JPS5791575A - Semiconductor luminous element and manufacture therefor - Google Patents

Semiconductor luminous element and manufacture therefor

Info

Publication number
JPS5791575A
JPS5791575A JP16931780A JP16931780A JPS5791575A JP S5791575 A JPS5791575 A JP S5791575A JP 16931780 A JP16931780 A JP 16931780A JP 16931780 A JP16931780 A JP 16931780A JP S5791575 A JPS5791575 A JP S5791575A
Authority
JP
Japan
Prior art keywords
layer
luminous
semiconductor layer
type semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16931780A
Other languages
Japanese (ja)
Other versions
JPS6347152B2 (en
Inventor
Tadaaki Inoue
Koji Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16931780A priority Critical patent/JPS5791575A/en
Publication of JPS5791575A publication Critical patent/JPS5791575A/en
Publication of JPS6347152B2 publication Critical patent/JPS6347152B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase external quantum efficiency, by a method wherein the light emitting layer and the specular surface of a surface luminous-type light emitting diode are provided with curvature and the specular surface is made a concave mirror against radiation light to prevent the light radiated from the luminous layer from propagating over a long range in the luminous layer serving as an absorption layer. CONSTITUTION:A hole 2 with a predetermined diameter is formed at a GaAs substrate 1. The first P type semiconductor layer 3 serving as a carrier enclosure layer, the second P type semiconductor layer 4 as an active layer, and the third N type semiconductor layer 5 are a carrier enclosure layer are grown on the substrate 1. The first semiconductor layer 3 is exposed by removing the substrate 1. An insulating film 6 is spread on the layer 3 to open a window section to obtain a luminous region and an LED chip is made by forming a P type layer 7 and by providing with electrodes 8, 9. In this way, external quantum efficiency is increased while improving luminous efficiency.
JP16931780A 1980-11-28 1980-11-28 Semiconductor luminous element and manufacture therefor Granted JPS5791575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16931780A JPS5791575A (en) 1980-11-28 1980-11-28 Semiconductor luminous element and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16931780A JPS5791575A (en) 1980-11-28 1980-11-28 Semiconductor luminous element and manufacture therefor

Publications (2)

Publication Number Publication Date
JPS5791575A true JPS5791575A (en) 1982-06-07
JPS6347152B2 JPS6347152B2 (en) 1988-09-20

Family

ID=15884291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16931780A Granted JPS5791575A (en) 1980-11-28 1980-11-28 Semiconductor luminous element and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS5791575A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7154121B2 (en) * 2002-12-23 2006-12-26 Epistar Corporation Light emitting device with a micro-reflection structure carrier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7154121B2 (en) * 2002-12-23 2006-12-26 Epistar Corporation Light emitting device with a micro-reflection structure carrier

Also Published As

Publication number Publication date
JPS6347152B2 (en) 1988-09-20

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