JPS575377A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS575377A JPS575377A JP8058580A JP8058580A JPS575377A JP S575377 A JPS575377 A JP S575377A JP 8058580 A JP8058580 A JP 8058580A JP 8058580 A JP8058580 A JP 8058580A JP S575377 A JPS575377 A JP S575377A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- band gap
- photoelectric converter
- xalxas
- varied
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To eliminate the variation in the wavelength characteristics of a photoelectric converter with respect to the variation in the drive current by varying a band gap in the P-N junction surface. CONSTITUTION:Zn is diffused from one side face of Ga1-xAlxAs substrate 32, and a part 34 is formed in P type. Electrodes 35, 36 are respectively formed on the P type region 34 and the N type region 32 to form a light emitting element. The Ga1-xAlxAs is mixed crystal of GaAs and AlAs, and the band gap varies in response to the mixed ratio (x) from 1.43eV to 2.15eV. The ratio (x) is varied in the P-N junction formed of the P type region 34 and N type region 32, and accordingly the band gap is varied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8058580A JPS575377A (en) | 1980-06-13 | 1980-06-13 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8058580A JPS575377A (en) | 1980-06-13 | 1980-06-13 | Photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS575377A true JPS575377A (en) | 1982-01-12 |
Family
ID=13722417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8058580A Pending JPS575377A (en) | 1980-06-13 | 1980-06-13 | Photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS575377A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5221589A (en) * | 1975-08-12 | 1977-02-18 | Mitsubishi Electric Corp | Body of revolution driving device |
JPS5494294A (en) * | 1978-01-10 | 1979-07-25 | Handotai Kenkyu Shinkokai | Display unit |
-
1980
- 1980-06-13 JP JP8058580A patent/JPS575377A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5221589A (en) * | 1975-08-12 | 1977-02-18 | Mitsubishi Electric Corp | Body of revolution driving device |
JPS5494294A (en) * | 1978-01-10 | 1979-07-25 | Handotai Kenkyu Shinkokai | Display unit |
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