JPS5645093A - Manufacturing of semiconductor laser element - Google Patents

Manufacturing of semiconductor laser element

Info

Publication number
JPS5645093A
JPS5645093A JP12180779A JP12180779A JPS5645093A JP S5645093 A JPS5645093 A JP S5645093A JP 12180779 A JP12180779 A JP 12180779A JP 12180779 A JP12180779 A JP 12180779A JP S5645093 A JPS5645093 A JP S5645093A
Authority
JP
Japan
Prior art keywords
layer
thickness
type
activated
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12180779A
Other languages
Japanese (ja)
Inventor
Takuo Takenaka
Hiroshi Hayashi
Kazuhisa Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12180779A priority Critical patent/JPS5645093A/en
Publication of JPS5645093A publication Critical patent/JPS5645093A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Abstract

PURPOSE:To approximate stress of an activated layer to the minimum value and thereby to prolong lifetime of an element, in a double hetero-joint type semiconductor layer element, by controlling thickness of substrate and crystallized layer. CONSTITUTION:A laminated layer consisting of an N type GaAlAs is developed on an activated layer composed of GaAs or GaAlAs of N type or P type is developed on the above layer. Further, a P type GaAlAs laminated layer is piled on the layer, and by providing thus prepared layer with a GaAs contact layer, a double hetero-joint type semiconductor laser element is prepared. In such a constitution, if thickness of the substrate and the four layers are 100, 1, 0.2, 1 and 2mum, respectively, and mixed crystal ratio are 1.0, 0.75, 0.5, 0.3 and 0, respectively, stress of the activated layer can be shown by 11-15 curve. In other words, by controlling mixed crystal ratio when thickness is fixed or by controlling thickness when the mixed crystal ratio is fixed, stress to be caused to the activated layer can be largely reduced.
JP12180779A 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element Pending JPS5645093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12180779A JPS5645093A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12180779A JPS5645093A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5645093A true JPS5645093A (en) 1981-04-24

Family

ID=14820408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12180779A Pending JPS5645093A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5645093A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206184A (en) * 1982-05-25 1983-12-01 Sharp Corp Semiconductor laser element and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206184A (en) * 1982-05-25 1983-12-01 Sharp Corp Semiconductor laser element and manufacture thereof
JPH0416033B2 (en) * 1982-05-25 1992-03-19 Sharp Kk

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