JPS5645094A - Manufacturing of semiconductor laser element - Google Patents

Manufacturing of semiconductor laser element

Info

Publication number
JPS5645094A
JPS5645094A JP12180879A JP12180879A JPS5645094A JP S5645094 A JPS5645094 A JP S5645094A JP 12180879 A JP12180879 A JP 12180879A JP 12180879 A JP12180879 A JP 12180879A JP S5645094 A JPS5645094 A JP S5645094A
Authority
JP
Japan
Prior art keywords
layer
mixed crystal
crystal ratio
activated
curves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12180879A
Other languages
Japanese (ja)
Inventor
Takuo Takenaka
Hiroshi Hayashi
Kazuhisa Murata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12180879A priority Critical patent/JPS5645094A/en
Publication of JPS5645094A publication Critical patent/JPS5645094A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Abstract

PURPOSE:To eliminate deterioration due to stress, by composing a semiconductor laser element's activated layer of GaAlAs and setting the mixed crystal ratio between 0.02 and 0.025, and also by composing a laminated layer on the both sides of the activated layer of GaAlAs having a mixed crystal ratio set between 0.3 and 0.35. CONSTITUTION:A GaAs/GaAlAs system double hetero-joint type semiconductor laser element is composed of a 100mum thick GaAs substrate, a 1mum thick AlGaAs layer, a 0.2mum thick AlGaAs layer, a 1mum thick AlGaAs layer and a 2mum thick GaAs contact layer. In such a constitution, a result of analysis of stress in the laminated layer in the centers of the activated layer and other layers is as depicted in the figure, and the activated layer's mixed crystal ratio which minimizes stress in the activated layer when the laminated layer's mixed crystal ratio is fixed to a prescribed value can be sought by a point crossing the horizontal axis. In short, curves 11-112 are the curves drawn by changing the activated layer's mixed crystal ratio in various ways, and curves m1 and m2 are the curves drawn by changing the substrate's thickness to 100mum and 350mum.
JP12180879A 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element Pending JPS5645094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12180879A JPS5645094A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12180879A JPS5645094A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS5645094A true JPS5645094A (en) 1981-04-24

Family

ID=14820432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12180879A Pending JPS5645094A (en) 1979-09-20 1979-09-20 Manufacturing of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5645094A (en)

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