JPS5513925A - Oxidized nitrogen film and its manufacturing mehtod - Google Patents

Oxidized nitrogen film and its manufacturing mehtod

Info

Publication number
JPS5513925A
JPS5513925A JP8657378A JP8657378A JPS5513925A JP S5513925 A JPS5513925 A JP S5513925A JP 8657378 A JP8657378 A JP 8657378A JP 8657378 A JP8657378 A JP 8657378A JP S5513925 A JPS5513925 A JP S5513925A
Authority
JP
Japan
Prior art keywords
film
gao
iii
foundamental
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8657378A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Ikuo Shioda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP8657378A priority Critical patent/JPS5513925A/en
Publication of JPS5513925A publication Critical patent/JPS5513925A/en
Priority to US06/215,442 priority patent/US4331737A/en
Priority to US06/351,618 priority patent/US4416952A/en
Priority to US06/351,619 priority patent/US4436770A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To make the surface of III-V familty compound inactive by providing for the semiconductor surface, GaOxNy film or AlOxNy film, or their mixed Gax, AlyOxNy, film as a novel inactive film.
CONSTITUTION: A specific resistance of GaOxNy film and the surface foundamental density of III-V family semiconductor interface and GaOxNy film depend heavily upon O/N(x/y) of the film. By making use of such a nature, the GaOxNy film having a low ratio of O/N is laminated initially on the substrate of the III-V family semiconductor to form the GaOx1Ny1 of a first layer, successively the GaOx2Ny2 film having a greater ratio of O/N is covered thereon. In this case, the specific resistance and interface foundamental density for the coved layer of the insulated film can be considerably improved to obtain the desirable insulated film. As well known, the GaOxNy film, vapor attachment of GaOxNy having a predetermined ratio of x/y and an independent control for the reaching rate to the substrate of GaN and Ga2O3 from the sources.
COPYRIGHT: (C)1980,JPO&Japio
JP8657378A 1978-04-01 1978-07-14 Oxidized nitrogen film and its manufacturing mehtod Pending JPS5513925A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8657378A JPS5513925A (en) 1978-07-14 1978-07-14 Oxidized nitrogen film and its manufacturing mehtod
US06/215,442 US4331737A (en) 1978-04-01 1980-12-11 Oxynitride film and its manufacturing method
US06/351,618 US4416952A (en) 1978-04-01 1982-02-24 Oxynitride film and its manufacturing method
US06/351,619 US4436770A (en) 1978-04-01 1982-02-24 Oxynitride film and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8657378A JPS5513925A (en) 1978-07-14 1978-07-14 Oxidized nitrogen film and its manufacturing mehtod

Publications (1)

Publication Number Publication Date
JPS5513925A true JPS5513925A (en) 1980-01-31

Family

ID=13890745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8657378A Pending JPS5513925A (en) 1978-04-01 1978-07-14 Oxidized nitrogen film and its manufacturing mehtod

Country Status (1)

Country Link
JP (1) JPS5513925A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
CN103081026A (en) * 2011-03-04 2013-05-01 Lg化学株式会社 Conductive structure and method for manufacturing same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5021365A (en) * 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
CN103081026A (en) * 2011-03-04 2013-05-01 Lg化学株式会社 Conductive structure and method for manufacturing same
JP2014512455A (en) * 2011-03-04 2014-05-22 エルジー・ケム・リミテッド Conductive structure and manufacturing method thereof
EP2682948A4 (en) * 2011-03-04 2014-08-13 Lg Chemical Ltd Conductive structure and method for manufacturing same
EP2682949A4 (en) * 2011-03-04 2014-08-20 Lg Chemical Ltd Electrically-conductive structure and a production method therefor
US9357636B2 (en) 2011-03-04 2016-05-31 Lg Chem, Ltd. Electrically-conductive structure and a production method therefor
EP3057103A1 (en) * 2011-03-04 2016-08-17 LG Chem, Ltd. Conductive structure body and method for manufacturing the same
US10051727B2 (en) 2011-03-04 2018-08-14 Lg Chem, Ltd. Electrically-conductive structure and a production method therefor
US10057979B2 (en) 2011-03-04 2018-08-21 Lg Chem, Ltd. Conductive structure body and method for manufacturing the same

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