JPS5513925A - Oxidized nitrogen film and its manufacturing mehtod - Google Patents
Oxidized nitrogen film and its manufacturing mehtodInfo
- Publication number
- JPS5513925A JPS5513925A JP8657378A JP8657378A JPS5513925A JP S5513925 A JPS5513925 A JP S5513925A JP 8657378 A JP8657378 A JP 8657378A JP 8657378 A JP8657378 A JP 8657378A JP S5513925 A JPS5513925 A JP S5513925A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gao
- iii
- foundamental
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To make the surface of III-V familty compound inactive by providing for the semiconductor surface, GaOxNy film or AlOxNy film, or their mixed Gax, AlyOxNy, film as a novel inactive film.
CONSTITUTION: A specific resistance of GaOxNy film and the surface foundamental density of III-V family semiconductor interface and GaOxNy film depend heavily upon O/N(x/y) of the film. By making use of such a nature, the GaOxNy film having a low ratio of O/N is laminated initially on the substrate of the III-V family semiconductor to form the GaOx1Ny1 of a first layer, successively the GaOx2Ny2 film having a greater ratio of O/N is covered thereon. In this case, the specific resistance and interface foundamental density for the coved layer of the insulated film can be considerably improved to obtain the desirable insulated film. As well known, the GaOxNy film, vapor attachment of GaOxNy having a predetermined ratio of x/y and an independent control for the reaching rate to the substrate of GaN and Ga2O3 from the sources.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8657378A JPS5513925A (en) | 1978-07-14 | 1978-07-14 | Oxidized nitrogen film and its manufacturing mehtod |
US06/215,442 US4331737A (en) | 1978-04-01 | 1980-12-11 | Oxynitride film and its manufacturing method |
US06/351,618 US4416952A (en) | 1978-04-01 | 1982-02-24 | Oxynitride film and its manufacturing method |
US06/351,619 US4436770A (en) | 1978-04-01 | 1982-02-24 | Oxynitride film and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8657378A JPS5513925A (en) | 1978-07-14 | 1978-07-14 | Oxidized nitrogen film and its manufacturing mehtod |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5513925A true JPS5513925A (en) | 1980-01-31 |
Family
ID=13890745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8657378A Pending JPS5513925A (en) | 1978-04-01 | 1978-07-14 | Oxidized nitrogen film and its manufacturing mehtod |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513925A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
CN103081026A (en) * | 2011-03-04 | 2013-05-01 | Lg化学株式会社 | Conductive structure and method for manufacturing same |
-
1978
- 1978-07-14 JP JP8657378A patent/JPS5513925A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843450A (en) * | 1986-06-16 | 1989-06-27 | International Business Machines Corporation | Compound semiconductor interface control |
US5021365A (en) * | 1986-06-16 | 1991-06-04 | International Business Machines Corporation | Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning |
CN103081026A (en) * | 2011-03-04 | 2013-05-01 | Lg化学株式会社 | Conductive structure and method for manufacturing same |
JP2014512455A (en) * | 2011-03-04 | 2014-05-22 | エルジー・ケム・リミテッド | Conductive structure and manufacturing method thereof |
EP2682948A4 (en) * | 2011-03-04 | 2014-08-13 | Lg Chemical Ltd | Conductive structure and method for manufacturing same |
EP2682949A4 (en) * | 2011-03-04 | 2014-08-20 | Lg Chemical Ltd | Electrically-conductive structure and a production method therefor |
US9357636B2 (en) | 2011-03-04 | 2016-05-31 | Lg Chem, Ltd. | Electrically-conductive structure and a production method therefor |
EP3057103A1 (en) * | 2011-03-04 | 2016-08-17 | LG Chem, Ltd. | Conductive structure body and method for manufacturing the same |
US10051727B2 (en) | 2011-03-04 | 2018-08-14 | Lg Chem, Ltd. | Electrically-conductive structure and a production method therefor |
US10057979B2 (en) | 2011-03-04 | 2018-08-21 | Lg Chem, Ltd. | Conductive structure body and method for manufacturing the same |
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