JPS6133274B2 - - Google Patents
Info
- Publication number
- JPS6133274B2 JPS6133274B2 JP3896779A JP3896779A JPS6133274B2 JP S6133274 B2 JPS6133274 B2 JP S6133274B2 JP 3896779 A JP3896779 A JP 3896779A JP 3896779 A JP3896779 A JP 3896779A JP S6133274 B2 JPS6133274 B2 JP S6133274B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitting diode
- light emitting
- transparent insulating
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011889 copper foil Substances 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 230000031700 light absorption Effects 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
本発明は発光ダイオード基板に係り、特に高揮
度な表示の行なえる発光ダイオード基板に関する
ものである。
従来第１図に示すような発光ダイオード１７を
用いた表示器において、輝度が不足であるため螢
光表示管等の表示器に普及が阻まれてきたが、こ
の輝度不足には３つの理由があり、その１つは素
子そのものの発光効率が十分でないことである。
２つめは発光ダイオード１７の光が表示器構成部
品に吸収されたり、部品と部品の間に洩れたりし
て表示に寄与しない光が出来ることで、特に基板
１１に吸収される量が多い。これは紙エポキシ等
の基板１１上の電極パターン１６，１６の大きさ
を第２図ａの如く発光ダイオード１７の取付に必
要な最小限の面積にした場合と、同図ｂの如く、
反射枠１９の底面開口部２０よりも大きな面積の
電極パターンを用いた場合とで、表示面の明度が
50乃至100％も異なる事から容易に考察される。
３つめの理由として放熱が不充分である時には素
子の発光効率が低下し、寿命も短かくなり、光の
波長も長波長側に移ることである。これは電極パ
ターン１６，１６を大きくすることである程度は
解消出来るが、小さな表示器や多くの絵素（セグ
メント等）を有する表示器の場合には電極パター
ンが大きくとれないし、パルス駆動の時には消費
電力の実効値を一定にするため高い電流通を有す
るパルスを与えるが、このような場合にも十分な
放熱がなされない。
本発明は上記３つの欠点のうち後者２つを改善
し、基板の光吸収率を低下させ、かつ、放熱をよ
くするもので、以下本案を詳細に説明する。
第３図は本案実施例の要部断面図で、１は本考
案における発光ダイオード基板であり、次のよう
な構造となつている。基台２として厚さ1.0乃至
2.0mmのアルミニウム（Al）を用い、酸化処理に
より表面に厚さ10乃至30μｍのアルマイト層３，
４を設ける。このアルマイト層４の表面を鏡面処
理したのち、エポキシ樹脂等で厚さ20乃至100μ
ｍの透明絶縁層５を設け、その上にプリント配線
の層６を銅箔によつて設ける。７はこのような発
光ダイオード基板１のプリント配線の層６の上に
取付けられたGaP等の発光ダイオードで、８は配
線用の細線、９は樹脂成型品等の反射枠である。
本発明は発光ダイオード基板１を上述のような
構造にしたので、発光ダイオード７の点灯によつ
て生じた熱は、プリント配線の層６、透明絶縁層
５を介してアルミニウムの基台２及びアルマイト
層３，４に伝わり、広い面積で外気と接触して放
熱される。この時の熱抵坑は、透明絶縁層５が薄
く、他の層は良熱伝導体なので小さい。又、アル
ミニウムの基台２はアルマイト層３，４で覆われ
ているので、外部からの各種刺激や透明絶縁層５
に侵されることもない。さらに発光ダイオード７
から放出された光は、プリント配線の層６、鏡面
処理されたアルマイト層４および反射枠９によつ
て有効に表示面（図の上方）へ導かれる。この効
果を充分に出すためには透明絶縁層５の光透過率
をよくする必要があるので、絶縁被膜として従来
よく利用されたポリカーボネート等の有色（茶褐
色）のものをそのまま用いるのは好ましくない。
第１表は従来と本発明実施例の表示器の明るさの
例を示すものである。
The present invention relates to a light emitting diode substrate, and more particularly to a light emitting diode substrate that can perform high-volatility display. Conventionally, displays using light emitting diodes 17 as shown in Fig. 1 have insufficient brightness, which has prevented the spread of displays such as fluorescent display tubes.There are three reasons for this lack of brightness. One of the problems is that the luminous efficiency of the element itself is not sufficient.
The second problem is that the light from the light emitting diode 17 is absorbed by the display component parts or leaks between parts, producing light that does not contribute to the display. In particular, a large amount of light is absorbed by the substrate 11. This is the case where the size of the electrode patterns 16, 16 on the substrate 11 made of paper epoxy or the like is set to the minimum area necessary for mounting the light emitting diode 17 as shown in FIG.
The brightness of the display surface is reduced by using an electrode pattern with an area larger than the bottom opening 20 of the reflective frame 19.
This can be easily considered since the difference is 50 to 100%.
The third reason is that when heat dissipation is insufficient, the light emitting efficiency of the element decreases, the life span becomes short, and the wavelength of light shifts to the longer wavelength side. This can be solved to some extent by making the electrode patterns 16, 16 larger, but in the case of a small display or a display with many picture elements (segments, etc.), the electrode pattern cannot be made large, and when pulse drive is used, the consumption In order to keep the effective value of power constant, a pulse with high current flow is applied, but even in such a case, sufficient heat dissipation is not achieved. The present invention improves the latter two of the above three drawbacks, reduces the light absorption rate of the substrate, and improves heat dissipation.The present invention will be described in detail below. FIG. 3 is a sectional view of a main part of the embodiment of the present invention, and 1 is a light emitting diode substrate according to the present invention, which has the following structure. Thickness 1.0 to 1.0 as base 2
Using 2.0 mm aluminum (Al), an alumite layer 3 with a thickness of 10 to 30 μm is formed on the surface by oxidation treatment.
4 will be provided. After mirror-finishing the surface of this alumite layer 4, it is coated with epoxy resin to a thickness of 20 to 100 μm.
A transparent insulating layer 5 of m is provided, and a printed wiring layer 6 is provided thereon using copper foil. 7 is a light emitting diode such as GaP mounted on the printed wiring layer 6 of the light emitting diode substrate 1, 8 is a thin wire for wiring, and 9 is a reflective frame such as a resin molded product. In the present invention, the light emitting diode substrate 1 has the above-described structure, so that the heat generated by lighting the light emitting diode 7 is transferred to the aluminum base 2 and the alumite through the printed wiring layer 6 and the transparent insulating layer 5. The heat is transmitted to layers 3 and 4, and is radiated by contacting the outside air over a wide area. The thermal resistance at this time is small because the transparent insulating layer 5 is thin and the other layers are good thermal conductors. In addition, since the aluminum base 2 is covered with alumite layers 3 and 4, it is protected against various external stimuli and the transparent insulating layer 5.
It will not be invaded by. Furthermore, light emitting diode 7
The light emitted from the display is effectively guided to the display surface (upper part of the figure) by the printed wiring layer 6, the mirror-treated alumite layer 4, and the reflective frame 9. In order to fully achieve this effect, it is necessary to improve the light transmittance of the transparent insulating layer 5, so it is not preferable to use colored (brown) materials such as polycarbonate, which have been commonly used as the insulating film, as they are.
Table 1 shows examples of the brightness of the conventional display and the display according to the embodiment of the present invention.
【表】【table】
【表】
上述したように本発明は、アルミニウム基台の
表面に鏡面仕上げされたアルマイト層を設け、そ
の上にプリント配線の層を設けることによつて得
られたアルミニウム基板（上述の実施例でいう発
光ダイオード基板）のプリント配線の層の上に発
光ダイオードを取着固定したものであるから、放
熱と光反射性に優れており、高輝度な表示が可能
であるから、特に輝度不足が問題となつている緑
色発光ダイオードを用いた時やパルス駆動の時な
どに極めて有効である。[Table] As described above, the present invention provides an aluminum substrate (in the above embodiment) obtained by providing a mirror-finished alumite layer on the surface of an aluminum base and providing a printed wiring layer thereon. Since the light-emitting diode is mounted and fixed on the printed wiring layer of the light-emitting diode board (light-emitting diode board), it has excellent heat dissipation and light reflection properties, and high-brightness display is possible, so lack of brightness is a particular problem. This is extremely effective when using a green light-emitting diode with a 100-degree color scheme or when driving in pulse mode.
第１図は発光ダイオード表示器の斜視図、第２
図は電極パターン図、第３図は本発明の実施例の
要部断面図である。
１……発光ダイオード基板（アルミニウム基
板）２……基台、３，４……アルマイト層、５…
…透明絶縁層、６，６……プリント配線の層、７
……発光ダイオード。
Figure 1 is a perspective view of a light emitting diode display;
The figure is an electrode pattern diagram, and FIG. 3 is a sectional view of a main part of an embodiment of the present invention. 1... Light emitting diode substrate (aluminum substrate) 2... Base, 3, 4... Alumite layer, 5...
...Transparent insulating layer, 6, 6...Printed wiring layer, 7
...Light emitting diode.
Claims (1)
アルマイト層を設け、その上に透明絶縁薄層を設
け、さらにその上にプリント配線の層を設けるこ
とによつて得られたアルミニウム基板のプリント
配線の層の上に発光ダイオードを取着した事を特
徴とする発光ダイオード基板。1. A printed wiring layer on an aluminum substrate obtained by providing a mirror-finished alumite layer on the surface of an aluminum base, providing a transparent insulating thin layer on top of that, and further providing a printed wiring layer on top of that. A light emitting diode substrate characterized in that a light emitting diode is mounted on the board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3896779A JPS55132083A (en) | 1979-03-30 | 1979-03-30 | Light emitting diode substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3896779A JPS55132083A (en) | 1979-03-30 | 1979-03-30 | Light emitting diode substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55132083A JPS55132083A (en) | 1980-10-14 |
| JPS6133274B2 true JPS6133274B2 (en) | 1986-08-01 |
Family
ID=12539922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3896779A Granted JPS55132083A (en) | 1979-03-30 | 1979-03-30 | Light emitting diode substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55132083A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105967U (en) * | 1984-12-13 | 1986-07-05 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5994381U (en) * | 1982-12-17 | 1984-06-27 | 株式会社東芝 | light emitting display device |
| JPS61116701A (en) * | 1984-11-12 | 1986-06-04 | 株式会社小糸製作所 | Lamp apparatus for vehicle |
| JPH046056Y2 (en) * | 1986-12-22 | 1992-02-19 | ||
| JP2000269551A (en) * | 1999-03-18 | 2000-09-29 | Rohm Co Ltd | Chip-type light emitting device |
| JP5066333B2 (en) * | 2005-11-02 | 2012-11-07 | シチズン電子株式会社 | LED light emitting device. |
| KR101237685B1 (en) * | 2011-03-29 | 2013-02-26 | 삼성전기주식회사 | Heat radiating substrate and method of manufacturing the same |
| WO2014083714A1 (en) | 2012-11-27 | 2014-06-05 | シチズン電子株式会社 | Mounting substrate and light emitting apparatus using mounting substrate |
| JP6381327B2 (en) | 2014-07-17 | 2018-08-29 | シチズン電子株式会社 | LED light emitting device and manufacturing method thereof |
-
1979
- 1979-03-30 JP JP3896779A patent/JPS55132083A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105967U (en) * | 1984-12-13 | 1986-07-05 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55132083A (en) | 1980-10-14 |
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