TW201403870A - Light emitting diode element and manufacturing mathod thereof - Google Patents
Light emitting diode element and manufacturing mathod thereof Download PDFInfo
- Publication number
- TW201403870A TW201403870A TW101123793A TW101123793A TW201403870A TW 201403870 A TW201403870 A TW 201403870A TW 101123793 A TW101123793 A TW 101123793A TW 101123793 A TW101123793 A TW 101123793A TW 201403870 A TW201403870 A TW 201403870A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- emitting diode
- retaining wall
- wall portion
- substrate
- Prior art date
Links
Landscapes
- Led Device Packages (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
Description
本發明係有關於一種發光元件以及發光元件的製作方法,尤指一種發光二極體以及該發光二極體的製作方法。The present invention relates to a light-emitting element and a method of fabricating the same, and more particularly to a light-emitting diode and a method of fabricating the same.
發光二極體(Light Emitting Diode,LED)為一半導體元件,初期主要作為指示燈、交通號誌與招牌看板等。隨著白光發光二極體的出現,開始被應用於照明設備,如手電筒、車燈,甚至是一般室內外照明之燈泡或燈管。發光二極體主要是透過半導體化合物將電能轉換為光能,達到發光的效果,因此具有壽命長、耗電量低與轉換效率高等特性。加上發光二極體之封裝殼體是利用環氧樹脂(epoxy)或矽樹脂(silicone resin)製作而成,因此具有不易破損的優點,同時發光二極體是一種極小的發光源,所以可配合各種應用設備的小型化。The Light Emitting Diode (LED) is a semiconductor component, and it is mainly used as an indicator light, a traffic sign, and a signboard. With the advent of white light-emitting diodes, they have begun to be used in lighting equipment such as flashlights, lights, and even general indoor and outdoor lighting bulbs or tubes. The light-emitting diode mainly converts electric energy into light energy through a semiconductor compound to achieve a light-emitting effect, and thus has characteristics such as long life, low power consumption, and high conversion efficiency. The package body of the light-emitting diode is made of epoxy resin or silicone resin, so it has the advantage of being easily broken, and the light-emitting diode is a very small light source, so Cooperate with the miniaturization of various application equipment.
習知製作白光發光二極體元件的方法大多使用藍光發光二極體晶粒激發黃色的釔鋁石榴石系(Yttrium Aluminum Garnet,YAG)螢光粉,其係將前述黃色螢光粉混合於環氧樹脂或矽樹脂內部,並通過點膠等方式將混合有黃色螢光粉的環氧樹脂及矽樹脂形成於藍光發光二極體晶粒上並包覆藍光發光二極體晶粒,使藍光發光二極體晶粒發出的部分藍光光線激發黃色螢光粉並產生一黃光光線。前述黃光光線與藍光發光二極體晶粒發出的其它部分藍光光線混光後,就會產生白光光線。Conventionally, a method of fabricating a white light-emitting diode element is generally performed by using a blue light-emitting diode grain to excite a yellow Yttrium Aluminum Garnet (YAG) phosphor powder, which is a mixture of the aforementioned yellow phosphor powder in a ring. An epoxy resin or a ruthenium resin is internally formed, and an epoxy resin and a ruthenium resin mixed with a yellow phosphor powder are formed on the blue light-emitting diode crystal grains by a dispensing method, and the blue light-emitting diode crystal grains are coated to make the blue light. Part of the blue light emitted by the light-emitting diode grains excites the yellow phosphor and produces a yellow light. When the yellow light is mixed with other portions of the blue light emitted by the blue light emitting diode crystal, white light is generated.
然而,當黃色螢光粉混合於環氧樹脂或矽樹脂內部時,其黃色螢光粉容易產生沉澱,以致於白光發光二極體產生混光效果不佳及色溫不均勻等問題。此外,藍光發光二極體晶粒點亮時產生的高溫,係使得黃色螢光粉老化變質,進而導致白光發光二極體元件產生嚴重色偏的問題。However, when the yellow fluorescent powder is mixed inside the epoxy resin or the enamel resin, the yellow fluorescent powder is liable to precipitate, so that the white light emitting diode has problems such as poor light mixing effect and uneven color temperature. In addition, the high temperature generated when the blue light emitting diode grain is lit causes the yellow fluorescent powder to deteriorate and deteriorate, thereby causing a problem of severe color shift of the white light emitting diode element.
鑒於先前技術所述,本發明之一目的,在於提供一種發光二極體元件,該發光二極體元件之一螢光片係設置於一包覆發光二極體晶粒的透光膠材上,如此可以避免混光效果不佳、色溫不均勻及螢光粉受熱老化等問題In view of the foregoing, it is an object of the present invention to provide a light emitting diode device, wherein a fluorescent film of the light emitting diode element is disposed on a light transmissive rubber coated with a light emitting diode die. This can avoid problems such as poor light mixing, uneven color temperature, and aging of the fluorescent powder.
本發明更提供一種發光二極體元件之封裝方法,該封裝方法係於設置螢光片之前,事先形成一包覆發光二極體晶粒的透光膠材,以避免螢光片直接地接觸發光二極體晶粒。The invention further provides a method for packaging a light-emitting diode component, which is formed by previously forming a light-transmitting adhesive material covering the light-emitting diode crystal grains before the fluorescent sheet is disposed, so as to avoid direct contact of the fluorescent film. Light-emitting diode grains.
為達上述目的,本發明提供一種發光二極體元件,該發光二極體元件包含一基板、一發光二極體晶粒、一透光膠材及一螢光片;該基板之一上表面具有一擋牆部,該發光二極體晶粒設置於該上表面並位於該擋牆部所圍繞的範圍內部,該透光膠材包覆該發光二極體晶粒,該螢光片位於該擋牆部及該透光膠材上。In order to achieve the above object, the present invention provides a light emitting diode device, the light emitting diode device comprising a substrate, a light emitting diode die, a light transmissive material, and a phosphor; an upper surface of the substrate The light-emitting diode is disposed on the upper surface and is located inside the range surrounded by the retaining wall portion, and the transparent adhesive material covers the light-emitting diode die, and the fluorescent film is located The retaining wall portion and the transparent adhesive material.
本發明更提供一種發光二極體元件之封裝方法,該封裝方法包含a)提供一基板,該基板之一上表面形成有一擋牆部;b)設置一發光二極體晶粒於該基板上;c)設置一透光膠材於該擋牆部內並包覆該發光二極體晶粒;d)設置一螢光片於該透光膠材上。The invention further provides a method for packaging a light-emitting diode component, the package method comprising: a) providing a substrate, a barrier portion is formed on an upper surface of the substrate; b) providing a light-emitting diode die on the substrate ; c) providing a light-transmissive glue material in the retaining wall portion and covering the light-emitting diode die; d) providing a fluorescent sheet on the light-transmitting adhesive.
本發明之發光二極體元件係將該螢光片設置於一包覆該發光二極體晶粒之透光膠材上,如此一來,可以避免習知將螢光粉沉澱而產生之混光不均及色溫不均勻的問題;並且,可避免螢光片直接地接觸發光二極體晶粒點亮時產生的高溫而加速老化的情形。The light-emitting diode component of the present invention is arranged on the light-transmitting adhesive material covering the crystal grain of the light-emitting diode, so that the mixing of the fluorescent powder can be avoided. The problem of uneven light and uneven color temperature; and, in the case where the fluorescent sheet directly contacts the high temperature generated when the light-emitting diode crystal is lit, the aging is accelerated.
配合參閱第一圖A至第一圖E,為本發明第一實施例之發光二極體元件之封裝方法之封裝流程剖視圖。如第一圖A所示,首先提供一基板110,該基板110可以為陶瓷基板、鋁基板或銅基板等具有良好導熱或散熱效果的板材。該基板110之一上表面112形成一呈環狀的擋牆部114,該擋牆部114具有一預設高度h。於本實施例中,該擋牆部114及該基板110都是使用陶瓷材料製作而成,實際實施時,該擋牆部114及該基板110也可以使用不相同的材料製作而成。FIG. 1 is a cross-sectional view showing a packaging process of a method for packaging a light-emitting diode element according to a first embodiment of the present invention. As shown in FIG. A, a substrate 110 is first provided. The substrate 110 may be a ceramic substrate, an aluminum substrate, or a copper substrate, which has good heat conduction or heat dissipation effects. One of the upper surfaces 112 of the substrate 110 forms an annular wall portion 114 having a predetermined height h. In the present embodiment, the retaining wall portion 114 and the substrate 110 are both made of a ceramic material. In actual implementation, the retaining wall portion 114 and the substrate 110 may be made of different materials.
接著,設置一電路層120於該上表面112,該電路層120係使用具有良好導電性質的材料製作而成。於本實施例中,該電路層120可以,但不限制於是使用銅鍍鎳銀或銅鍍鎳金製作而成。Next, a circuit layer 120 is disposed on the upper surface 112, and the circuit layer 120 is fabricated using a material having good electrical conductivity. In the present embodiment, the circuit layer 120 can be made of, but not limited to, copper-plated silver or copper-plated nickel.
最後,設置一發光二極體晶粒130於該電路層120上。該發光二極體晶粒120設置於該擋牆部114所圍繞的範圍內部,並與該電路層120形成電性連接。該發光二極體晶粒130可以使用銀膠固晶、共晶(eutectic)焊接或覆晶(flip chip)焊接等方式設置於該電路層120上,並與該電路層120形成電性連接。當然,該發光二極體晶粒130也可以通過至少一焊線(未圖示)以與該電路層120形成電性連接。此外,於本實施例中,該發光二極體晶粒130的整體高度不高於該擋牆部114之該預設高度h。Finally, a light emitting diode die 130 is disposed on the circuit layer 120. The LED die 120 is disposed inside the range surrounded by the retaining wall portion 114 and electrically connected to the circuit layer 120. The LED die 130 may be disposed on the circuit layer 120 by silver paste, eutectic soldering, or flip chip soldering, and electrically connected to the circuit layer 120. Of course, the LED die 130 can also be electrically connected to the circuit layer 120 through at least one bonding wire (not shown). In addition, in the embodiment, the overall height of the LED die 130 is not higher than the preset height h of the retaining wall portion 114.
如第一圖B所示,設置一透光膠材140於該擋牆部114所圍繞的範圍內部,該透光膠材140係包覆該發光二極體晶粒120。該擋牆部114主要用以提供限位效果,避免該透光膠材140溢出。於本實施例中,該透光膠材140的設置高度大致等於該擋牆部114的之該預設高度h,意即該透光膠材140的設置高度不高於該擋牆部114之該預設高度h。該透光膠材140可以為環氧樹脂(epoxy)、矽樹脂(silicone resin)、壓克力樹脂(acrylic resin)或其它具有良好透光性質及絕緣效果的膠體。As shown in FIG. 24B, a light-transmitting adhesive material 140 is disposed inside the range surrounded by the retaining wall portion 114, and the light-transmitting adhesive material 140 covers the light-emitting diode die 120. The retaining wall portion 114 is mainly used to provide a limiting effect to prevent the transparent adhesive material 140 from overflowing. In this embodiment, the height of the light-transmitting adhesive 140 is substantially equal to the predetermined height h of the retaining wall portion 114, that is, the height of the transparent adhesive 140 is not higher than the retaining wall portion 114. The preset height h. The light transmissive adhesive 140 may be an epoxy, a silicone resin, an acrylic resin or other colloid having good light transmission properties and an insulating effect.
如第一圖C所示,設置一螢光片150設置於該擋牆部114及該透光膠材140上。該螢光片150係可由透光材料混合螢光粉,通過乾壓法、單向凝固法、射出成型法、刮刀成型或擠出成型法等方式形成之薄片狀螢光體。由該發光二極體晶粒130發出的部分光線在通過該螢光片150時,會與該螢光片150上的螢光粉體發光波長轉換使產生一波長轉換光線;該波長轉換光線係與該發光二極體晶粒130發出的其它部分光線混光後產生一需求光線。As shown in FIG. C, a fluorescent sheet 150 is disposed on the retaining wall portion 114 and the transparent adhesive material 140. The fluorescent sheet 150 is a sheet-like phosphor formed by mixing a phosphor with a light-transmitting material and by a dry pressing method, a unidirectional solidification method, an injection molding method, a doctor blade molding method, or an extrusion molding method. A portion of the light emitted by the light-emitting diode die 130 is converted into a wavelength-converted light by a wavelength conversion of the phosphor powder on the phosphor plate 150 when passing through the phosphor sheet 150; the wavelength-converted light system A desired light is generated by mixing with other portions of the light emitted by the LED die 130.
如第一圖D,形成一封裝體160包覆該基板110、該電路層120及該螢光片150。該封裝體160可以使用矽樹脂或其它具有良好透光性質的膠體,利用模具成型等方式形成一大致呈半球狀的外型,藉以提高該發光二極體元件的取光效率。於實際實施時,可以實施要求及限制加以調整該封裝體160的成型形狀,藉以達到所需求的光型輸出。As shown in FIG. D, a package 160 is formed to cover the substrate 110, the circuit layer 120, and the fluorescent sheet 150. The package body 160 can be formed into a substantially hemispherical shape by using a resin or other colloid having good light transmission properties, thereby improving the light extraction efficiency of the light emitting diode element. In actual implementation, the shape and shape of the package 160 can be adjusted to meet the required optical output.
是故,第一圖E所示便是本發明第一實施例所提出之發光二極體元件。同時配合參閱第二圖及第三圖,第二圖及第三圖為本發明第一實施例之發光二極體元件之立體分解圖及立體組合圖。該發光二極體元件包含一基板110、一電路層120、一發光二極體晶粒130、一透光膠材140、一螢光片150及一封裝體160。Therefore, the first LED E shows the light-emitting diode element proposed in the first embodiment of the present invention. Referring to the second and third figures, the second and third figures are an exploded perspective view and a perspective view of the LED component of the first embodiment of the present invention. The LED component includes a substrate 110, a circuit layer 120, a light emitting diode die 130, a light transmissive material 140, a phosphor sheet 150, and a package body 160.
該基板110之該上表面112形成有該擋牆部114,如第二圖所示,本實施例之擋牆部114大致呈D形地位於該基板110之該上表面112,並且,該擋牆部114可以直接地形成於該基板110之該上表面112,或者該擋牆部114也可以利用與該基板110相異的材質製作而成,並通過黏著劑使結合於該基板110之該上表面112。該擋牆部114具有該預設高度h。The upper surface 112 of the substrate 110 is formed with the retaining wall portion 114. As shown in the second figure, the retaining wall portion 114 of the present embodiment is substantially D-shaped on the upper surface 112 of the substrate 110, and the block The wall portion 114 may be directly formed on the upper surface 112 of the substrate 110, or the barrier portion 114 may be made of a material different from the substrate 110, and bonded to the substrate 110 by an adhesive. Upper surface 112. The retaining wall portion 114 has the predetermined height h.
該電路層120設置於該基板110之該上表面112。於本實施例中,該電路層120同時形成於該擋牆部114所包圍的區域範圍內及該擋牆部114所包圍的區域範圍外,實際實施時,可依實際要求及限制加以調整該電路層120的設置位置。該電路層120是使用銅鍍鎳銀、銅鍍鎳金等具有良好導電性質的材料製作而成。The circuit layer 120 is disposed on the upper surface 112 of the substrate 110. In this embodiment, the circuit layer 120 is formed in the region enclosed by the retaining wall portion 114 and outside the region surrounded by the retaining wall portion 114. In actual implementation, the circuit layer 120 can be adjusted according to actual requirements and restrictions. The set position of the circuit layer 120. The circuit layer 120 is made of a material having good electrical conductivity such as copper-nickel silver or copper-nickel-gold.
該發光二極體晶粒130設置於該基板110之該上表面112,並位於該擋牆部114所包圍的區域範圍內。其次,該發光二極體晶粒130電連接於該電路層120;該發光二極體晶粒130可以為覆晶形式之發光二極體晶粒,並以覆晶安裝方式電連接於該電路層120,或者該發光二極體晶粒130也可以為水平(horizontal)電極或垂直(vertical)電極形式之發光二極體晶粒,並通過至少一焊線(未圖示)電連接於該電路層120。The light emitting diode die 130 is disposed on the upper surface 112 of the substrate 110 and is located within a region surrounded by the retaining wall portion 114. Next, the LED die 130 is electrically connected to the circuit layer 120; the LED die 130 may be a flip-chip form of a light-emitting diode die and electrically connected to the circuit in a flip chip mounting manner. The layer 120, or the LED die 130, may also be a light-emitting diode die in the form of a horizontal electrode or a vertical electrode, and electrically connected to the wire by at least one bonding wire (not shown). Circuit layer 120.
該透光膠材140設置於該擋牆部114所包圍的區域範圍內,並包覆該發光二極體晶粒130,且該透光膠材140的設置高度係小於該擋牆部114之該預設高度h。該透光膠材140為具有良好透光性質及高絕緣效果之膠體,例如:環氧樹脂、矽樹脂或壓克力樹脂。The light-transmitting adhesive material 140 is disposed in a region surrounded by the retaining wall portion 114 and covers the light-emitting diode die 130, and the light-transmitting adhesive material 140 is disposed at a height smaller than the retaining wall portion 114. The preset height h. The light-transmitting adhesive 140 is a colloid having good light transmission properties and high insulation effect, such as epoxy resin, enamel resin or acrylic resin.
該螢光片150設置為該擋牆部114及該透光膠材140上,使該發光二極體晶粒130及該透光膠材140位於該基板110及該螢光片150之間。該螢光片150用以與該發光二極體晶粒130發出的部分光線發生波長轉換並產生一波長轉換光線。於本實施例中,該螢光片150的外型大致呈D形,且對位地設置於該擋牆部114上。The illuminating sheet 150 is disposed on the damper portion 114 and the transparent varnish 140 so that the illuminating diode die 130 and the transparent varnish 140 are located between the substrate 110 and the luminescent sheet 150. The phosphor sheet 150 is used for wavelength conversion with a portion of the light emitted by the LED die 130 and generates a wavelength converted light. In the embodiment, the fluorescent sheet 150 has a substantially D shape and is disposed on the retaining wall portion 114 in alignment.
該封裝體160包覆該基板110之該上表面112、該電路層120及該螢光片150,並形成一大致呈凸弧狀的出光面162,藉以提高該發光二極體元件的取光效率。該封裝體160是使用具有良好透光性質及高絕緣效果的膠體,例如:矽樹脂,通過模具成型等方式形成。The package body 160 covers the upper surface 112 of the substrate 110, the circuit layer 120 and the phosphor sheet 150, and forms a substantially convex arc-shaped light-emitting surface 162, thereby improving the light-collecting of the light-emitting diode element. effectiveness. The package body 160 is formed by using a colloid having a good light transmission property and a high insulation effect, for example, a resin, by molding or the like.
綜上所述,本發明之發光二極體元件係將該螢光片150設置於一包覆該發光二極體晶粒130之透光膠材140上,如此一來,可以避免習知將螢光粉沉澱而產生之混光不均及色溫不均勻的問題;並且,可避免螢光片150直接地接觸發光二極體晶粒130點亮時產生的高溫而加速老化的情形。In summary, the light-emitting diode device of the present invention is disposed on the light-transmitting adhesive material 140 covering the light-emitting diode die 130, so that the conventional The problem of uneven light mixing and uneven color temperature caused by precipitation of the phosphor powder; and the fact that the fluorescent sheet 150 directly contacts the high temperature generated when the light-emitting diode crystal 130 is lit and accelerates aging can be avoided.
配合參閱第四圖及第五圖,分別為本發明第二實施例之發光二極體元件之分解剖視圖及組合剖視圖。該發光二極體元件包含一基板210、一電路層220、一發光二極體晶粒230、一透光膠材240、一螢光片250及一封裝體260。4 and 5 are respectively an exploded cross-sectional view and a combined cross-sectional view of a light-emitting diode element according to a second embodiment of the present invention. The LED device includes a substrate 210, a circuit layer 220, a light emitting diode die 230, a light transmissive material 240, a phosphor sheet 250, and a package 260.
該基板210之一上表面212具有一呈環形之擋牆部214;於本實施例中,該擋牆部214與該基板210是一體成型的,實際實施時,該擋牆部214可以使用與該基板210相異的材料製作而成,並通過黏著劑結合於該基板210之該上表面212。該擋牆部214具有一預設高度h。The upper surface 212 of the substrate 210 has a ring-shaped retaining wall portion 214. In the embodiment, the retaining wall portion 214 and the substrate 210 are integrally formed. In actual implementation, the retaining wall portion 214 can be used. The substrate 210 is made of a different material and bonded to the upper surface 212 of the substrate 210 by an adhesive. The retaining wall portion 214 has a predetermined height h.
該電路層220位於該上表面212,該電路層221是使用具有導電性質的材料,例如:金屬,製作而成。於本實施例中,該電路層220同時地設置於該擋牆部214兩側之該基板210之該上表面212,實際實施時則不以此為限。The circuit layer 220 is located on the upper surface 212, and the circuit layer 221 is fabricated using a material having electrical conductivity, such as metal. In this embodiment, the circuit layer 220 is disposed on the upper surface 212 of the substrate 210 on both sides of the retaining wall portion 214. The actual implementation is not limited thereto.
該發光二極體晶粒230設置於該上表面212,並電連接於該電路層220。於本實施例中,該發光二極體晶粒230的高度係大於該擋牆部214之該預設高度h。該發光二極體晶粒230可以使用銀膠固晶、共晶焊接或覆晶焊接等方式設置於該電路層220上,並與該電路層220形成電性連接。The LED die 230 is disposed on the upper surface 212 and electrically connected to the circuit layer 220. In this embodiment, the height of the LED die 230 is greater than the predetermined height h of the retaining wall portion 214. The LED die 230 can be disposed on the circuit layer 220 by using silver paste, eutectic soldering or flip chip soldering, and is electrically connected to the circuit layer 220.
該透光膠材240包覆該發光二極體晶粒230,該透光膠材240為具有良好透光性質及絕緣效果的膠體,可供發光二極體晶粒230發出的光線通過。於本實施例中,該透光膠材240的設置高度大於該擋牆部214之該預設高度h。The light-transmitting adhesive material 240 covers the light-emitting diode die 230. The light-transmitting adhesive material 240 is a colloid having a good light-transmitting property and an insulating effect, and the light emitted by the light-emitting diode die 230 can pass. In the embodiment, the light-transmitting adhesive 240 is disposed at a height greater than the predetermined height h of the retaining wall portion 214.
該螢光片250之一下表面252具有一凸出部254,該螢光片250之該下表面252係貼合於該透光膠材240,並且該凸出部254係抵接於該擋牆部214,使該透光膠材240位於該基板210及該螢光片250之間並包覆該發光二極體晶粒230。該螢光片250係與該發光二極體晶粒230發出的部分光線發生波長轉換並產生一波長轉換光線,該波長轉換光線係與該發光二極體晶粒230發出的其它部分光線混光後產生一需求光線。The lower surface 252 of the fluorescent sheet 250 has a protruding portion 254. The lower surface 252 of the fluorescent sheet 250 is attached to the transparent adhesive material 240, and the protruding portion 254 is abutted against the retaining wall. The portion 214 is disposed between the substrate 210 and the fluorescent sheet 250 and covers the light emitting diode die 230. The phosphor sheet 250 is wavelength-converted with a portion of the light emitted by the light-emitting diode die 230 to generate a wavelength-converted light that is mixed with other portions of the light emitted by the light-emitting diode die 230. After generating a demand light.
該封裝體260包覆該基板210之該上表面212、該電路層220及該螢光片250,並形成一大致呈凸弧狀的出光面262,該出光面262可以有效地提高取光效率及出光角度。The package body 260 covers the upper surface 212 of the substrate 210, the circuit layer 220, and the phosphor sheet 250, and forms a substantially convex arc-shaped light-emitting surface 262. The light-emitting surface 262 can effectively improve light extraction efficiency. And the angle of light.
於實際製作該發光二極體元件時,首先必須提供該基板210,並於該基板210之該上表面212形成該擋牆部214。其次,設置該電路層220於該上表面212。接著,將該發光二極體晶粒230設置於該電路層220上,並與該電路層220形成電性連接。之後,設置該透光膠材240於該擋牆部214所包圍的區域內,並包覆該發光二極體晶粒230。然後,設置該螢光片250於該透光膠材240上,該螢光片250之該下表面252具有該凸出部254,該凸出部254抵頂於該擋牆部214,並使該透光膠材240及該發光二極體晶粒230位於該基板210及該螢光片250之間。最後,形成該封裝體260包覆該基板210之該上表面212、該電路層220及該螢光片250。When the LED component is actually fabricated, the substrate 210 must first be provided, and the barrier portion 214 is formed on the upper surface 212 of the substrate 210. Next, the circuit layer 220 is disposed on the upper surface 212. Then, the LED die 230 is disposed on the circuit layer 220 and electrically connected to the circuit layer 220. Thereafter, the light-transmitting adhesive 240 is disposed in a region surrounded by the retaining wall portion 214 and covers the light-emitting diode die 230. Then, the fluorescent sheet 250 is disposed on the transparent adhesive material 240. The lower surface 252 of the fluorescent sheet 250 has the protruding portion 254. The protruding portion 254 abuts against the retaining wall portion 214 and enables The light-transmitting adhesive 240 and the light-emitting diode die 230 are located between the substrate 210 and the fluorescent sheet 250. Finally, the package body 260 is formed to cover the upper surface 212 of the substrate 210, the circuit layer 220 and the fluorescent sheet 250.
綜合以上所述,本發明之發光二極體元件係將該螢光片250設置於一包覆該發光二極體晶粒230之透光膠材240上,如此一來,可以避免習知將螢光粉沉澱而產生之混光不均及色溫不均勻的問題;並且,可避免螢光片250直接地接觸發光二極體晶粒230點亮時產生的高溫而加速老化的情形。In summary, the light-emitting diode device of the present invention is disposed on the light-transmitting adhesive material 240 covering the light-emitting diode die 230, so that the conventional The problem of uneven light mixing and uneven color temperature caused by precipitation of the phosphor powder; and the fact that the fluorescent sheet 250 directly contacts the high temperature generated when the light-emitting diode crystal 230 is turned on and accelerates aging can be avoided.
然以上所述者,僅為本發明之較佳實施例,當不能限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍意圖保護之範疇。However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent changes and modifications made by the scope of the present invention should still be covered by the patent of the present invention. The scope of the scope is intended to protect.
110、210...基板110, 210. . . Substrate
112、212...上表面112, 212. . . Upper surface
114、214...擋牆部114,214. . . Retaining wall
120、220...電路層120, 220. . . Circuit layer
130、230...發光二極體晶粒130, 230. . . Light-emitting diode grain
140、240...透光膠材140, 240. . . Light-transmissive glue
150、250...螢光片150, 250. . . Fluorescent film
160、260...封裝體160, 260. . . Package
162、262...出光面162, 262. . . Glossy surface
252...下表面252. . . lower surface
254...凸出部254. . . Protrusion
第一圖A至第一圖E為本發明第一實施例之發光二極體元件之封裝方法之封裝流程剖視圖。1A to 1D are cross-sectional views showing a packaging process of a method of packaging a light-emitting diode element according to a first embodiment of the present invention.
第二圖為本發明第一實施例之發光二極體元件之立體分解圖。The second figure is an exploded perspective view of a light emitting diode element according to a first embodiment of the present invention.
第三圖為本發明第一實施例之發光二極體元件之立體組合圖。The third figure is a perspective assembled view of the light emitting diode element of the first embodiment of the present invention.
第四圖為本發明第二實施例之發光二極體元件之分解剖視圖。The fourth figure is an exploded cross-sectional view of a light-emitting diode element of a second embodiment of the present invention.
第五圖為本發明第二實施例之發光二極體元件之組合剖視圖。Fig. 5 is a sectional view showing the combination of the light-emitting diode elements of the second embodiment of the present invention.
110...基板110. . . Substrate
112...上表面112. . . Upper surface
114...擋牆部114. . . Retaining wall
120...電路層120. . . Circuit layer
130...發光二極體晶粒130. . . Light-emitting diode grain
140...透光膠材140. . . Light-transmissive glue
150...螢光片150. . . Fluorescent film
160...封裝體160. . . Package
162...出光面162. . . Glossy surface
Claims (12)
一基板,該基板之一上表面具有一擋牆部;
一發光二極體晶粒,設置於該上表面並位於該擋牆部所圍繞的範圍內部;
一透光膠材,包覆該發光二極體晶粒;
一螢光片,位於該擋牆部及該透光膠材上,使該發光二極體晶粒及該透光膠材位於該基板及該螢光片之間。A light emitting diode element comprising:
a substrate having an upper wall surface having a retaining wall portion;
a light emitting diode die disposed on the upper surface and located inside a range surrounded by the retaining wall portion;
a light-transmitting rubber material covering the light-emitting diode crystal grains;
A phosphor sheet is disposed on the retaining wall portion and the transparent adhesive material such that the light emitting diode die and the transparent adhesive material are located between the substrate and the fluorescent sheet.
a)提供一基板,該基板之一上表面形成有一擋牆部;
b)設置一發光二極體晶粒於該基板上;
c)設置一透光膠材於該擋牆部所圍繞的範圍內部並包覆該發光二極體晶粒;
d)設置一螢光片於該透光膠材上;A method for packaging a light emitting diode component, comprising:
a) providing a substrate, one of the upper surface of the substrate is formed with a retaining wall portion;
b) disposing a light emitting diode die on the substrate;
c) disposing a light-transmitting adhesive material inside the range surrounded by the retaining wall portion and covering the light-emitting diode die;
d) setting a fluorescent sheet on the transparent adhesive material;
形成一電路層於該上表面。The method for packaging a light-emitting diode according to claim 8 of the patent application, after the step a, further comprises:
A circuit layer is formed on the upper surface.
e)形成一封裝體,該封裝體包覆該基板之該上表面及該螢光片。The method for packaging a light-emitting diode according to claim 9 of the patent application, after the step d, further comprises a step:
e) forming a package covering the upper surface of the substrate and the phosphor sheet.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101123793A TW201403870A (en) | 2012-07-02 | 2012-07-02 | Light emitting diode element and manufacturing mathod thereof |
CN2013101593739A CN103296178A (en) | 2012-07-02 | 2013-05-02 | Light emitting diode assembly and packaging method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101123793A TW201403870A (en) | 2012-07-02 | 2012-07-02 | Light emitting diode element and manufacturing mathod thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201403870A true TW201403870A (en) | 2014-01-16 |
Family
ID=49096756
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101123793A TW201403870A (en) | 2012-07-02 | 2012-07-02 | Light emitting diode element and manufacturing mathod thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103296178A (en) |
TW (1) | TW201403870A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104976526A (en) * | 2014-04-03 | 2015-10-14 | 弘凯光电(深圳)有限公司 | LED light emitting device and lamp with LED light emitting device |
CN105280758A (en) * | 2014-06-18 | 2016-01-27 | 葳天科技股份有限公司 | Packaging structure of light emitting diode module and manufacturing method thereof |
CN112599650B (en) * | 2020-10-15 | 2022-05-10 | 泉州三安半导体科技有限公司 | light-emitting device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110176301A1 (en) * | 2010-01-21 | 2011-07-21 | Dsem Holdings Sdn. Bhd. | Method to produce homogeneous light output by shaping the light conversion material in multichip module |
TWI400823B (en) * | 2010-08-04 | 2013-07-01 | Advanced Optoelectronic Tech | Led package and method for manufacturing the same |
KR101114197B1 (en) * | 2010-08-09 | 2012-02-22 | 엘지이노텍 주식회사 | Light emitting device and lighting system having same |
-
2012
- 2012-07-02 TW TW101123793A patent/TW201403870A/en unknown
-
2013
- 2013-05-02 CN CN2013101593739A patent/CN103296178A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN103296178A (en) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4747726B2 (en) | Light emitting device | |
TWI487148B (en) | Illuminating device package | |
US8562161B2 (en) | LED based pedestal-type lighting structure | |
US9420642B2 (en) | Light emitting apparatus and lighting apparatus | |
US10032754B2 (en) | Light-emitting apparatus and illumination apparatus | |
TWI606616B (en) | Illuminating device package | |
WO2007004572A1 (en) | Light emitting device | |
US9966509B2 (en) | Light emitting apparatus and lighting apparatus | |
JP2005243973A (en) | Light emitting device and lighting device | |
TW200423431A (en) | Semiconductor light-emitting device | |
CN103579466A (en) | Light emitting device | |
JP2006237264A (en) | Light emitting device and lighting device | |
JP2016171147A (en) | Light emission device and luminaire | |
JP2007294890A (en) | Light emitting device | |
JP2014082481A (en) | Light-emitting device | |
KR20170043126A (en) | High power led package and method of the same improved color coordinates and thermal conductivity | |
CN102082223B (en) | Light emitting device package | |
KR20140004351A (en) | Light emitting diode package | |
TW201403870A (en) | Light emitting diode element and manufacturing mathod thereof | |
JP2011159813A (en) | Light-emitting device | |
KR100634305B1 (en) | Light emitting diodes and method for manufacturing same | |
KR101916137B1 (en) | Light emitting device package | |
US9761766B2 (en) | Chip on board type LED module | |
JP2009130298A (en) | Light emitting device | |
CN105845804B (en) | Light emitting diode device and light emitting device using same |