JPS5750436A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5750436A
JPS5750436A JP12689780A JP12689780A JPS5750436A JP S5750436 A JPS5750436 A JP S5750436A JP 12689780 A JP12689780 A JP 12689780A JP 12689780 A JP12689780 A JP 12689780A JP S5750436 A JPS5750436 A JP S5750436A
Authority
JP
Japan
Prior art keywords
layer
etching
degree
incident angle
resist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12689780A
Other languages
Japanese (ja)
Other versions
JPH0313743B2 (en
Inventor
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12689780A priority Critical patent/JPS5750436A/en
Publication of JPS5750436A publication Critical patent/JPS5750436A/en
Publication of JPH0313743B2 publication Critical patent/JPH0313743B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To attain the whole surface etching for flattening in a short time by changing an incident angle of ion beams into the optimum value in conformity with the materials of each layer when milling a multilayer film shaped on a semiconductor substrate by ions. CONSTITUTION:Let us cite an instance milling a double layer film consisting of a PSG layer 3 and a resist layer 4 by ions. When the speed of etching of the PSG layer and the resist layer is measured by changing the incident angle theta of ion beams, the speed of etching is maximized at theta=40 degree in the PSG layer and at theta=60 degree in the resist layer. When the PSG layer 3 and the resist layer 4 formed on the semiconductor substrate 1 as shown in the figure are ion-milled by ion beams, the incident angle theta of the beams is set to 60 degree and the resist layer 4 is etched. When the incident angle theta is set to an angle of 50 degree, where the speed of etching of both is equal, at the same time as the PSG layer 3 is exposed, a flat etching surface is obtained in a short time.
JP12689780A 1980-09-12 1980-09-12 Manufacture of semiconductor device Granted JPS5750436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12689780A JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12689780A JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5750436A true JPS5750436A (en) 1982-03-24
JPH0313743B2 JPH0313743B2 (en) 1991-02-25

Family

ID=14946576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12689780A Granted JPS5750436A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5750436A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173839A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Flattening method of substrate
JPS60242623A (en) * 1984-05-16 1985-12-02 Mitsubishi Electric Corp Manufacturing method of semiconductor device
JPS6183031U (en) * 1984-11-07 1986-06-02
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer
JPS61227183A (en) * 1985-03-29 1986-10-09 Fuji Photo Film Co Ltd Flattening method
JPS6267825A (en) * 1985-09-20 1987-03-27 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Flattening method for surface of semiconductor device
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
JPH01230254A (en) * 1988-03-10 1989-09-13 Sanyo Electric Co Ltd Flattening method
JPH0555220A (en) * 1991-08-26 1993-03-05 Nec Corp Manufacture of semiconductor device
US6952867B2 (en) 2000-12-26 2005-10-11 Alps Electric Co., Ltd. Method for manufacturing perpendicular magnetic recording head having inverted trapezoidal main magnetic pole layer
JP2007511918A (en) * 2003-11-18 2007-05-10 エフ　イー　アイ　カンパニ Method and apparatus for controlling local changes in milling cross section of structure
US7273563B2 (en) 2004-02-10 2007-09-25 Tdk Corporation Method for manufacturing a magnetic recording medium
JP2008010102A (en) * 2006-06-30 2008-01-17 Toshiba Corp Method and apparatus for manufacturing magnetic recording medium
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium
WO2014002336A1 (en) * 2012-06-29 2014-01-03 キヤノンアネルバ株式会社 Ion beam processing method and ion beam processing device
KR20170053172A (en) 2015-10-09 2017-05-15 주식회사 쎄코 Antifog agent
JP2017123615A (en) * 2016-01-08 2017-07-13 エスアイアイ・クリスタルテクノロジー株式会社 Method for manufacturing piezoelectric vibrating piece

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5166778A (en) * 1974-10-25 1976-06-09 Hitachi Ltd Handotaisochino seizohoho
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS5166778A (en) * 1974-10-25 1976-06-09 Hitachi Ltd Handotaisochino seizohoho
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173839A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Flattening method of substrate
JPS60242623A (en) * 1984-05-16 1985-12-02 Mitsubishi Electric Corp Manufacturing method of semiconductor device
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer
JPS6183031U (en) * 1984-11-07 1986-06-02
JPS61227183A (en) * 1985-03-29 1986-10-09 Fuji Photo Film Co Ltd Flattening method
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
JPS6267825A (en) * 1985-09-20 1987-03-27 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Flattening method for surface of semiconductor device
JPH01230254A (en) * 1988-03-10 1989-09-13 Sanyo Electric Co Ltd Flattening method
JPH0555220A (en) * 1991-08-26 1993-03-05 Nec Corp Manufacture of semiconductor device
US6952867B2 (en) 2000-12-26 2005-10-11 Alps Electric Co., Ltd. Method for manufacturing perpendicular magnetic recording head having inverted trapezoidal main magnetic pole layer
US9852750B2 (en) 2003-11-18 2017-12-26 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
JP2007511918A (en) * 2003-11-18 2007-05-10 エフ　イー　アイ　カンパニ Method and apparatus for controlling local changes in milling cross section of structure
US8163145B2 (en) 2003-11-18 2012-04-24 Fei Company Method and apparatus for controlling topographical variation on a milled cross-section of a structure
US7273563B2 (en) 2004-02-10 2007-09-25 Tdk Corporation Method for manufacturing a magnetic recording medium
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium
JP2008010102A (en) * 2006-06-30 2008-01-17 Toshiba Corp Method and apparatus for manufacturing magnetic recording medium
GB2518085A (en) * 2012-06-29 2015-03-11 Canon Anelva Corp Ion beam processing method and ion beam processing device
JPWO2014002336A1 (en) * 2012-06-29 2016-05-30 キヤノンアネルバ株式会社 Ion beam processing method and ion beam processing apparatus
GB2518085B (en) * 2012-06-29 2017-03-01 Canon Anelva Corp Ion beam processing method and ion beam processing apparatus
WO2014002336A1 (en) * 2012-06-29 2014-01-03 キヤノンアネルバ株式会社 Ion beam processing method and ion beam processing device
US9984854B2 (en) 2012-06-29 2018-05-29 Canon Anelva Corporation Ion beam processing method and ion beam processing apparatus
US10546720B2 (en) 2012-06-29 2020-01-28 Canon Anelva Corporation Ion beam processing device
DE112013003293B4 (en) * 2012-06-29 2020-09-24 Canon Anelva Corporation Ion beam processing method and ion beam processing device
KR20170053172A (en) 2015-10-09 2017-05-15 주식회사 쎄코 Antifog agent
JP2017123615A (en) * 2016-01-08 2017-07-13 エスアイアイ・クリスタルテクノロジー株式会社 Method for manufacturing piezoelectric vibrating piece

Also Published As

Publication number Publication date
JPH0313743B2 (en) 1991-02-25

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