JPS57148383A - Semiconductor light-emitting element - Google Patents
Semiconductor light-emitting elementInfo
- Publication number
- JPS57148383A JPS57148383A JP3336181A JP3336181A JPS57148383A JP S57148383 A JPS57148383 A JP S57148383A JP 3336181 A JP3336181 A JP 3336181A JP 3336181 A JP3336181 A JP 3336181A JP S57148383 A JPS57148383 A JP S57148383A
- Authority
- JP
- Japan
- Prior art keywords
- light
- junction
- side face
- emitting element
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To sharply improve the visibility of the light-emitting section of the subject element by a method wherein at least the reverse side or the entire side face of the light-emitting element is roughened. CONSTITUTION:A diffusion blocking layer 3 is formed for selective diffusion on the compound semiconductor substrate whereon GaAsP 2 was grown in vapor- phase, and a P-N junction is obtained. Besides, a front electrode 5 is formed at a part on the P-side of the P-N junction, a rough gringing is performed on the substrate 1 side, and a back electrode 7 is formed on the whole surface. Subsequently, in the process wherein the above is divided into photoelectric elements, a roughened surface is formed on the whole side face and use it as a light absorbing layer 8. When the P-N junction 4 of the light-emitting element formed according to this constitution is conducted in the forward direction, the light emitted from the P-N junction makes its way to the reverse side or the entire side face as per the light passage 9 of the emitted light. However, light absorption is generated due to the irregular reflection of the layer 8 which was provided on the electrode 7 and the entire side face, and the most of the light is absorbed there, thereby enabling to greatly improve the visibility of the desire section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3336181A JPS57148383A (en) | 1981-03-09 | 1981-03-09 | Semiconductor light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3336181A JPS57148383A (en) | 1981-03-09 | 1981-03-09 | Semiconductor light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57148383A true JPS57148383A (en) | 1982-09-13 |
Family
ID=12384439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3336181A Pending JPS57148383A (en) | 1981-03-09 | 1981-03-09 | Semiconductor light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57148383A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6140067A (en) * | 1984-07-31 | 1986-02-26 | Sanyo Electric Co Ltd | Light emitting diode for optical printer |
| JPS6450481A (en) * | 1987-07-27 | 1989-02-27 | Ortel Corp | Super light emitting diode and single mode laser |
| US5189496A (en) * | 1990-12-27 | 1993-02-23 | Eastman Kodak Company | Light-emitting diode with current-blocking |
| JP2004221112A (en) * | 2003-01-09 | 2004-08-05 | Sharp Corp | Oxide semiconductor light emitting element |
| US7667224B2 (en) | 2005-03-09 | 2010-02-23 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and semiconductor light emitting apparatus |
| JP2013110154A (en) * | 2011-11-17 | 2013-06-06 | Sanken Electric Co Ltd | Light emitting device |
-
1981
- 1981-03-09 JP JP3336181A patent/JPS57148383A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6140067A (en) * | 1984-07-31 | 1986-02-26 | Sanyo Electric Co Ltd | Light emitting diode for optical printer |
| JPS6450481A (en) * | 1987-07-27 | 1989-02-27 | Ortel Corp | Super light emitting diode and single mode laser |
| US5189496A (en) * | 1990-12-27 | 1993-02-23 | Eastman Kodak Company | Light-emitting diode with current-blocking |
| JP2004221112A (en) * | 2003-01-09 | 2004-08-05 | Sharp Corp | Oxide semiconductor light emitting element |
| US7667224B2 (en) | 2005-03-09 | 2010-02-23 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and semiconductor light emitting apparatus |
| JP2013110154A (en) * | 2011-11-17 | 2013-06-06 | Sanken Electric Co Ltd | Light emitting device |
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