JPS5585093A - Injection-type laser - Google Patents

Injection-type laser

Info

Publication number
JPS5585093A
JPS5585093A JP16554478A JP16554478A JPS5585093A JP S5585093 A JPS5585093 A JP S5585093A JP 16554478 A JP16554478 A JP 16554478A JP 16554478 A JP16554478 A JP 16554478A JP S5585093 A JPS5585093 A JP S5585093A
Authority
JP
Japan
Prior art keywords
layer
insulative
semi
gaas
gaas layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16554478A
Other languages
Japanese (ja)
Inventor
Wataru Suzaki
Saburo Takamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16554478A priority Critical patent/JPS5585093A/en
Publication of JPS5585093A publication Critical patent/JPS5585093A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To narrow the irradiation angle of laser beams by selecting as a special values the thickness of GaAs layer and the composition of semi-insulative AlGaAs layer embracing GaAs layer.
CONSTITUTION: Semi-insulative AlGaAs layer 2i is formed on GaAs substrate 1i. The n-type GaAs layer 3n, and semi-insulative AlGaAs layer 4i are sequentially formed to constitute a dual hetero-sealing consisting of layers 2i, 3n and 4i. Next, layers 1p+. 1p, 2p+, 2p, 3p+, 3p, 4p+ and 4p are formed by selectively diffusing Zn in two steps. The irradiation angle is made at 30° and less if the selected thickness of GaAs layer is 0.5μm and selected x of semi-insulative AlxGa1-xAs layer embracing GaAs layer, is set approximately at 0.05.
COPYRIGHT: (C)1980,JPO&Japio
JP16554478A 1978-12-21 1978-12-21 Injection-type laser Pending JPS5585093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16554478A JPS5585093A (en) 1978-12-21 1978-12-21 Injection-type laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16554478A JPS5585093A (en) 1978-12-21 1978-12-21 Injection-type laser

Publications (1)

Publication Number Publication Date
JPS5585093A true JPS5585093A (en) 1980-06-26

Family

ID=15814389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16554478A Pending JPS5585093A (en) 1978-12-21 1978-12-21 Injection-type laser

Country Status (1)

Country Link
JP (1) JPS5585093A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766472A (en) * 1986-01-06 1988-08-23 Francois Brillouet Monolithic semiconductor structure of a laser and a field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766472A (en) * 1986-01-06 1988-08-23 Francois Brillouet Monolithic semiconductor structure of a laser and a field effect transistor

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