JPS5274292A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5274292A
JPS5274292A JP14961875A JP14961875A JPS5274292A JP S5274292 A JPS5274292 A JP S5274292A JP 14961875 A JP14961875 A JP 14961875A JP 14961875 A JP14961875 A JP 14961875A JP S5274292 A JPS5274292 A JP S5274292A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser element
alzas
prolong
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14961875A
Other languages
Japanese (ja)
Inventor
Hisao Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14961875A priority Critical patent/JPS5274292A/en
Publication of JPS5274292A publication Critical patent/JPS5274292A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To prolong the service life of a semiconductor laser element by covering in two layers the two cleavage surfaces of the crystals of a double hetero structure by means of Ga1-AlzAs and insulating film.
JP14961875A 1975-12-17 1975-12-17 Semiconductor laser element Pending JPS5274292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14961875A JPS5274292A (en) 1975-12-17 1975-12-17 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14961875A JPS5274292A (en) 1975-12-17 1975-12-17 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5274292A true JPS5274292A (en) 1977-06-22

Family

ID=15479139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14961875A Pending JPS5274292A (en) 1975-12-17 1975-12-17 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5274292A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476680U (en) * 1977-11-10 1979-05-31
JPS63239874A (en) * 1986-11-13 1988-10-05 Sanyo Electric Co Ltd Light emitting diode array and manufacture thereof
JPS63314875A (en) * 1987-06-18 1988-12-22 Stanley Electric Co Ltd Light emitting diode chip structure
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
US6080598A (en) * 1996-01-05 2000-06-27 Nec Corporation Method of producing semiconductor laser element with mirror degradation suppressed

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5476680U (en) * 1977-11-10 1979-05-31
JPS6214713Y2 (en) * 1977-11-10 1987-04-15
JPS63239874A (en) * 1986-11-13 1988-10-05 Sanyo Electric Co Ltd Light emitting diode array and manufacture thereof
JPS63314875A (en) * 1987-06-18 1988-12-22 Stanley Electric Co Ltd Light emitting diode chip structure
US5413956A (en) * 1992-03-04 1995-05-09 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
US5571750A (en) * 1992-03-04 1996-11-05 Sharp Kabushiki Kaisha Method for producing a semiconductor laser device
US6080598A (en) * 1996-01-05 2000-06-27 Nec Corporation Method of producing semiconductor laser element with mirror degradation suppressed

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