JP2008251663A - Light-emitting device and illumination apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems that light from a light-emitting element to a board leaks from the board and ends up in light loss that is not used effectively, that a manufacturing process for a reflective structure is complicated, and that heat from the light-emitting element is not dissipated enough resulting in a conspicuous disadvantage of inferior heat dissipation. <P>SOLUTION: A light-emitting device includes a board, a light-emitting element disposed on the board, a sealing resin which covers the light-emitting element and contains an emitter that is excited by the light-emitting element, and a first reflective layer which is formed on the surface of the board that is opposite to the surface on which the light-emitting element is disposed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a light emitting device using a light emitting diode chip and an illumination device using the light emitting device.

  In recent years, LEDs (light-emitting diodes) have been frequently used as light sources for lighting devices. As a method for obtaining white light of an illumination device using LEDs, a method using three types of LEDs, a red LED, a blue LED, and a green LED, and a phosphor that emits yellow light by converting excitation light emitted from the blue LED is used. There are methods.

  As a light source for illumination, white light with sufficient luminance is required, and lighting devices using a plurality of LED chips have been commercialized.

  FIG. 20 shows a conventional example in which light from the lower surface of the LED chip is effectively used (see Patent Document 1). A reflection frame made up of a spherical surface portion 200a and a conical portion 200b extending on the bottom surface is formed at a substantially central portion of the circuit board 500, and is formed on the inner surface of the reflection frame by vapor deposition of silver or aluminum as a reflection means. A metal reflective film 600 is formed. A transparent resin 400 is injected into the spherical portion 200 a, the LED chip 200 is mounted on the upper surface of the transparent resin 400, and sealed with a translucent resin 420 so as to cover the LED chip 200. The light from the lower surface of the LED chip is reflected / condensed by the spherical surface portion 200a and emitted toward the upper surface of the LED chip. Further, by changing the shape of the spherical portion, light distribution characteristics suitable for the set can be obtained.

Another conventional example is shown in FIG. 21 (see Patent Document 2). An object of the present invention is to provide a surface-mount type LED component excellent in productivity that can efficiently dissipate heat generated by an LED chip, and a manufacturing method thereof. This conventional example has a structure in which a heat sink 100 made of metal or ceramic on which an LED chip 200 is mounted is joined, and the wiring board 500 having the LED chip and the wiring pattern 300 is electrically connected by a wire W, and a transparent resin 400 Thus, the LED chip and the wire are embedded.
Japanese Patent Laid-Open No. 2005-056941 JP 2006-287020 A

  The conventional example shown in FIG. 20 is an LED chip package in which light from an LED chip is reflected by a spherical metal reflection film. This spherical reflecting structure has a problem that the manufacturing process is complicated. Further, for example, a light-emitting device used for an illumination device needs to have a sufficient luminance and uniform light emission that is not bright spot-like light emission, and thus a plurality of light-emitting elements must be provided over a substrate. In that case, the reflection structure as shown in the conventional example cannot be applied, and a new reflection structure is required. Furthermore, in the conventional example, since the LED chip is provided on the transparent resin, the heat from the LED chip is not sufficiently dissipated, and in the case where the LED chip is mounted, the heat dissipation is remarkable. .

  21 has a configuration in which the LED chip 200 and the wiring substrate 500 having the wiring pattern 300 are electrically connected by the wire W, and the LED chip and the wire are embedded by the transparent resin 400. However, this structure has a problem that light leaks to the substrate and cannot be used effectively. Further, the coating method of the transparent resin 400 is not described in detail, and the wiring pattern 300 is formed on part of the side surface and the back surface of the wiring substrate 500, which makes the manufacturing method difficult and an inexpensive light emitting device. It is difficult to provide.

  The present invention has been made in view of the above-described reasons, and has an object to provide a light-emitting device that can effectively utilize light leaking below the light-emitting element and can dissipate heat from the light-emitting element. It is.

  The present invention provides a substrate, a light emitting element provided on the substrate, a sealing resin including a phosphor that covers the light emitting element and is excited by the light emitting element, and a surface of the substrate opposite to the surface on which the light emitting element is provided. And a first reflection layer formed thereon.

  With this configuration, light leaked to the substrate side is reflected upward by the reflective layer, the phosphor is excited by the phosphor layer, and light from the light emitting element leaks from the substrate side to which the light emitting element is attached. Can be used effectively. In particular, even when the phosphor is settled in the vicinity of the substrate surface, it is possible to effectively excite the phosphor and increase the emission intensity. Further, since the light emitting element is provided on the substrate, heat dissipation of the light emitting element is also improved.

  In the light emitting device of the present invention, it is preferable that the first reflective layer is provided in a recess provided on the surface of the substrate opposite to the surface on which the light emitting element is provided.

  With this configuration, the reflective layer is housed in the recess, and mechanical damage (abrasion / abrasion) or the like when the light-emitting device is attached can be avoided.

  The present invention includes a substrate, a light emitting element provided on the substrate, a sealing resin including a phosphor that covers the light emitting element and is excited by the light emitting element, and a first reflective layer provided in the substrate. A light emitting device characterized by the above.

  With this configuration, it is possible to effectively utilize the light from the light emitting element that leaks from the side of the substrate on which the light emitting element is attached.

  In the light-emitting device of the present invention, it is preferable that the substrate is formed by bonding at least two substrates, and the first reflective layer is sandwiched between the at least two substrates.

  According to this configuration, since the reflective layer is inside the ceramic substrate, the substrate has strength, and further, mechanical damage (abrasion / abrasion) when the light emitting device is attached can be avoided.

  In the light emitting device of the present invention, it is preferable that the light emitting element is further provided on a second reflective layer provided on the substrate.

  With this configuration, a plurality of reflective layers are provided, and light leaking from the substrate side can be effectively utilized with higher accuracy.

  In the light emitting device of the present invention, it is further preferable that the first reflective layer reflects light transmitted from the light emitting element through the substrate.

  In the light emitting device of the present invention, it is preferable that the first reflective layer has an uneven portion on the side facing the light emitting element. Moreover, it is preferable that a 1st reflection layer is arrange | positioned so that a convex part may be under a light emitting element.

  With this configuration, it becomes possible to make the light leaked directly under the light emitting element re-enter the sealing resin layer containing the upper phosphor.

  In the light emitting device of the present invention, it is further preferable that the first reflective layer is an Ag—Nd alloy or Mo. In particular, when an alloy such as Ag—Nd is used, aggregation of Ag can be suppressed and a decrease in reflectance can be prevented.

  In the light emitting device of the present invention, it is preferable that the first reflective layer is within a range of 0.01 mm to 1 mm from the surface on which the light emitting element of the substrate is provided. If the distance is less than 0.01 mm, the production becomes difficult. If the distance is less than 1 mm, there is a problem that the light leaked to the substrate side cannot be effectively reflected upward. A more preferable range is within a range of 0.01 mm to 0.5 mm.

  In the light emitting device of the present invention, the substrate is preferably a ceramic substrate or an aluminum oxide substrate. The ceramic substrate is preferably made of one of aluminum oxide, aluminum nitride, boron nitride, silicon nitride, magnesium oxide, forsterite, steatite, low-temperature sintered ceramic, or a composite material thereof.

  The substrate made of the above materials has low thermal expansion, good thermal conductivity, and excellent thermal conductivity for applications that require higher heat dissipation and heat resistance. it can. Furthermore, the reliability of the LED chip can be improved, and deterioration of the phosphor due to heat from the LED chip can be suppressed. Although these have some spectral transmittance and light leaks from the light emitting element, as described above, the light leaked to the substrate side is reflected upward by the reflective layer and used effectively.

  In the light emitting device of the present invention, it is further preferable that the first reflective layer is provided so that the shape of the first reflective layer is on the outer side with respect to the outer periphery of the wiring pattern provided on the substrate. With this configuration, the light from each LED chip provided between the wiring patterns can obtain the effect of the reflective layer uniformly, and it is possible to avoid the occurrence of color misregistration.

  In the light emitting device of the present invention, the wiring pattern provided on the substrate is more preferably a transparent conductor film. With this configuration, it is possible to suppress light loss in the wiring pattern and increase the amount of light extracted.

  In the light emitting device of the present invention, the sealing resin containing the phosphor may be two layers. With this configuration, it is possible to more accurately control the chromaticity of light emitted to the outside.

The present invention is an illumination device using any one of the above light-emitting devices.
When the shape of the light-emitting device is rectangular or substantially square, the light-emitting elements can be arranged in close contact with each other, which is particularly preferable when manufactured as a fluorescent lamp type LED lamp.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to utilize effectively the light from the light emitting element which leaks from the board | substrate side to which the light emitting element was attached. In addition, heat from the light emitting element can be diffused through the substrate.

(Embodiment 1)
FIG. 1 shows a schematic view of a light emitting device 1000 of the present invention as viewed from above. The light emitting device includes an aluminum oxide (hereinafter referred to as alumina) substrate 1, a light emitting unit 1001, a positive electrode external connection land 101, a negative electrode external connection land 91, a screw of the attachment unit 13, external wiring connected to the external connection land, An external wiring hole through which the external wiring passes and a first phosphor-containing sealing resin layer 5 are formed.

  FIG. 2 shows a reflective layer, a wiring pattern, and the like of the light emitting device of this embodiment. Alumina substrate 1, wiring pattern 2 on alumina substrate, chip mounting portion 41, positive electrode external connection land 101, negative electrode external connection land 91, mounting portion 13, bonding wire positioning or chip mounting position guideline pattern 42, back surface of alumina substrate It is comprised from the reflection layer 44 formed in this.

Next, with reference to FIGS. 3A to 3E, a method for manufacturing the light emitting device 1000 will be described below.
(A) Alumina substrate 1 An Ag—Nd alloy thickness of 0.1 mm is formed as a reflective layer 44 on one surface having a thickness of 1 mm by sputtering. Thereafter, a substantially rectangular pattern is formed by photoetching. If the thickness of the reflective layer 44 is about 0.1 mm, the effect as the reflective layer can be further obtained. In addition, by using an alloy such as Ag—Nd, aggregation of Ag can be suppressed and a decrease in reflectance can be prevented.

Also, a gold film thickness of 0.07 mm is formed on the upper surface of the alumina substrate 1 with a thickness of 1 mm by sputtering. Thereafter, a wiring pattern shape 2 (width 1 mm, interval 2 mm) is formed by a photoetching method. Here, the wiring pattern shape 2 is formed at a position substantially coinciding with the shape of the reflective layer 44, but the reflective layer 44 is formed so as to protrude at least from the outermost peripheral shape of the wiring pattern shape 2. It is preferable that By forming in this way, the light from each LED chip provided between the wiring patterns can obtain the effect of the reflective layer uniformly, and it is possible to avoid the occurrence of color misregistration.
(B) The LED chip 3 (short side width 0.24 mm, long side 0.48 mm, thickness 0.14 mm) is fixed on an alumina substrate using an epoxy resin. The LED chip 3 and the wiring pattern 2 are electrically connected using a bonding wire W.
(C) A substantially rectangular silicone rubber sheet 4 is brought into close contact with the alumina substrate 1.
(D) Next, a sealing resin containing a phosphor is injected into the silicone rubber sheet 4 and the sealing resin containing the phosphor is thermally cured to form a first phosphor-containing sealing resin layer 5. To do.

More specifically, the following fluorescent substance and the silicone resin, which is a translucent resin, are weighted so that light with (x, y) = (0.345, 0.35) is obtained in the CIE chromaticity table. The mixture mixed so as to have a ratio of 5: 100 is poured into the silicone rubber sheet 4 and then cured at a temperature of 150 ° C. for 60 minutes to form the first phosphor-containing sealing resin layer 5. The chromaticity range is set to emit yellow light, for example, in the region (b) of FIG. The chromaticity range is an example of a preferable range in the present embodiment, and is not limited to this. The chromaticity range is appropriately changed according to the light intensity of light to be extracted. The same applies to the following embodiments.
(E) Thereafter, the silicone rubber sheet 4 is removed, and the light emitting portion 1001 is formed.

  FIG. 19 shows a schematic view of the silicone rubber sheet 4. It consists of the area | region 45 which inject | pours translucent resin containing a fluorescent substance. For this reason, the silicone rubber sheet 4 has a function like a dam (preventing resin leakage) when a translucent resin containing a phosphor is applied. Therefore, the silicone rubber sheet 4 has a feature that can be called a dam sheet. Further, the dam sheet can be used many times. In addition, the shape of the light emitting part (the shape of the phosphor layer) can be easily changed in various ways by changing the shape of the dam sheet.

Next, the effect of the present invention applied to a light emitting device using a phosphor will be described.
23A and 23B are schematic views partially highlighting the cross-sectional view of the first embodiment. As shown in FIG. 23A, in this embodiment, the light from the LED chip is reflected directly or by the reflection layer and collides with the phosphor, and the phosphor is excited to emit yellow light. In other words, the light that leaks to the substrate is reflected by the reflective layer and passes through the phosphor-containing sealing resin layer by this reflective layer, so that the phosphor is efficiently converted into, for example, yellow light. It becomes a high light emitting device.

  Moreover, although a fluorescent substance may settle in sealing resin (FIG.23 (b)), since this invention reflects light from the board | substrate side, even in that case, it cannot excite without a reflective layer. Even phosphors can be excited.

  Therefore, in the light emitting device using the phosphor as in the present embodiment, the phosphor is excited by effectively utilizing the light, and therefore, particularly as a light emitting device for a lighting device in which a strong light bulb color with yellow light is desired. Is preferred. FIG. 23 shows an embodiment in which the reflective layer is provided on the back surface of the substrate. However, the same effect can be obtained in the later-described embodiment in which the reflective layer is provided inside the substrate.

  In addition, when the substrate is etched and a reflective layer is provided in the dent, the reflective layer is stored in the dent and it is possible to avoid mechanical damage (abrasion / abrasion) etc. when mounting the light emitting device. is there.

  Also, by arranging the wiring pattern shape 2 in parallel and providing LED chip stacking areas between the wiring patterns, it becomes possible to freely determine the mounting pitch of the LED chips in the direction parallel to the wiring pattern, and to adjust the brightness of the light emitting device. Easy chromaticity adjustment and heat dissipation measures.

  In this embodiment, the outer shape of the light emitting device 1000 is substantially square and the shape of the light emitting unit 1001 is substantially rectangular, but it may be circular, elliptical, or the like.

  In addition, as a specific material for forming the phosphor layer, transparent resins having excellent weather resistance such as epoxy resin, urea resin, silicone resin, and light-transmitting inorganic materials such as silica sol and glass having excellent light resistance are suitable. Used for. Moreover, you may contain a diffusing agent with fluorescent substance. As specific diffusing agents, barium titanate, titanium oxide, aluminum oxide, silicon oxide, calcium carbonate, silicon dioxide and the like are preferably used.

  As an application example of a lighting fixture manufactured using the light-emitting device 1000, FIG. 16 shows a schematic diagram of a fluorescent lamp LED lamp 8000, and FIG.

  As described above, a blue LED chip in which a gallium nitride-based light emitting portion is formed on a sapphire substrate is used as the LED chip. However, it is not limited to a blue LED chip made of a gallium nitride compound semiconductor, and a blue LED chip made of a ZnO (zinc oxide) compound semiconductor may be used on a GaN substrate. It goes without saying that InGaAlP-based and AlGaAs-based compound semiconductor LED chips may be used.

  As the phosphor, Ce: YAG (cerium activated yttrium aluminum garnet) phosphor, Eu: BOSE or SOSE (europium activated strontium garnet) phosphor, europium activated α sialon phosphor, and the like can be suitably used.

  In addition, when forming the resin sealing body, the sealing resin for molds may be dripped. Further, the resin sealing body may be formed by using a mold. As the shape of the resin sealing body, for example, the resin sealing body is formed in a hemispherical shape that protrudes upward. It is also possible to have a lens function.

  The LED chip can be bonded with a thermosetting resin or the like. Specifically, an epoxy resin, an acrylic resin, an imide resin, etc. are mentioned.

  In addition, the P side electrode and the N side electrode were formed on one surface of the LED chip, and the state where two wires were bonded with the surfaces as the upper surface was shown. Moreover, although blue light emission was shown as an LED chip, the luminescent color is not limited to this, For example, the thing of ultraviolet light emission and the thing of green light emission may be used. Moreover, although the method of obtaining the white color by converting the light emitted from the LED chip with the phosphor has been shown, white, light bulb color, etc. using, for example, red, green, and blue LED chips without using the phosphor. You may get the color you need for lighting.

  The substrate may be a ceramic substrate other than alumina. Since any of the substrates has a small thermal expansion, good thermal conductivity, and higher thermal conductivity for applications requiring higher heat dissipation and heat resistance, a large current can be supplied as a drive current. Furthermore, the reliability of the LED chip can be improved, and deterioration of the phosphor due to heat from the LED chip can be suppressed.

  In particular, since the ceramic substrate has high insulating properties, it is not necessary to form an insulating layer on the substrate, so that the production becomes easy. Further, it is not necessary to secure a creepage distance between the side surface of the wiring pattern and the side surface of the LED chip.

  Furthermore, a wiring pattern can be directly formed on the ceramic substrate, and no solder resist is required. The problem of discoloration of the solder resist that has occurred when the wiring is thermally connected with solder or the like is also eliminated. Further, the problem of discoloration of the solder resist due to heat generation of the light emitting element is eliminated.

  In any case, the substrate suitable for mounting the LED chip causes light leakage from the mounted LED chip to the substrate.

  Hereinafter, another embodiment in which a part of the light-emitting device of Embodiment 1 is changed will be described. A description of features common to the first embodiment will be omitted, and characteristic portions of the respective embodiments will be described.

(Embodiment 2)
The light emitting device of Embodiment 2 is shown in FIG. In this embodiment, a reflective layer is provided inside a substrate.

  FIG. 5 is a schematic view seen from the cross section of the light emitting unit 1002. A Mo (molybdenum) thickness of 0.1 mm is formed as the reflective layer 44 in the ceramic substrate 1. Specifically, for example, the reflective layer 44 is sandwiched between two ceramic plates. The reflective layer 44 is formed by using, for example, a sputtering method and a photoetching method as in the first embodiment.

  With the configuration in which the reflective layer is provided inside the substrate, the reflective layer can be formed at a position where the light leaking to the substrate can be effectively reflected, and the overall thickness of the substrate is increased to further increase the mechanical strength and the heat dissipation effect. There is. Moreover, since Mo has a thermal expansion coefficient substantially the same as that of the substrate, it is possible to prevent damage resulting from the difference in the thermal expansion coefficient between the substrate and the reflective layer, and to ensure the reliability of the light emitting device. .

  Next, the wiring pattern 2 is formed. As described in the first embodiment, it is preferable that the reflective layer 44 is formed so as to protrude from at least the outermost peripheral shape of the wiring pattern shape 2. Next, the LED chip is bonded to the ceramic substrate using an epoxy resin, and the LED chip 3 and the wiring pattern 2 are electrically connected using a bonding wire W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

Therefore, the light emitting unit 1002 is manufactured.
As in the first embodiment, the light emitting device according to the present embodiment can effectively utilize light leaking from the substrate side. In addition, since the reflective layer is inside the ceramic substrate, the substrate has strength, and further, mechanical damage (abrasion / abrasion) when the light-emitting device is attached can be avoided.

(Embodiment 3)
The light emitting device of Embodiment 3 is shown in FIG.

  FIG. 6 is a schematic view seen from the cross section of the light emitting unit 1003. A silver layer thickness of 0.02 mm is formed as the second reflective layer 44 in the ceramic substrate 1. Next, a silver layer thickness of 0.05 mm as the wiring pattern 2, the LED chip mounting portion, and the first reflective layer 43 is formed.

  Here, the reflective layer 44 is formed so as to protrude from at least the outermost peripheral shape of the wiring pattern shape 2. Next, the LED chip 3 is bonded to the LED chip mounting portion and the first reflective layer 43 using a silicone resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wires W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

Therefore, the light emitting unit 1003 is manufactured.
The light-emitting device of this embodiment has a plurality of reflective layers, and can effectively use light leaking from the substrate side with higher accuracy than in the first and second embodiments. Further, when a eutectic chip can be used for the first reflective layer and the phosphor emits yellow light, a light emitting device having a light bulb color with stronger yellow light can be produced.

(Embodiment 4)
Next, the light-emitting device of Embodiment 4 is shown in FIG.

  FIG. 7 is a schematic view seen from the cross section of the light emitting unit 1004. A silver film thickness of 0.1 mm is formed as the reflective layer 44 in the ceramic substrate 1. Next, the wiring pattern 21 is formed on the ceramic substrate 1. Here, the wiring pattern 21 is formed so as to fall within the shape of the reflective layer 44.

Next, the LED chip 3 is bonded to the ceramic substrate 1 using an epoxy resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wires W. A sealing resin 5 containing a phosphor is formed so that the LED chip 3 and the wiring pattern 21 cover the bonding wires W. Here, a transparent conductor film was used as the wiring pattern 21. By using a transparent conductor film, light loss in the wiring pattern 21 can be suppressed, and the amount of light extracted can be increased. In the present embodiment, ITO is specifically used as the transparent conductor film, but in addition, In ₂ O ₃ (indium oxide), SnO ₂ (tin oxide), ZnO (zinc oxide), Sn (tin) ) Doped In ₂ O ₃ , Sb (antimony) doped SnO _{2 and the} like can also be applied. The wiring pattern had a thickness of 0.010 mm and a width of 0.7 mm.

(Embodiment 5)
Next, a light-emitting device of Embodiment 5 is shown in FIG.

  FIG. 8 is a schematic view seen from the cross section of the light emitting unit 1005. A Mo (molybdenum) thickness of 0.07 mm is formed as the reflective layer 44 in the ceramic substrate 1.

  The reflective layer 44 in the present embodiment is formed in an uneven shape, and the LED chip is mounted so that the convex portion is positioned substantially below the LED chip. By using such a concavo-convex reflective layer 44, the light irradiated to the ceramic substrate 1 is diffused at an angle by the convex portion of the reflective layer almost below the LED chip, and the light returns to the lower surface of the LED chip. Can be prevented. Therefore, it is possible to suppress light loss on the lower surface of the LED chip. Moreover, as a pattern of the unevenness | corrugation of the reflective layer 44, a convex part should just be in LED chip lower part, a stripe form may be sufficient, and a dot form may be sufficient. Moreover, even if there is no convex part below the LED chip, the effect of light diffusion can be obtained.

  Next, the wiring pattern 2 is formed on the ceramic substrate 1. Here, the wiring pattern 2 is formed so as to fall within the shape of the reflective layer 44. Next, the LED chip 3 is bonded to the ceramic substrate 1 using an epoxy resin. Next, the LED chip 3 and the wiring pattern 2 are electrically connected using the bonding wires W. A sealing resin 5 containing a phosphor is formed so as to cover the LED chip 3, the wiring pattern 2, and the bonding wire W.

(Embodiment 6)
Next, the light emitting device of Embodiment 6 will be described.

  This embodiment makes it possible to more accurately control the chromaticity of light irradiated to the outside by using two phosphor-containing sealing resin layers.

  FIG. 9 shows a schematic view of the light emitting device 2000 of the present invention as viewed from above. The light emitting device includes an aluminum oxide (hereinafter referred to as alumina) substrate 1, a light emitting unit 2001, a positive electrode external connection land 101, a negative electrode external connection land 91, a screw of the attachment unit 13, external wiring connected to the external connection land, An external wiring hole through which the external wiring passes, a first phosphor-containing sealing resin layer 5, and a second phosphor-containing sealing resin layer 51 applied on the first phosphor-containing sealing resin layer 5 Has been.

  FIG. 10 shows a wiring pattern, a top reflective layer, and the like of the light emitting device of this embodiment. Alumina substrate 1, wiring pattern 2 on alumina substrate, first reflection layer 43 and chip mounting portion 41, positive electrode external connection land 101, negative electrode external connection land 91, mounting portion 13, bonding wire positioning or chip mounting position guideline The pattern 42 and the second reflective layer 44 are included.

22A to 22E show a method for manufacturing the light emitting device 2000 as follows.
(A) Alumina substrate 1 in which an Ag thickness of 0.1 mm is formed as a second reflective layer 44 within a thickness of 1 mm of alumina substrate 1 is prepared. Here, the second reflective layer 44 has a substantially rectangular pattern.

A gold film thickness of 0.07 mm is formed as a wiring pattern on the surface of the alumina substrate 1 using a sputtering method. Thereafter, a wiring pattern shape 2 (width 1 mm, interval 2 mm) is formed by a photoetching method. Here, the wiring pattern shape 2 is formed at a position substantially matching the shape of the second reflective layer 44. Next, a silver foil film having a thickness of 0.01 mm, a length of 9 mm, and a width of 0.5 mm is formed on the surface of the alumina substrate 1 as the first reflective layer 43 and the chip mounting portion 41 by silver plating.
(B) The LED chip 3 (short side width 0.24 mm, long side 0.48 mm, thickness 0.14 mm) is fixed on the first reflective layer 43 and the chip mounting portion 41 using an epoxy resin. The LED chip 3 and the wiring pattern 2 are electrically connected using a bonding wire W.
(C) A substantially rectangular silicone rubber sheet 4 is brought into close contact with the alumina substrate 1.
(D) Next, the sealing resin 5 containing the first phosphor is injected into the silicone rubber sheet 4, and the sealing resin containing the phosphor is thermally cured.

  More specifically, the following fluorescent substance and a silicone resin which is a translucent resin are used so that light with (x, y) = (0.325, 0.335) is obtained in the CIE chromaticity table. After the mixture having been mixed so that the weight ratio is 5: 100 is poured into the silicone rubber sheet 4, the mixture is cured at a temperature of 150 ° C. for 30 minutes to form a sealing resin body 5 containing a phosphor. The chromaticity range is formed so as to fall within the region (a) of FIG.

  Next, the chromaticity characteristics of the light emitting device 2000 are measured. When the chromaticity range does not fall within the area (b) of FIG. 4, x, y = (0.345, 0...) In the CIE chromaticity table on the translucent resin 5 containing the first phosphor. 35) After injecting into the silicone rubber sheet a mixture of the following fluorescent substance and a silicone resin, which is a translucent resin, in a weight ratio of 2: 100 so as to obtain the light of 35), 150 A sealing resin body 51 containing a phosphor is formed by curing at a temperature of 1 ° C. for 1 hour.

Again, the chromaticity characteristics of the light emitting device 2000 are measured. When the chromaticity range is within the region (b) of FIG. 4, the light emitting unit 2001 is manufactured.
(E) Thereafter, the silicone rubber sheet 4 is removed, and the light emitting portion 2001 is formed.

  In the present embodiment, there are two phosphor encapsulating resin layers, a first phosphor-containing encapsulating resin layer 5 and a second phosphor-containing encapsulating resin layer 51. The light emitting device is formed by controlling so as to be in the chromaticity range. Therefore, it is possible to control the chromaticity of the light irradiated to the outside more accurately.

  Further, a eutectic chip can be used as the first reflective layer, and a light emitting device having a light bulb color with a stronger yellow light can be produced.

  Note that although the outer shape of the light emitting device 2000 is substantially square and the shape of the light emitting unit 2001 is substantially rectangular, the present invention can be applied to a circular shape, an elliptical shape, and the like.

Next, another embodiment of the sixth embodiment is shown in FIG.
FIG. 11 shows a wiring pattern of the light emitting device, a reflective layer on the upper surface, and the like. Alumina substrate 1, wiring pattern 2 on alumina substrate, first reflection layer 43 and chip mounting portion 41, positive electrode external connection land 101, negative electrode external connection land 91, mounting portion 13, bonding wire positioning or chip mounting position guideline The pattern 42 and the second reflective layer 44 are included.

  Only the shapes of the first reflective layer 43 and the chip mounting portion 41 are different, and the light emitting device manufacturing method (LED chip mounting, phosphor-containing sealing resin forming method, etc.) is the same as in the sixth embodiment. The shapes of the first reflective layer 43 and the chip mounting portion 41 were substantially round, with a diameter of 0.6 mm, a pitch of 0.738 mm, and a distance from the wiring pattern of approximately 1 mm in the middle.

  The light emitting device manufactured here is assumed to be 3000. Here, the second reflective layer 44 is formed in the alumina substrate 1.

Next, another embodiment of the sixth embodiment is shown in FIG.
FIG. 12 is a schematic view of another embodiment of the light emitting device 4000 as viewed from above. The light emitting device includes an alumina substrate 1, a light emitting part 4001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting part 13, and a first phosphor-containing sealing resin layer 5.

  Here, the outer shape of the light-emitting device 4000 was made substantially square. The shape of the light emitting unit 4001 is substantially circular.

  FIG. 13 is a schematic view of another embodiment of the light emitting device 5000 as viewed from above. The light emitting device includes an alumina substrate 1, a light emitting portion 5001, a positive electrode external connection land 101, a negative electrode external connection land 91, an attachment portion 13, a first phosphor-containing sealing resin layer 5, and a first phosphor-containing sealing resin layer. 5 is composed of a second phosphor-containing sealing resin layer 51 coated on almost the entire surface. Here, the outer shape of the light emitting device 5000 is circular, and the light emitting unit 5001 has a hexagonal shape.

  Here, the first reflective layer 43 and the chip mounting portion 41 are formed on the ceramic substrate 1. The diameter was 0.5 mm and the pitch was 0.75 mm. The second reflective layer 44 has a hexagonal shape that is substantially the same as that of the light emitting portion 5001.

  FIG. 14 is a schematic view of another embodiment of the light emitting device 6000 as viewed from above. The light emitting device includes a ceramic substrate 1, a light emitting part 6001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting part 13, and a first phosphor-containing sealing resin layer 5. Here, the outer shape of the light emitting device 6000 is circular, and the light emitting unit 6001 is also circular. The reflective layer 44 has a circular shape that is substantially the same as that of the light emitting portion 6001.

  FIG. 15 is a schematic view of another embodiment of the light emitting device 7000 as viewed from above. The light emitting device includes a ceramic substrate 1, a light emitting portion 7001, a positive electrode external connection land 101, a negative electrode external connection land 91, a mounting portion 13, a first phosphor-containing sealing resin layer 5 formed in a rectangular shape, the first The second phosphor-containing sealing resin layer 51 is partially coated on the phosphor-containing sealing resin layer 5. Here, the outer shape of the light emitting device 7000 is circular, and the light emitting unit 7001 is rectangular. The reflective layer 44 has a rectangular shape that is substantially the same as that of the light emitting portion 7001.

  As described above, the light emitting device of each embodiment described in Embodiments 1 to 6 including other embodiments is applied as the light emitting device of FIG. 16 or FIG. 17 by appropriately changing the outer shape of the light emitting device and the light emitting unit. A lighting fixture which is an application example can be manufactured. Moreover, the lighting fixture which is the application example shown in FIG. 18 is also producible.

  In any of the light-emitting devices shown in the embodiments, the light from the LED chip is provided with a reflective layer on the back surface of the substrate on which the light-emitting elements are provided (the surface opposite to the surface on which the light-emitting elements are provided) or inside the substrate Thus, it is possible to increase the amount of light extracted by reflecting light leaking to the substrate side. In particular, in a light-emitting device used for a lighting fixture, an LED having a large light output is used, and thus a loss of light leaking to the substrate is a problem, and the present invention can be suitably applied.

  In addition, as described in the above embodiment, the light-emitting device of the present invention has an effect that there is little color misregistration and, like the illumination device, backlight illumination such as a display device that requires uniform light irradiation. It can be effectively applied even for use.

  Furthermore, in this invention, although the LED chip is used as a light emitting element, even if it employs other light emitting elements without being limited to this, it can be applied, and is limited to a light emitting device using a plurality of LED chips. In addition, the above-described effects can be obtained and applied to a light-emitting device equipped with one LED chip.

  In addition, it should be considered that the above-described embodiments disclosed herein are illustrative in all respects and are not restrictive. The technical scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a schematic top view which shows the light-emitting device of this invention. It is the schematic of the wiring pattern and reflection layer of the light emission part which are shown in Embodiment 1 of this invention. It is a manufacturing process schematic sectional drawing shown in Embodiment 1 of this invention. It is a chromaticity table. It is a schematic sectional drawing which shows the light-emitting device of Embodiment 2 of this invention. It is a schematic sectional drawing which shows the light-emitting device of Embodiment 3 of this invention. It is a schematic sectional drawing which shows the light-emitting device of Embodiment 4 of this invention. It is a schematic sectional drawing which shows the light-emitting device of Embodiment 5 of this invention. It is a schematic top view which shows the light-emitting device of Embodiment 6 of this invention. It is the schematic of the wiring pattern and reflection layer of the light emission part which are shown in Embodiment 6 of this invention. It is the schematic of the wiring pattern and reflection layer of the light emission part of another form of Embodiment 6 of this invention. It is a schematic sectional drawing which shows the light-emitting device of another form of Embodiment 6 of this invention. It is a schematic sectional drawing which shows the light-emitting device of another form of Embodiment 6 of this invention. It is a schematic sectional drawing which shows the light-emitting device of another form of Embodiment 6 of this invention. It is a schematic sectional drawing which shows the light-emitting device of another form of Embodiment 6 of this invention. It is the schematic of the lighting fixture using the light-emitting device of this invention. It is the schematic of the lighting fixture using the light-emitting device of this invention. It is the schematic of the lighting fixture using the light-emitting device of this invention. It is the schematic of the silicone rubber sheet (dam sheet) used for the manufacturing method of this invention. It is a schematic sectional drawing of a prior art example. It is a schematic sectional drawing of a prior art example. It is a manufacturing process schematic sectional drawing shown in Embodiment 6 of this invention. It is a figure for demonstrating the effect of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Board | substrate, 2 Wiring pattern, 3 LED chip, 4 Silicone rubber sheet, W bonding wire, 5 Translucent resin containing 1st fluorescent substance, 51 Translucent resin containing 2nd fluorescent substance, 101 positive Electrode wiring pattern, 91 Negative electrode wiring pattern, 41 Chip mounting portion, 43 First reflective layer, 44 Reflective layer or second reflective layer, 1000, 2000, 3000, 4000, 5000, 6000, 7000 Light emitting device, 1001, 1002 1003, 1004, 1005, 4001, 5001, 6001, 7001 Light emitting part, 8000,8001 Fluorescent lamp type LED lamp, 8002 Light bulb type LED lamp.

Claims (16)

A substrate,
A light-emitting element provided on the substrate; a sealing resin that covers the light-emitting element and includes a phosphor excited by the light-emitting element;
A light emitting device comprising: a first reflective layer provided on a surface of the substrate opposite to the surface on which the light emitting element is provided.   2. The light emitting device according to claim 1, wherein the first reflective layer is provided in a recess provided on a surface of the substrate opposite to a surface on which the light emitting element is provided. A substrate,
A light-emitting element provided on the substrate; a sealing resin that covers the light-emitting element and includes a phosphor excited by the light-emitting element;
A light emitting device comprising: a first reflective layer provided inside the substrate. The substrate is configured by bonding at least two substrates,
The light emitting device according to claim 3, wherein the first reflective layer is sandwiched between the at least two substrates.   The light-emitting device according to claim 1, wherein the light-emitting element is provided on a second reflective layer provided on the substrate.   The light emitting device according to claim 1, wherein the first reflective layer reflects light transmitted from the light emitting element through the substrate.   The light emitting device according to claim 1, wherein the first reflective layer has an uneven portion on a side facing the light emitting element.   The light emitting device according to claim 7, wherein the first reflective layer is disposed so that a convex portion is below the light emitting element.   The light emitting device according to claim 1, wherein the first reflective layer is made of an alloy of Ag—Nd or Mo.   10. The light emitting device according to claim 1, wherein the first reflective layer is within a range of 0.01 mm to 1 mm from a surface of the substrate on which the light emitting element is provided.   The light emitting device according to claim 1, wherein the substrate is a ceramic substrate or an aluminum oxide substrate.   The ceramic substrate is made of one of aluminum oxide, aluminum nitride, boron nitride, silicon nitride, magnesium oxide, forsterite, steatite, low-temperature sintered ceramic, or a composite material thereof. 11. The light emitting device according to 11.   13. The light emitting device according to claim 1, wherein a shape of the first reflective layer is provided so as to be on an outer side with respect to an outer peripheral portion of a wiring pattern provided on the substrate.   The light emitting device according to claim 1, wherein the wiring pattern provided on the substrate is a transparent conductive film.   The light-emitting device according to claim 1, wherein the sealing resin containing the phosphor has two layers.   The illuminating device using the light-emitting device in any one of Claims 1-15.

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