KR20170043126A - High power led package and method of the same improved color coordinates and thermal conductivity - Google Patents

High power led package and method of the same improved color coordinates and thermal conductivity Download PDF

Info

Publication number
KR20170043126A
KR20170043126A KR1020150142111A KR20150142111A KR20170043126A KR 20170043126 A KR20170043126 A KR 20170043126A KR 1020150142111 A KR1020150142111 A KR 1020150142111A KR 20150142111 A KR20150142111 A KR 20150142111A KR 20170043126 A KR20170043126 A KR 20170043126A
Authority
KR
South Korea
Prior art keywords
frame
transparent substrate
thermally conductive
conductive transparent
thermal conductivity
Prior art date
Application number
KR1020150142111A
Other languages
Korean (ko)
Inventor
전시욱
김기현
김완호
김재필
송상빈
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to KR1020150142111A priority Critical patent/KR20170043126A/en
Publication of KR20170043126A publication Critical patent/KR20170043126A/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

The present invention relates to a high-power LED package with improved degree of freedom of color coordinates and thermal conductivity, and specifically, to a high-power LED package, which is able to reduce color deviation by using a fluorescent substance and to design a cut-off line. The present invention provides a high-power LED package with improved color coordinates and thermal conductivity using a plurality of LED chips on a substrate, comprising: a frame which has a plurality of LED chips mounted on a top surface thereof at regular intervals, and a substrate coming in contact with a bottom surface thereof, wherein both side ends of the frame are bent at a certain angle; a thermal-conductive transparent substrate which is mounted on top parts of both side ends of the frame to discharge the heat, which is generated in the plurality of LED chips, to the frame; and a fluorescent substance film which comprises a fluorescent substance to form color coordinates on the top surface of the thermal-conductive transparent substrate. According to the present invention, the present invention can connect the frame to the thermal-conductive transparent substrate, disperse heat through the frame, prevent the carbonization of silicon or the generation of cracks, mount the fluorescent substance film on the substrate with high transmittance and thermal conductivity, and simultaneously improve both color coordinates and thermal conductivity.

Description

TECHNICAL FIELD [0001] The present invention relates to a high power LED package having improved color coordinates and thermal conductivity, and a method of manufacturing the same.

The present invention relates to a high output LED package having improved color coordinate degrees and thermal conductivity, and more particularly, to a high output LED package using a light source such as an automobile head lamp that requires a high output at a high environmental temperature and a small area.

In general, a light emitting diode (LED) is a semiconductor device that emits light when a current flows, and is a PN junction diode made of GaAs or GaN optical semiconductor, which converts electrical energy into light energy. These LEDs have advantages such as low power consumption, high efficiency and long operation life compared with conventional light sources such as incandescent lamps and fluorescent lamps, and the demand for them is continuously increasing.

In recent years, the application range of LEDs has been gradually expanded from small-sized lighting of mobile terminals to indoor and outdoor general lighting, automobile lighting, and backlight for large LCD (Liquid Crystal Display). Accordingly, the power applied to the light emitting chip caused by the light emission increases in proportion to the intensity of the light generated when the current is applied. In the high output LED having high power consumption, the light emitting chip and the package itself are prevented from being deteriorated A heat dissipation structure is generally adopted.

In this connection, in Korean Patent Laid-Open Publication No. 2009-0072941 (high output LED package and method of manufacturing the same), a heat sink having a chip mounting portion on which at least one light emitting chip is mounted, and at least one conductive via hole; An insulating layer having a predetermined thickness on an outer surface of the heat discharging body; And an electrode portion electrically connecting the conductive via hole and the light emitting chip.

However, in the prior art, a phosphor for converting light and a transparent resin such as silicon are mixed and applied to an LED package to realize white color. However, since the transparent resin has a very low thermal conductivity, when the high output LED is used, the heat generated from the phosphor is accumulated in the process of converting the light, and the temperature is continuously increased, so that carbonization or cracking of the transparent resin occurs due to the self- . In order to solve this problem, a conventional technique of applying heat-resistant single crystal or a color-converting material of a ceramic material on an LED chip is used to coat a reflective material around the chip, which may cause an arm part or a single crystal or a ceramic material There is a problem in achieving a desired color coordinate because a single color is emitted.

Korean Patent Publication No. 2009-0072941

It is an object of the present invention to provide a high-power LED package which achieves color coordinates without occurrence of an arm part. It is another object of the present invention to provide a method of manufacturing a high-power LED package for emitting a large amount of heat by light emission by a phosphor.

According to an aspect of the present invention, there is provided a high output LED package using a plurality of LED chips on a substrate, wherein a plurality of LED chips are mounted on the upper surface at a predetermined interval and the lower surface is in contact with the substrate, A curved frame; A thermally conductive transparent substrate mounted on both sides of the frame to emit heat generated from the plurality of LED chips into the frame; And a phosphor film containing a phosphor for forming a color coordinate on the upper surface of the thermally conductive transparent substrate, wherein the phosphor layer has improved color coordinates and thermal conductivity.

Preferably, the LED chips may be mounted on the frame and spaced apart and electrically connected at predetermined intervals.

Preferably, the P and N electrodes may be formed on the upper or lower surface of the LED chip, respectively.

Preferably, the frame is folded upward at a predetermined angle at both sides and a barrier is formed in the upper part, and the thermally conductive transparent substrate can be molded into the barrier.

Preferably, the substrate and the frame include an electrode provided with an insulating layer provided vertically or horizontally, and may be integrally formed of an aluminum material.

Preferably, the thermally conductive transparent substrate may be configured in a planar shape capable of transmitting heat generated from the upper portion to the side or lower portion of the frame through the barrier.

Preferably, the thermally conductive transparent substrate may be sapphire or glass.

Preferably, the phosphor film further comprises a translucent resin material for fixing the particles of the phosphor, and the translucent resin material is applied to the upper surface of the thermally conductive transparent substrate to absorb the blue light generated from the LED chip.

Preferably, the phosphor may be at least one of a ceramic system, a quantum dot, a garnet system, a silicate system, a nitride system, and an oxynitride system.

Preferably, the display device may further include a light-transmitting encapsulation layer that encapsulates the LED chip between the LED chip and the thermally conductive transparent substrate.

The present invention also provides a method of manufacturing a light emitting device, comprising: (a) arranging a plurality of LED chips on a frame top surface at predetermined intervals; (B) arranging a thermally conductive transparent substrate on both sides of the frame so as to emit heat generated at the top of the frame to the side or bottom of the frame; (C) arranging the phosphor film on the upper surface of the thermally conductive transparent substrate using a transparent adhesive layer; And (d) arranging the frame on the substrate. The present invention also provides a method of manufacturing a high-power LED package having improved color coordinates and thermal conductivity.

Preferably, after step (d), encapsulating the light-transmitting encapsulating layer between the thermally conductive transparent substrate and the LED chip.

According to the present invention, there is an advantage that a frame is connected to a thermally conductive transparent substrate and heat is dispersed through the frame to prevent carbonization or cracking of silicon.

Further, the present invention has an advantage that a phosphor film can be mounted on a substrate having a high transmittance and a high thermal conductivity to simultaneously achieve improvement in color coordinates and thermal conductivity.

FIG. 1 is a view of a high-power LED package in which a conventional color conversion material is separately attached and a reflective material is coated around the chip.
FIG. 2 is a view showing an appearance of an arm part of a conventional high-power LED package.
3 is a view of a high-power LED package having improved color coordinates and thermal conductivity according to an embodiment of the present invention.
FIG. 4 is a view illustrating heat emission from a high-power LED package according to an embodiment of the present invention.
5 is a flowchart illustrating a method of manufacturing a high-power LED package according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the exemplary embodiments. Like reference numerals in the drawings denote members performing substantially the same function.

The objects and effects of the present invention can be understood or clarified naturally by the following description, and the purpose and effect of the present invention are not limited by the following description. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

1 is a view of a high-power LED package 1 in which a conventional color conversion material 13 is separately attached and a reflective material is coated around the chip. Referring to FIG. 1, a conventional LED package may include a substrate 10, an LED chip 11, a color conversion material 13, and a side light reflecting material 15.

The substrate 10 may generally be a printed circuit board (PCB). The LED (Light Emitting Diode) basically uses the LED chip 11, which is a solid state light emitting device formed by joining semiconductors. When a voltage is applied to the LED, energy corresponding to the bandgap of the semiconductor is emitted in the form of light by the combination of electrons and holes. These LEDs have many advantages such as high output characteristics at low current requirements, quick response, long lifetime, and rigid package structure.

The color conversion material 13 applied to the high output LED package 1 may be composed of phosphor in glass, single crystal, polycrystal, and ceramic. The color conversion material 13 refers to a material that emits light using a light source generated from the LED chip 11. When a high light output is generated in a region having a small light emitting area such as an automobile head lamp, A color conversion material having high heat resistance is required. However, existing high temperature resistant color conversion materials such as Phosphor in Glass, Single Crystal, Polycrystal, and Ceramic emit only a single color, which causes problems in achieving high color rendering and desired color temperature.

In addition, the conventional technology is to attach heat-resistant single crystal or ceramic color-converting material (13) on the LED chip individually to enhance the heat resistance, and then to coat the reflective material around the chip to obtain uniform color uniformity Gt; LED < / RTI > In this case, there may arise a problem that a dark zone occurs.

FIG. 2 is a view showing an appearance of an arm portion of a conventional high-output LED package 1. FIG. Referring to FIG. 2, the light emitted from the side surface of the LED chip 11 is applied to the upper side to improve the color temperature deviation and the light output. In this case, Separation occurs, which causes darkening.

3 is a view of a high-power LED package 1 with improved color coordinates and thermal conductivity according to an embodiment of the present invention. 3, the high power LED package 1 includes a substrate 10, an LED chip 11, a frame 30, a thermally conductive transparent substrate 50, a transparent adhesive layer 71, a phosphor film 70, Layer 90 as shown in FIG.

The substrate 10 may be generally constructed of a printed circuit board (PCB). The substrate 10 may include a chip base or a substrate material in which the LED chip 11 and the LED chip 11 are embedded. The substrate 10 may be configured to include internal terminals formed as conductive patterns.

The substrate 10 and the frame 30 may include an electrode provided with an insulating layer provided vertically or horizontally, and may be formed as an integral unit of an aluminum material. The aluminum material has good heat dissipation performance and high reflectance.

The LED chips 11 may be mounted on the frame 30, spaced apart from each other at a predetermined interval and electrically connected to each other, and P and N electrodes may be formed on the upper or lower surface, respectively. The LED chip 11 may include a horizontal type light emitting diode having P and N electrodes formed on its upper surface or a vertical type light emitting diode having P and N electrodes formed on the upper and lower surfaces, respectively.

A plurality of LED chips 11 are mounted on the upper surface of the frame 30 at predetermined intervals, and the lower surface of the frame 30 contacts the substrate 10, and both ends of the LED chip 11 can be bent at a predetermined angle. The LED chip 11 may be attached on the chip base by a conductive or non-conductive adhesive. The LED chip 11 can be electrically connected to the chip base by common bonding wires.

The frame 30 is mounted on the upper part of the LED chip 11 in the form of a flat plate, and both ends can be bent at a predetermined angle. In the embodiment of the present invention, And the phosphor film 70, as shown in Fig.

The frame 30 has both ends bent upward at a predetermined angle to form a barrier in the upper part and the thermally conductive transparent substrate 50 is molded with a transparent adhesive or an adhesive containing thermally conductive particles to improve thermal conductivity It can receive dispersed heat and release it to the outside.

The frame 30 may be made of ceramic or metal. Ceramic is a non-metallic solid of inorganic compound prepared by heat and cooling method, which is also called ceramics. It not only conducts electricity well but also can withstand high temperature. The frame 30 may also be embodied as a metal to emit the heat of the thermally conductive transparent substrate 50 to be described later.

FIG. 4 shows a state in which heat is emitted from the high-output LED package 1 according to the embodiment of the present invention. Referring to FIG. 4, it can be seen that heat generated in the LED chip 11 is discharged to the outside through the frame 30 through the thermally conductive transparent substrate 50.

The thermally conductive transparent substrate 50 may be mounted on both sides of the frame 30 to emit heat generated from the plurality of LED chips 11 to the frame 30. [ The thermally conductive transparent substrate 50 may enhance the thermal conductivity and the thermal conductivity and discharge the heat received in the phosphor film 70 to the frame 30. [

The thermally conductive transparent substrate 50 may be formed in a planar shape capable of transmitting heat generated from the upper side to the side or lower side of the frame 30 through the barrier. The thermally conductive transparent substrate 50 may be made of sapphire or glass.

The phosphor film 70 may include a plurality of phosphor powders in a polymer matrix material (silicon, epoxy) to form uniform color coordinates on the upper surface of the thermally conductive transparent substrate 50. The phosphor absorbs blue light generated from the LED chip 11 and can change the color. In this case, the unconverted light is converted into heat, and the more the phosphor content is, the more heat is generated.

The phosphor film 70 may be a film grown in a single crystal or polycrystal structure having high heat resistance. This is because the higher the phosphor content, the more heat is generated. When the transparent polymer matrix material (silicon, epoxy) used in general is used to produce a film, heat resistance may be low and carbonization and cracking may occur.

The phosphor may be at least one of a ceramic system, a quantum dot, a garnet system, a silicate system, a nitride system, and an oxynitride system.

The phosphor film 70 may further include a translucent resin material for fixing the particles of the phosphor and the translucent resin material may be applied to the upper surface of the thermally conductive transparent substrate 50 to absorb the blue light generated from the LED chip 11 .

The light-transmitting resin material may include any one of a silicone resin, an epoxy resin, an acrylic resin, a urethane resin, a photoresist and a glass.

The sealing layer 90 may serve to seal the LED chip 11 between the LED chip 11 and the thermally conductive transparent substrate 50. The sealing technique is a technique for blocking oxygen or moisture introduced into the LED chip 11, and is a technology for effectively shielding moisture or oxygen, which is generally introduced into the organic electronic device from the outside, and improving the life and durability of the device to be. In the embodiment of the present invention, a silicon encapsulation layer 90 can be used.

Hereinafter, a manufacturing method for manufacturing the above-described high-output LED package 1 will be described.

5 shows a flowchart of a method of manufacturing a high-output LED package 1 according to an embodiment of the present invention. Referring to FIG. 5, a method of manufacturing a high-power LED package 1 includes arranging a plurality of LED chips 11 at an interval on a frame (S10); Arranging (S30) a thermally conductive transparent substrate on both sides of the frame to emit heat generated at the top of the frame to the side or bottom of the frame; Arranging the phosphor film on the top surface of the thermally conductive transparent substrate using a transparent adhesive layer (S50); Arranging the frame on the substrate (S70); And sealing the transparent encapsulating layer between the thermally conductive transparent substrate and the LED chip (S90).

The manufacturing method of the high output LED package (1) can reduce the color deviation and cut-off line design without the light guide, thereby reducing the price, improving the light efficiency, reducing the module size, improving the degree of design freedom, , Cut-off line shape control, and so on.

The high power LED package 1 can change the light source to a desired color temperature by replacing only the above-mentioned phosphor film.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. will be. Therefore, the scope of the present invention should not be limited to the above-described embodiments, but should be determined by all changes or modifications derived from the scope of the appended claims and equivalents of the following claims.

1: High power LED package
10: substrate 11: LED chip
13: color conversion material 15: side light reflection material
30: frame 50: thermally conductive transparent substrate
70: phosphor film 71: transparent adhesive layer
90: sealing layer

Claims (12)

In a high output LED package using a plurality of LED chips on a substrate,
Wherein the plurality of LED chips are mounted on the upper surface at predetermined intervals, the lower surface is in contact with the substrate, and the opposite side ends are bent at a predetermined angle;
A thermally conductive transparent substrate mounted on both sides of the frame to emit heat generated from the plurality of LED chips to the frame; And
And a phosphor film including a phosphor for forming a color coordinate on an upper surface of the thermally conductive transparent substrate, wherein the phosphor layer has improved color coordinates and thermal conductivity.
The method according to claim 1,
Wherein the LED chip comprises:
Wherein the LED package is mounted on the frame and is spaced apart from the LED chip by a predetermined distance and electrically connected to the frame.
3. The method of claim 2,
Wherein the LED chip comprises:
P, and N electrodes are formed on the upper or lower surface, respectively.
The method according to claim 1,
The frame includes:
Wherein both ends are bent upward at a predetermined angle so that a barrier is formed in an upper portion and the thermally conductive transparent substrate is molded in the barrier.
5. The method of claim 4,
Wherein the substrate and the frame,
And an electrode provided with an insulating layer provided vertically or horizontally,
A high-power LED package having improved color coordinates and thermal conductivity, the LED package being made of an aluminum material.
5. The method of claim 4,
Wherein the thermally conductive transparent substrate comprises:
Wherein the light emitting diode package has a planar shape capable of transmitting heat generated from the upper portion to a side or a lower portion of the frame through the barrier.
5. The method of claim 4,
Wherein the thermally conductive transparent substrate comprises:
Sapphire or glass, wherein the color coordinate and thermal conductivity are improved.
The method according to claim 1,
In the phosphor film,
Further comprising a light-transmitting resin material for fixing the particles of the phosphor,
The light-
And the blue LED is applied to the upper surface of the thermally conductive transparent substrate to absorb the blue light generated from the LED chip.
The method according to claim 1,
The above-
Wherein the LED package is at least one of a ceramic, a quantum dot, a garnet, a silicate, a nitride, or an oxynitride.
The method according to claim 1,
And a translucent encapsulant layer for encapsulating the LED chip between the LED chip and the thermally conductive transparent substrate.
(a) arranging a plurality of LED chips on an upper surface of the frame at predetermined intervals;
(b) arranging a thermally conductive transparent substrate on both sides of the frame to emit heat generated at the top of the frame to the side or bottom of the frame;
(c) arranging a phosphor film on a top surface of the thermally conductive transparent substrate using a transparent adhesive layer; And
(d) arranging the frame on the substrate, wherein the color coordinate and the thermal conductivity are improved.
12. The method of claim 11,
After the step (d)
And encapsulating the transparent encapsulating layer between the thermally conductive transparent substrate and the LED chip to improve the color coordinate and thermal conductivity.
KR1020150142111A 2015-10-12 2015-10-12 High power led package and method of the same improved color coordinates and thermal conductivity KR20170043126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150142111A KR20170043126A (en) 2015-10-12 2015-10-12 High power led package and method of the same improved color coordinates and thermal conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150142111A KR20170043126A (en) 2015-10-12 2015-10-12 High power led package and method of the same improved color coordinates and thermal conductivity

Publications (1)

Publication Number Publication Date
KR20170043126A true KR20170043126A (en) 2017-04-21

Family

ID=58705385

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150142111A KR20170043126A (en) 2015-10-12 2015-10-12 High power led package and method of the same improved color coordinates and thermal conductivity

Country Status (1)

Country Link
KR (1) KR20170043126A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117239047A (en) * 2023-11-14 2023-12-15 深圳市安卓安科技有限公司 LED packaging structure, LED module and LCD display applying LED packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117239047A (en) * 2023-11-14 2023-12-15 深圳市安卓安科技有限公司 LED packaging structure, LED module and LCD display applying LED packaging structure
CN117239047B (en) * 2023-11-14 2024-03-12 深圳市安卓安科技有限公司 LED packaging structure, LED module and LCD display applying LED packaging structure

Similar Documents

Publication Publication Date Title
US10627098B2 (en) LED filament and LED light bulb having the same
US9837387B2 (en) Light emitting apparatus
US10217918B2 (en) Light-emitting element package
US20120044669A1 (en) Light-emitting module, light source device, liquid crystal display device, and method of manufacturing light-emitting module
US8783911B2 (en) LED packaging structure having improved thermal dissipation and mechanical strength
US20110037083A1 (en) Led package with contrasting face
KR20080027355A (en) Light emitting device
JP2007116138A (en) Light emitting device
TWI615998B (en) Phosphor and light emitting device package including the same
KR101346122B1 (en) Illumination system with leds
JP2008251663A (en) Light-emitting device and illumination apparatus
JPWO2010123052A1 (en) Light emitting device
JP2007194675A (en) Light emitting device
US20130341657A1 (en) Light-emitting module and luminaire
US20070246726A1 (en) Package structure of light emitting device
JP4552798B2 (en) LED lighting device
KR100954858B1 (en) A high-luminance led package and method for manufacturing thereof
US9865571B2 (en) Light emitting diode lighting module
KR20170043126A (en) High power led package and method of the same improved color coordinates and thermal conductivity
US20220005987A1 (en) Lens arrangements for light-emitting diode packages
TW201403870A (en) Light emitting diode element and manufacturing mathod thereof
KR20200134465A (en) Light emitting device package, lighting device and method of manufacturing the same
JP2007116127A (en) Light emitting device
CN216528888U (en) LED lamp with high light condensation and high brightness
KR102131309B1 (en) Phosphor and light emitting device package including the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application