JPH04225577A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPH04225577A JPH04225577A JP2408357A JP40835790A JPH04225577A JP H04225577 A JPH04225577 A JP H04225577A JP 2408357 A JP2408357 A JP 2408357A JP 40835790 A JP40835790 A JP 40835790A JP H04225577 A JPH04225577 A JP H04225577A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light emitting
- emitting diode
- region
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims description 27
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は発光ダイオード、特に表
面発光型の発光ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode, particularly a surface emitting type light emitting diode.
【０００２】0002
【従来の技術】複数のＰＮ接合発光ダイオードを基板上
に配設されて成る発光ダイオードアレイは各発光ダイオ
ードを電気的に制御することにより比較的容易に画像情
報などを処理する利点を有しており、このためその改良
と共に種々の応用が考えられている。2. Description of the Related Art A light emitting diode array consisting of a plurality of PN junction light emitting diodes arranged on a substrate has the advantage that image information can be processed relatively easily by electrically controlling each light emitting diode. Therefore, improvements and various applications are being considered.
【０００３】例えば、情報の出力機器としてのプリンタ
においては、より高速化高密度化が要求されており、こ
の要求を満足すべく発光ダイオードアレイを光源として
用いることが考えられている。For example, in a printer as an information output device, there is a demand for higher speed and higher density, and in order to satisfy this demand, it has been considered to use a light emitting diode array as a light source.
【０００４】すなわち、ノンインパクトな光学プリンタ
としては光源にレーザを用いたレーザプリンタ及び光源
に発光ダイオードアレイを用いたＬＥＤプリンタが知ら
れているが、レーザプリンタではレーザビームの走査に
回動可能なポリゴンミラーなどの機構とこれに対応した
複雑な光学系を必須とするのに対し、ＬＥＤプリンタで
は複数の発光ダイオードから成る発光ダイオードアレイ
の各発光ダイオードを電気的にオンオフ制御して駆動す
れば良く、このためレーザプリンタに比べて小型、高速
化かつ高信頼化が可能となっている。Namely, as non-impact optical printers, there are known laser printers that use a laser as a light source and LED printers that use a light emitting diode array as a light source. Whereas mechanisms such as polygon mirrors and corresponding complicated optical systems are required, LED printers can be driven by electrically controlling each light-emitting diode in a light-emitting diode array consisting of multiple light-emitting diodes. Therefore, compared to laser printers, they can be smaller, faster, and more reliable.
【０００５】図５に従来のＬＥＤプリンタ等に用いられ
る発光ダイオードの断面図を示す。図において、発光ダ
イオードはｎ−ＧａＡｓ基板１上にｎ−ＧａＡｓＰ層９
をＶＰＥ（Ｖａｐｏｒ Ｐｈａｓｅ Ｅｐｉｔａｘ
ｙ）法により積層し、さらにＳｉＮ膜５をマスクとして
Ｚｎ拡散を行い島状のＺｎ拡散領域８を形成することに
より構成され、ｎ−ＧａＡｓＰ層９とこのＺｎ拡散領域
８との界面がＰＮ接合面を形成して発光領域となる。FIG. 5 shows a cross-sectional view of a light emitting diode used in a conventional LED printer or the like. In the figure, the light emitting diode consists of an n-GaAsP layer 9 on an n-GaAs substrate 1.
VPE (Vapor Phase Epitax)
y) method, and then Zn is diffused using the SiN film 5 as a mask to form an island-shaped Zn diffusion region 8, and the interface between the n-GaAsP layer 9 and this Zn diffusion region 8 forms a PN junction. It forms a surface and becomes a light emitting region.
【０００６】そして、ｐ−電極６及びｎ−電極７をそれ
ぞれ形成し、両電極間に所定の電圧を印加することによ
りＰＮ接合面からの光が表面から出射される構成である
。The structure is such that a p-electrode 6 and an n-electrode 7 are formed respectively, and light from the PN junction surface is emitted from the surface by applying a predetermined voltage between the two electrodes.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、このよ
うな表面発光型発光ダイオードにおいては、ｐ−電極６
の下部は電流密度が一番高いため発光が最も多く生じて
いる場所であるが、ここから発した光はｐ−電極６によ
り反射されてしまうため外部に取り出されず、発光効率
が大きく低下してしまう問題があった。[Problems to be Solved by the Invention] However, in such a surface-emitting type light emitting diode, the p-electrode 6
The lower part of the electrode has the highest current density and is where the most light is emitted, but the light emitted from this area is reflected by the p-electrode 6 and is not taken out to the outside, resulting in a significant drop in luminous efficiency. There was a problem with it.
【０００８】本発明は上記従来の課題に鑑みなされたも
のであり、その目的は表面発光型発光ダイオードにおい
て、電極下部における発光を抑制し、外部への発光に有
効な領域のみに電流を注入することにより極めて高い発
光効率を有する発光ダイオードを提供することにある。The present invention was made in view of the above-mentioned conventional problems, and its purpose is to suppress light emission at the bottom of the electrode in a surface-emitting type light emitting diode, and to inject current only into the area where light emission to the outside is effective. In particular, it is an object of the present invention to provide a light emitting diode having extremely high luminous efficiency.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る発光ダイオードは基板上に形成される
Ｐ型あるいはＮ型半導体層と、この半導体層に形成され
る拡散領域と、前記拡散領域上に形成される電極と、を
有する発光ダイオードにおいて、前記電極下部に電流阻
止領域を有することを特徴とする。[Means for Solving the Problems] In order to achieve the above object, a light emitting diode according to the present invention includes a P-type or N-type semiconductor layer formed on a substrate, a diffusion region formed in this semiconductor layer, and an electrode formed on the diffusion region, characterized in that the light emitting diode has a current blocking region below the electrode.
【００１０】0010
【作用】本発明の発光ダイオードはこのような構成を有
しており、電極下部に形成された電流阻止領域により電
極下部における発光を防止し、発光に有効な拡散領域の
みに電流を注入して発光させることにより、電極での反
射を少なくし、発光効率の向上を図るものである。[Function] The light emitting diode of the present invention has such a structure, and the current blocking region formed at the bottom of the electrode prevents light emission at the bottom of the electrode, and current is injected only into the diffusion region that is effective for light emission. By emitting light, reflection at the electrodes is reduced and luminous efficiency is improved.
【００１１】[0011]
【実施例】以下、図面を用いながら本発明に係る発光ダ
イオードの好適な実施例を説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the light emitting diode according to the present invention will be described below with reference to the drawings.
【００１２】図１には第１実施例の発光ダイオードの断
面図が示されており、ｎ−ＧａＡｓ基板１上にｎ−Ａｌ
ＧａＡｓ層２、ｐ−ＡｌＧａＡｓ層３及びｎ−ＡｌＧａ
Ａｓ層４が順次ＭＢＥ法などにより積層される。次に、
ＳｉＮ膜５をマスクとしてＺｎ拡散を行い島状の拡散領
域８ａが分離形成され、さらに、再びＺｎ拡散を行い両
拡散領域８ａがＺｎ領域で接続される。なお、拡散領域
８ａはその深さがｐ−ＡｌＧａＡｓ層３に達するように
設定され、接続領域８ｂはその深さがａ−ＡｌＧａＡｓ
層４の層厚よりも小さく設定される。Ｚｎ拡散を行うに
は、ＳｉＮ膜５上に拡散源Ｚｎを含むＺｎ０膜等をスパ
ッターリング法等により形成し、６５０℃〜８００℃の
高温中に数時間放置してＺｎを熱拡散すれば良い。FIG. 1 shows a cross-sectional view of the light emitting diode of the first embodiment, in which n-Al is formed on an n-GaAs substrate 1.
GaAs layer 2, p-AlGaAs layer 3 and n-AlGa
As layers 4 are sequentially laminated by MBE method or the like. next,
Zn is diffused using the SiN film 5 as a mask to separate and form island-shaped diffusion regions 8a, and Zn is diffused again to connect both diffusion regions 8a with the Zn region. The depth of the diffusion region 8a is set to reach the p-AlGaAs layer 3, and the depth of the connection region 8b is set to reach the p-AlGaAs layer 3.
The layer thickness is set smaller than the layer thickness of layer 4. To perform Zn diffusion, it is sufficient to form a Zn0 film or the like containing a diffusion source Zn on the SiN film 5 by a sputtering method or the like, and leave it at a high temperature of 650° C. to 800° C. for several hours to thermally diffuse Zn. .
【００１３】そして、ｐ＋コンタクト層が拡散領域８ａ
、接続領域８ｂ上に積層された後ｐ−電極６が形成され
、さらにｎ−ＧａＡｓ基板１の下部にｎ−電極７が形成
され、本実施例の発光ダイオードが構成される。[0013] Then, the p+ contact layer is in the diffusion region 8a.
, a p-electrode 6 is formed on the connection region 8b, and an n-electrode 7 is further formed on the lower part of the n-GaAs substrate 1, thereby configuring the light emitting diode of this embodiment.
【００１４】ここで、ｐ−電極６とｎ−電極７間に電圧
を印加すると、ｐ−電極６の下部においては基板表面か
ら順にｐ＋ 、ｎ、ｐ、ｎ、ｎ型となり、逆バイアス構
造となるため電流が注入されずこの部分における発光を
抑えることができる。When a voltage is applied between the p-electrode 6 and the n-electrode 7, the lower part of the p-electrode 6 becomes p+, n, p, n, and n type in order from the substrate surface, resulting in a reverse bias structure. Therefore, no current is injected and light emission in this portion can be suppressed.
【００１５】一方、このｐ−電極６の下部以外の拡散領
域８ａにおいては、基板表面から順にｐ＋ 、ｐ、ｎ、
ｎ型となり、電流が基板表面のｐ＋ 層を通して拡散領
域８ａ全面に注入されるため、ｎ−ＡｌＧａＡｓ層２と
ｐ−ＡｌＧａＡｓ層３との界面に形成されたＰＮ接合面
において発光し、この光はｐ−電極６で反射されること
なく外部に取り出される。On the other hand, in the diffusion region 8a other than the lower part of the p- electrode 6, p+, p, n,
Since the current is injected into the entire diffusion region 8a through the p+ layer on the substrate surface, light is emitted at the PN junction formed at the interface between the n-AlGaAs layer 2 and the p-AlGaAs layer 3, and this light is It is taken out to the outside without being reflected by the p-electrode 6.
【００１６】このように、本第１実施例においてはｐ−
電極６の下部に逆バイアス構造を有する電流阻止領域を
形成することにより、電極下部からの発光を抑え、かつ
この電極下部以外の拡散領域から効率的に発光を行わせ
ることにより極めて発光効率の高い発光ダイオードを得
ることができる。In this way, in the first embodiment, p-
By forming a current blocking region with a reverse bias structure at the bottom of the electrode 6, light emission from the bottom of the electrode is suppressed, and light is efficiently emitted from a diffusion region other than the bottom of the electrode, resulting in extremely high light emission efficiency. A light emitting diode can be obtained.
【００１７】なお、本第１実施例においてｎ−ＡｌＧａ
Ａｓ層２、ｐ−ＡｌＧａＡｓ層３、ｎ−ＡｌＧａＡｓ層
４のＡｌ、Ｇａ、Ａｓの組成比を適当に選ぶことにより
（ｐ−ＡｌＧａＡｓ層３のＡｌの組成比を少なくする）
、ｎ−ＡｌＧａＡｓ層４のバンドギャップをｐ−ＡｌＧ
ａＡｓ３のバンドギャップよりも小さく設定することが
でき、このときＰＮ接合面において発した光はｎ−Ａｌ
ＧａＡｓ層４にて吸収されないため、外部発光効率をさ
らに高くすることができる。Note that in the first embodiment, n-AlGa
By appropriately selecting the composition ratios of Al, Ga, and As in the As layer 2, p-AlGaAs layer 3, and n-AlGaAs layer 4 (reducing the composition ratio of Al in the p-AlGaAs layer 3).
, the band gap of the n-AlGaAs layer 4 is set to p-AlG
The bandgap can be set smaller than that of aAs3, and at this time, the light emitted at the PN junction surface is
Since the light is not absorbed by the GaAs layer 4, the external light emission efficiency can be further increased.
【００１８】図２に本発明の第２実施例に係る発光ダイ
オードの断面図を示す。本第２実施例においては上記第
１実施例において示したように発光が起こるＰＮ接合面
が結晶成長により形成されるのではなく、熱拡散により
形成されるものである。すなわち、ｎ−ＧａＡｓ基板１
上にｎ−ＡｌＧａＡｓ層２、ｐ−ＡｌＧａＡｓ層３、ｎ
−ＡｌＧａＡｓ層４が順次積層され、ＳｉＮ膜５をマス
クとしてＺｎ拡散領域８ａがｎ−ＡｌＧａＡｓ層２に達
するまで形成される。その後、上記第１実施例と同様に
して接続領域８ｂが拡散により形成され、この接続領域
８ｂ上にｐ＋ コンタクト層を介してｐ−電極６及びｎ
−ＧａＡｓ基板１下部にｎ−電極７が形成される。FIG. 2 shows a cross-sectional view of a light emitting diode according to a second embodiment of the present invention. In the second embodiment, the PN junction surface where light emission occurs is not formed by crystal growth as shown in the first embodiment, but is formed by thermal diffusion. That is, the n-GaAs substrate 1
On top are an n-AlGaAs layer 2, a p-AlGaAs layer 3, and an n-AlGaAs layer 2.
-AlGaAs layers 4 are sequentially stacked, and Zn diffusion region 8a is formed using SiN film 5 as a mask until reaching n-AlGaAs layer 2. Thereafter, a connection region 8b is formed by diffusion in the same manner as in the first embodiment, and a p- electrode 6 and an n-electrode are formed on this connection region 8b via a p+ contact layer.
- An n- electrode 7 is formed under the GaAs substrate 1.
【００１９】本第２実施例においても、上記第１実施例
と同様にｐ−電極６下部にはｐ＋ 、ｎ、ｐ、ｎ、ｎ型
の逆バイアス構造を有する電流阻止領域が形成されてい
るためこの領域からは発光せず、拡散領域８ａとｎ−Ａ
ｌＧａＡｓ層２との界面に生じるじるＰＮ接合面にて発
光が行われ、ｐ−電極６にて反射されることなく外部に
取り出される。In the second embodiment, as in the first embodiment, a current blocking region having a p+, n, p, n, n type reverse bias structure is formed below the p- electrode 6. Therefore, no light is emitted from this region, and the diffusion region 8a and n-A
Light is emitted at the PN junction formed at the interface with the lGaAs layer 2, and is taken out to the outside without being reflected by the p-electrode 6.
【００２０】なお、本第２実施例においても上記第１実
施例と同様にｎ−ＡｌＧａＡｓ層４のバンドギャップを
小さく設定することにより光の吸収を抑えてより発光効
率を向上させることもできる。In the second embodiment, as in the first embodiment, the band gap of the n-AlGaAs layer 4 can be set small to suppress light absorption and improve the luminous efficiency.
【００２１】図３及び図４には本発明の第３実施例が示
されており、本第３実施例においては発光領域の外周に
電極を配置し、この発光領域に形成された拡散領域に電
極から電流を供給するものである。A third embodiment of the present invention is shown in FIGS. 3 and 4. In this third embodiment, an electrode is arranged around the outer periphery of the light emitting region, and a diffusion region formed in the light emitting region is provided with an electrode. Electric current is supplied from the electrodes.
【００２２】すなわち、図４に示されるように、ｎ−Ｇ
ａＡｓ基板１上にｎ−ＡｌＧａＡｓ層２、ｐ−ＡｌＧａ
Ａｓ層３、ｎ−ＡｌＧａＡｓ層４が順次積層され、Ｓｉ
Ｎ膜をマスクとして発光を得たい領域にＺｎ拡散領域８
ａを形成する。このとき、拡散領域８はｐ−ＡｌＧａＡ
ｓ層３に達するまで拡散される。そして、ＳｉＮ膜を除
去して接続領域８ｂを熱拡散により形成し、その後拡散
領域８ａを囲むようにｐ−電極６を形成する。That is, as shown in FIG.
n-AlGaAs layer 2 and p-AlGa on aAs substrate 1
An As layer 3 and an n-AlGaAs layer 4 are sequentially laminated, and the Si
Using the N film as a mask, place a Zn diffusion region 8 in the region where you want to obtain light emission.
form a. At this time, the diffusion region 8 is p-AlGaA
It is diffused until it reaches the S layer 3. Then, the SiN film is removed and the connection region 8b is formed by thermal diffusion, and then the p-electrode 6 is formed so as to surround the diffusion region 8a.
【００２３】そして、ｐ−電極６とｎ−電極７間に電圧
を印加すると、ｐ−電極６下部においては上記第１、第
２実施例と同様にして逆バイアス構造の電流阻止領域が
あるため発光は行われず、一方拡散領域８ａでは順バイ
アス構成でその全面に電流が注入されるため連続的な発
光パターンを得ることができる。When a voltage is applied between the p-electrode 6 and the n-electrode 7, there is a current blocking region with a reverse bias structure under the p-electrode 6, as in the first and second embodiments. No light is emitted, and on the other hand, current is injected into the entire surface of the diffusion region 8a in a forward bias configuration, so that a continuous light emission pattern can be obtained.
【００２４】なお、本第３実施例においてはｐ−電極６
と基板表面との接触面積を大きくとることができるため
、発光ダイオードのシリーズ抵抗を低下させることも可
能となっている。Note that in the third embodiment, the p-electrode 6
Since the contact area between the LED and the substrate surface can be increased, it is also possible to reduce the series resistance of the light emitting diode.
【００２５】[0025]
【発明の効果】以上説明したように、本発明に係る発光
ダイオードによれば、表面からの発光に有効な領域のみ
に電流を注入することが可能となり、極めて高い発光効
率を得ることができる。As explained above, according to the light emitting diode according to the present invention, it is possible to inject current only into the area effective for light emission from the surface, and extremely high light emitting efficiency can be obtained.
【図１】本発明に係る発光ダイオードの第１実施例の断
面図。FIG. 1 is a sectional view of a first embodiment of a light emitting diode according to the present invention.
【図２】本発明に係る発光ダイオードの第２実施例の断
面図。FIG. 2 is a sectional view of a second embodiment of a light emitting diode according to the present invention.
【図３】本発明に係る発光ダイオードの第３実施例の平
面図。FIG. 3 is a plan view of a third embodiment of a light emitting diode according to the present invention.
【図４】本発明に係る発光ダイオードの第３実施例の断
面図。FIG. 4 is a sectional view of a third embodiment of a light emitting diode according to the present invention.
【図５】従来の発光ダイオードの断面図。FIG. 5 is a cross-sectional view of a conventional light emitting diode.
１ ｎ−ＧａＡｓ基板 ２ ｎ−ＡｌＧａＡｓ層 ３ ｐ−ＡｌＧａＡｓ層 ４ ｎ−ＡｌＧａＡｓ層 ５ ＳｉＮ膜 ６ ｐ−電極 ７ ｎ−電極 ８ａ 拡散領域 ８ｂ 接続領域 1 n-GaAs substrate 2 n-AlGaAs layer 3 p-AlGaAs layer 4 n-AlGaAs layer 5 SiN film 6 p-electrode 7 N-electrode 8a Diffusion area 8b Connection area
Claims (1)
半導体層と、この半導体層に形成される拡散領域と、前
記拡散領域上に形成される電極と、を有する発光ダイオ
ードにおいて、前記電極下部に電流阻止領域を有するこ
とを特徴とする発光ダイオード。1. A light emitting diode comprising a P-type or N-type semiconductor layer formed on a substrate, a diffusion region formed in this semiconductor layer, and an electrode formed on the diffusion region, wherein the electrode A light emitting diode characterized by having a current blocking region at the bottom.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2408357A JPH04225577A (en) | 1990-12-27 | 1990-12-27 | Light emitting diode |
| US07/809,892 US5189496A (en) | 1990-12-27 | 1991-12-18 | Light-emitting diode with current-blocking |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2408357A JPH04225577A (en) | 1990-12-27 | 1990-12-27 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04225577A true JPH04225577A (en) | 1992-08-14 |
Family
ID=18517818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2408357A Pending JPH04225577A (en) | 1990-12-27 | 1990-12-27 | Light emitting diode |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5189496A (en) |
| JP (1) | JPH04225577A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135793A (en) * | 2008-02-28 | 2008-06-12 | Oki Electric Ind Co Ltd | Semiconductor light-emitting apparatus and led array |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251742A (en) * | 1992-03-04 | 1993-09-28 | Eastman Kodak Japan Kk | Light emitting device |
| US5600157A (en) * | 1993-04-28 | 1997-02-04 | Oki Electric Industry Co., Ltd. | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity |
| SE509809C2 (en) * | 1995-11-03 | 1999-03-08 | Mitel Semiconductor Ab | LED with divided light emitting area |
| JP3813010B2 (en) * | 1997-06-09 | 2006-08-23 | 沖電気工業株式会社 | Light emitting diode element and light emitting diode element array |
| JP3717284B2 (en) * | 1997-09-22 | 2005-11-16 | 沖電気工業株式会社 | LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ARRAY, AND LIGHT EMITTING ELEMENT MANUFACTURING METHOD |
| JP2000022206A (en) * | 1998-07-01 | 2000-01-21 | Oki Electric Ind Co Ltd | Semiconductor light emitting device |
| JP3986169B2 (en) * | 1998-07-09 | 2007-10-03 | 沖電気工業株式会社 | Semiconductor light emitting device |
| US6653662B2 (en) * | 2000-11-01 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same, and method for driving the same |
| JP2003188411A (en) * | 2001-12-20 | 2003-07-04 | Oki Degital Imaging:Kk | Light-emitting semiconductor device and manufacturing method thereof |
| DE102004037868A1 (en) * | 2004-04-30 | 2005-11-24 | Osram Opto Semiconductors Gmbh | A radiation emitting and / or receiving semiconductor device and method for patterning a contact on a semiconductor body |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57148383A (en) * | 1981-03-09 | 1982-09-13 | Nec Corp | Semiconductor light-emitting element |
| US4477824A (en) * | 1982-03-04 | 1984-10-16 | At&T Bell Laboratories | Light emitting device for optical switching |
| US4719497A (en) * | 1984-06-15 | 1988-01-12 | Hewlett-Packard Company | High efficiency light-emitting diode |
| JPS61220484A (en) * | 1985-03-27 | 1986-09-30 | Hitachi Ltd | Semiconductor light emitting device |
| JPH01137679A (en) * | 1987-11-24 | 1989-05-30 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
-
1990
- 1990-12-27 JP JP2408357A patent/JPH04225577A/en active Pending
-
1991
- 1991-12-18 US US07/809,892 patent/US5189496A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135793A (en) * | 2008-02-28 | 2008-06-12 | Oki Electric Ind Co Ltd | Semiconductor light-emitting apparatus and led array |
Also Published As
| Publication number | Publication date |
|---|---|
| US5189496A (en) | 1993-02-23 |
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