the mounting substrate
US10084122B2 (en) 2014-07-17 2018-09-25 Citizen Electronics Co., Ltd. Light-emitting apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6133274B2 (en) 1986-08-01

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