JPS6433531A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6433531A
JPS6433531A JP62190646A JP19064687A JPS6433531A JP S6433531 A JPS6433531 A JP S6433531A JP 62190646 A JP62190646 A JP 62190646A JP 19064687 A JP19064687 A JP 19064687A JP S6433531 A JPS6433531 A JP S6433531A
Authority
JP
Japan
Prior art keywords
semiconductor layer
main plane
light transmittable
insulating films
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62190646A
Other languages
Japanese (ja)
Inventor
Tomotaka Matsumoto
Satoru Kawai
Yasuhiro Nasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62190646A priority Critical patent/JPS6433531A/en
Publication of JPS6433531A publication Critical patent/JPS6433531A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To obtain a good display characteristic even during photoirradiation by providing multi-layered films formed with 1st and 2nd light transmittable insulating films, the resonance wavelengths of both of which are the wavelength of the luminous rays of a mercury lamp, on the main plane of an working semiconductor layer. CONSTITUTION:The working semiconductor layer 1 has a gate insulating film 6 and a gate electrode 5 formed via the gate insulting film on one main plane of said layer. The multi-layered films 4 laminated with >=1 layers of both the 1st light transmittable insulating films 2 and the 2nd light transmittable insulating films 3 constituted in such a manner that the resonance wavelengths thereof are 436nm wavelength of the luminous rays of the mercury lamp are provided on the other main plane of the working semiconductor layer 1 in the position opposite to the gate electrode 5. Photocurrent at the time of off is thereby decrease by >=1 digits and the good display characteristic is obtd. even during the photoirradiation.
JP62190646A 1987-07-29 1987-07-29 Thin film transistor Pending JPS6433531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62190646A JPS6433531A (en) 1987-07-29 1987-07-29 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62190646A JPS6433531A (en) 1987-07-29 1987-07-29 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6433531A true JPS6433531A (en) 1989-02-03

Family

ID=16261540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62190646A Pending JPS6433531A (en) 1987-07-29 1987-07-29 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6433531A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012063436A1 (en) * 2010-11-10 2012-05-18 シャープ株式会社 Substrate for display device, method for producing same, and display device
KR20180031945A (en) * 2016-09-21 2018-03-29 고려대학교 산학협력단 Thin film transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012063436A1 (en) * 2010-11-10 2012-05-18 シャープ株式会社 Substrate for display device, method for producing same, and display device
CN103210494A (en) * 2010-11-10 2013-07-17 夏普株式会社 Substrate for display device, method for producing same, and display device
US9239484B2 (en) 2010-11-10 2016-01-19 Sharp Kabushiki Kaisha Display device substrate and method for fabricating same, and display device
KR20180031945A (en) * 2016-09-21 2018-03-29 고려대학교 산학협력단 Thin film transistor

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