JPS6449003A - Light guide - Google Patents

Light guide

Info

Publication number
JPS6449003A
JPS6449003A JP20575787A JP20575787A JPS6449003A JP S6449003 A JPS6449003 A JP S6449003A JP 20575787 A JP20575787 A JP 20575787A JP 20575787 A JP20575787 A JP 20575787A JP S6449003 A JPS6449003 A JP S6449003A
Authority
JP
Japan
Prior art keywords
layer
light guide
light
guided
superlattice layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20575787A
Other languages
Japanese (ja)
Inventor
Yutaka Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20575787A priority Critical patent/JPS6449003A/en
Publication of JPS6449003A publication Critical patent/JPS6449003A/en
Pending legal-status Critical Current

Links

Landscapes

  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the formation of light guides on a wafer with high accuracy without forming ruggedness thereon by providing a superlattice layer to a region adjacent to a photoconductive layer and disordering a part of the superlattice layer to form a light guide layer. CONSTITUTION:This light guide is constituted by providing the superlattice layer 4 designed in such a manner that the band gap energy thereof is smaller than the band gap energy of the photoconductive layer 2 via a thin clad layer 3 on said photoconductive layer and disordering the part of the superlattice layer 4 adjacent to the region where light is guided by a impurity diffusing or laser annealing method. The superlattice layer is so designated as to absorb the guided light in the superlattice layer region and not to absorb the guided layer in the disordered region 6 and, therefore, the refractive index distribution of a projecting type is formed and the light is guided. The light guide sized <=2mum is thereby easily formed and the light guide which can be formed in the completely flat state of the wafer surface is obtd.
JP20575787A 1987-08-19 1987-08-19 Light guide Pending JPS6449003A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20575787A JPS6449003A (en) 1987-08-19 1987-08-19 Light guide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20575787A JPS6449003A (en) 1987-08-19 1987-08-19 Light guide

Publications (1)

Publication Number Publication Date
JPS6449003A true JPS6449003A (en) 1989-02-23

Family

ID=16512158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20575787A Pending JPS6449003A (en) 1987-08-19 1987-08-19 Light guide

Country Status (1)

Country Link
JP (1) JPS6449003A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205804A (en) * 1989-02-06 1990-08-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light guide
JPH0334485A (en) * 1989-06-30 1991-02-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JP2001111102A (en) * 1999-10-04 2001-04-20 Oki Electric Ind Co Ltd Rear end face reflectivity control type end face light emitting semiconductor element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02205804A (en) * 1989-02-06 1990-08-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light guide
JPH0334485A (en) * 1989-06-30 1991-02-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and manufacture thereof
JP2001111102A (en) * 1999-10-04 2001-04-20 Oki Electric Ind Co Ltd Rear end face reflectivity control type end face light emitting semiconductor element

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