JPS57133691A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57133691A
JPS57133691A JP1879681A JP1879681A JPS57133691A JP S57133691 A JPS57133691 A JP S57133691A JP 1879681 A JP1879681 A JP 1879681A JP 1879681 A JP1879681 A JP 1879681A JP S57133691 A JPS57133691 A JP S57133691A
Authority
JP
Japan
Prior art keywords
active layer
layer
laser
same plane
lambda4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1879681A
Other languages
Japanese (ja)
Inventor
Nobuyasu Hase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1879681A priority Critical patent/JPS57133691A/en
Publication of JPS57133691A publication Critical patent/JPS57133691A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To conduct multiple functioning extremely easily by utilizing a poly- dimensional group compound semiconductor epitaxial layer with a plurality of regions, the composition ratios thereof differ, into an active layer. CONSTITUTION:An In1-xGaxAsyP1-y epitaxial layer 13 having different composition ratios are formed onto a single crystal InP clad layer 12 grown on a single crystal InP substrate 11. That is, the active layer 13-1 corresponding to the laser luminescence of lambda1 wavelength, the active layer 13-2 corresponding to the laser luminescence of lambda2, the active layer 13-3 corresponding to the laser luminesence of lambda3 and the active layer 13-4 corresponding to the laser luminescence of lambda4 are each grown on the same plane in epitaxial shapes. An InP clad layer 14 and an SiO2 film 15 are shaped, and an electrode 16 and striped bodies 17 are formed. According to this constitution, the four active layers are arranged on the same plane, and the laser beams of lambda1-lambda4 are emitted from the same plane.
JP1879681A 1981-02-10 1981-02-10 Semiconductor device and manufacture thereof Pending JPS57133691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1879681A JPS57133691A (en) 1981-02-10 1981-02-10 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1879681A JPS57133691A (en) 1981-02-10 1981-02-10 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57133691A true JPS57133691A (en) 1982-08-18

Family

ID=11981551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1879681A Pending JPS57133691A (en) 1981-02-10 1981-02-10 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57133691A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227089A (en) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Manufacture of multi-wavelength semiconductor laser
WO2003012832A2 (en) * 2001-07-31 2003-02-13 Gore Enterprise Holdings, Inc. Multiple epitaxial region substrate and technique for making the same
JP2004328011A (en) * 1998-12-22 2004-11-18 Sony Corp Manufacturing method of semiconductor light emitting device
JP2009016881A (en) * 1998-12-22 2009-01-22 Sony Corp Manufacturing method of semiconductor light emitting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same
JPS55141780A (en) * 1979-04-24 1980-11-05 Nec Corp Multiple wavelength integrated semiconductor laser array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same
JPS55141780A (en) * 1979-04-24 1980-11-05 Nec Corp Multiple wavelength integrated semiconductor laser array

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227089A (en) * 1987-03-17 1988-09-21 Matsushita Electric Ind Co Ltd Manufacture of multi-wavelength semiconductor laser
JP2004328011A (en) * 1998-12-22 2004-11-18 Sony Corp Manufacturing method of semiconductor light emitting device
JP2009016881A (en) * 1998-12-22 2009-01-22 Sony Corp Manufacturing method of semiconductor light emitting device
WO2003012832A2 (en) * 2001-07-31 2003-02-13 Gore Enterprise Holdings, Inc. Multiple epitaxial region substrate and technique for making the same
WO2003012832A3 (en) * 2001-07-31 2003-10-02 Gore Enterprise Holdings Inc Multiple epitaxial region substrate and technique for making the same

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