JPS53147477A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53147477A
JPS53147477A JP6179977A JP6179977A JPS53147477A JP S53147477 A JPS53147477 A JP S53147477A JP 6179977 A JP6179977 A JP 6179977A JP 6179977 A JP6179977 A JP 6179977A JP S53147477 A JPS53147477 A JP S53147477A
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor device
insulating layer
insulating
layr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6179977A
Other languages
Japanese (ja)
Other versions
JPS5735590B2 (en
Inventor
Hisakazu Mukai
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6179977A priority Critical patent/JPS53147477A/en
Publication of JPS53147477A publication Critical patent/JPS53147477A/en
Publication of JPS5735590B2 publication Critical patent/JPS5735590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Abstract

PURPOSE:To stabilize characteristics of elements and achieve the maintenance of superior dielectric strength characteristics, etc. by interposing a non-insulating layer, in a state of being extended up to partial region of a semiconductor region, between a single crystal semiconductor region and an insulating layer, with said insulating layr being provided on the semiconductor region side.
JP6179977A 1977-05-27 1977-05-27 Semiconductor device Granted JPS53147477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6179977A JPS53147477A (en) 1977-05-27 1977-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6179977A JPS53147477A (en) 1977-05-27 1977-05-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53147477A true JPS53147477A (en) 1978-12-22
JPS5735590B2 JPS5735590B2 (en) 1982-07-29

Family

ID=13181499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6179977A Granted JPS53147477A (en) 1977-05-27 1977-05-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53147477A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879585A (en) * 1984-03-31 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4879585A (en) * 1984-03-31 1989-11-07 Kabushiki Kaisha Toshiba Semiconductor device
US5275974A (en) * 1992-07-30 1994-01-04 Northern Telecom Limited Method of forming electrodes for trench capacitors
US5841197A (en) * 1994-11-18 1998-11-24 Adamic, Jr.; Fred W. Inverted dielectric isolation process
US6124179A (en) * 1996-09-05 2000-09-26 Adamic, Jr.; Fred W. Inverted dielectric isolation process

Also Published As

Publication number Publication date
JPS5735590B2 (en) 1982-07-29

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