JPS6444069A - Formation of fine structure - Google Patents

Formation of fine structure

Info

Publication number
JPS6444069A
JPS6444069A JP20109987A JP20109987A JPS6444069A JP S6444069 A JPS6444069 A JP S6444069A JP 20109987 A JP20109987 A JP 20109987A JP 20109987 A JP20109987 A JP 20109987A JP S6444069 A JPS6444069 A JP S6444069A
Authority
JP
Japan
Prior art keywords
film
alignment
thin film
fine structure
reproducibility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20109987A
Other languages
Japanese (ja)
Inventor
Fumiaki Katano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP20109987A priority Critical patent/JPS6444069A/en
Publication of JPS6444069A publication Critical patent/JPS6444069A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the reproducibility of a dimensional accuracy due to the influence of deviation of alignment at the time of alignment by not employing an alignment method of severe alignment accuracy to form an insulating film fine structure. CONSTITUTION:A patterned first thin film is formed on a semiconductor crystalline layer, and covered with a second thin film. Then, an etching mask material 14 is so formed by an alignment method as to dispose one end on the second thin film, etched by anisotropic dry etching, and a second thin film 17 remains only on the second side face of the first film. After the remaining film 17 the first film and the crystalline layer are covered with third thin films 18, the film 18 is etched by anisotropic dry etching, and a step of retaining the film 18 as shown is included. Thus, a disadvantage of reducing the reproducibility of characteristics by the influence of the deviation of alignment in case of forming the resist film can be improved.
JP20109987A 1987-08-11 1987-08-11 Formation of fine structure Pending JPS6444069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20109987A JPS6444069A (en) 1987-08-11 1987-08-11 Formation of fine structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20109987A JPS6444069A (en) 1987-08-11 1987-08-11 Formation of fine structure

Publications (1)

Publication Number Publication Date
JPS6444069A true JPS6444069A (en) 1989-02-16

Family

ID=16435380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20109987A Pending JPS6444069A (en) 1987-08-11 1987-08-11 Formation of fine structure

Country Status (1)

Country Link
JP (1) JPS6444069A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

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