JPS6486572A - Amorphous thin film light emitting element - Google Patents

Amorphous thin film light emitting element

Info

Publication number
JPS6486572A
JPS6486572A JP24521887A JP24521887A JPS6486572A JP S6486572 A JPS6486572 A JP S6486572A JP 24521887 A JP24521887 A JP 24521887A JP 24521887 A JP24521887 A JP 24521887A JP S6486572 A JPS6486572 A JP S6486572A
Authority
JP
Japan
Prior art keywords
layer
light emitting
type
sic
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24521887A
Other languages
Japanese (ja)
Inventor
Yukihiko Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP24521887A priority Critical patent/JPS6486572A/en
Publication of JPS6486572A publication Critical patent/JPS6486572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0012—Devices characterised by their operation having p-n or hi-lo junctions p-i-n devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To increase light emitting intensity by forming an light emitting layer portion, having a band gap smaller than that of a non-light emitting layer portion adjacent to each conductive layer, at that portion of an intrinsie semiconductor layer remote from first and second conductive layers that pinch the semiconductor layer. CONSTITUTION:An light emitting element L consists of a transparent conductive layer 2 formed on a glass substrate 1, a p-type a-SiC layer 3 and an Ag electrode 6a formed on the conductive layer 2, a light emitting i-type a-SiC layer 4, n-type a-SiC layer 5 and an Ag electrode 6b formed on the layer 3 in succession. The i-type a-SiC layer 4 includes a light emitting portion 4c formed between two adjacent non-light emitting layer portions 4a and 4b and provided with a band gap smaller than those of the other layer portions. Because the light emitting layer portion 4c has smaller band gap than the other layer portions 4a and 4b and is located close to the p-type a-SiC layer 3, light emitting intensity can be improved.
JP24521887A 1987-09-28 1987-09-28 Amorphous thin film light emitting element Pending JPS6486572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24521887A JPS6486572A (en) 1987-09-28 1987-09-28 Amorphous thin film light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24521887A JPS6486572A (en) 1987-09-28 1987-09-28 Amorphous thin film light emitting element

Publications (1)

Publication Number Publication Date
JPS6486572A true JPS6486572A (en) 1989-03-31

Family

ID=17130390

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24521887A Pending JPS6486572A (en) 1987-09-28 1987-09-28 Amorphous thin film light emitting element

Country Status (1)

Country Link
JP (1) JPS6486572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095591A1 (en) * 2003-04-23 2004-11-04 Hoya Corporation Light-emitting diode
WO2005086244A1 (en) * 2004-03-05 2005-09-15 Epivalley Co., Ltd. Iii -nitride semiconductor light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004095591A1 (en) * 2003-04-23 2004-11-04 Hoya Corporation Light-emitting diode
WO2005086244A1 (en) * 2004-03-05 2005-09-15 Epivalley Co., Ltd. Iii -nitride semiconductor light emitting device
US7432534B2 (en) 2004-03-05 2008-10-07 Epivalley Co., Ltd. III-nitride semiconductor light emitting device

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