JPS5585093A - Injection-type laser - Google Patents
Injection-type laserInfo
- Publication number
- JPS5585093A JPS5585093A JP16554478A JP16554478A JPS5585093A JP S5585093 A JPS5585093 A JP S5585093A JP 16554478 A JP16554478 A JP 16554478A JP 16554478 A JP16554478 A JP 16554478A JP S5585093 A JPS5585093 A JP S5585093A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulative
- semi
- gaas
- gaas layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To narrow the irradiation angle of laser beams by selecting as a special values the thickness of GaAs layer and the composition of semi-insulative AlGaAs layer embracing GaAs layer.
CONSTITUTION: Semi-insulative AlGaAs layer 2i is formed on GaAs substrate 1i. The n-type GaAs layer 3n, and semi-insulative AlGaAs layer 4i are sequentially formed to constitute a dual hetero-sealing consisting of layers 2i, 3n and 4i. Next, layers 1p+. 1p, 2p+, 2p, 3p+, 3p, 4p+ and 4p are formed by selectively diffusing Zn in two steps. The irradiation angle is made at 30° and less if the selected thickness of GaAs layer is 0.5μm and selected x of semi-insulative AlxGa1-xAs layer embracing GaAs layer, is set approximately at 0.05.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16554478A JPS5585093A (en) | 1978-12-21 | 1978-12-21 | Injection-type laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16554478A JPS5585093A (en) | 1978-12-21 | 1978-12-21 | Injection-type laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5585093A true JPS5585093A (en) | 1980-06-26 |
Family
ID=15814389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16554478A Pending JPS5585093A (en) | 1978-12-21 | 1978-12-21 | Injection-type laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585093A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766472A (en) * | 1986-01-06 | 1988-08-23 | Francois Brillouet | Monolithic semiconductor structure of a laser and a field effect transistor |
-
1978
- 1978-12-21 JP JP16554478A patent/JPS5585093A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4766472A (en) * | 1986-01-06 | 1988-08-23 | Francois Brillouet | Monolithic semiconductor structure of a laser and a field effect transistor |
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