JPS55141780A - Multiple wavelength integrated semiconductor laser array - Google Patents

Multiple wavelength integrated semiconductor laser array

Info

Publication number
JPS55141780A
JPS55141780A JP4981479A JP4981479A JPS55141780A JP S55141780 A JPS55141780 A JP S55141780A JP 4981479 A JP4981479 A JP 4981479A JP 4981479 A JP4981479 A JP 4981479A JP S55141780 A JPS55141780 A JP S55141780A
Authority
JP
Japan
Prior art keywords
film
mixed crystal
crystal ratio
substrate
alxga1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4981479A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4981479A priority Critical patent/JPS55141780A/en
Priority to US06/142,743 priority patent/US4318058A/en
Publication of JPS55141780A publication Critical patent/JPS55141780A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To form more than two LDs having separate wavelengths on one substrate by forming an active layer partially on an AlXGa1-XAs film varying in one direction in mixed crystal ratio X and a plurality of semiconductor lasers having vertical varying direction of X in resonance axial direction. CONSTITUTION:An n-type Al0.35Ga0.65As film 12 is formed on an n-type GaAs substrate 11, molecular beam is irradiated thereto, and an AlXGa1-XAs film 16 increasing gradually in the mixed crystal ratio X in X direction uniformly in Y direction is grown thereon. Then, with the film 16 as an active layer a p-type Al0.35Ga0.65As film 17 and a p-type GaAs film 18 are laminated thereon, and an AlXGa1-XAs multilayer film substrate of double hetero architecture varying in mixed crystal ratio X of AlAs in the film 16 is provided. The film 16 has uniform mixed crystal ratio X in Y direction and veries from 0-0.1 in X direction in single mode. Then, inter- element isolation grooves 21-25 are formed at equal interval as extented in Y direction reaching the film 12 are formed on a multilayer film substrate, and electrodes 41-45 are formed thereon.
JP4981479A 1979-04-24 1979-04-24 Multiple wavelength integrated semiconductor laser array Pending JPS55141780A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4981479A JPS55141780A (en) 1979-04-24 1979-04-24 Multiple wavelength integrated semiconductor laser array
US06/142,743 US4318058A (en) 1979-04-24 1980-04-22 Semiconductor diode laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4981479A JPS55141780A (en) 1979-04-24 1979-04-24 Multiple wavelength integrated semiconductor laser array

Publications (1)

Publication Number Publication Date
JPS55141780A true JPS55141780A (en) 1980-11-05

Family

ID=12841582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4981479A Pending JPS55141780A (en) 1979-04-24 1979-04-24 Multiple wavelength integrated semiconductor laser array

Country Status (1)

Country Link
JP (1) JPS55141780A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133691A (en) * 1981-02-10 1982-08-18 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS58190089A (en) * 1982-04-08 1983-11-05 ヌルデイン・ブアドマ Method of producing semiconductor laser with plural independent wavelengths and lasers made by same method
JPS61187268A (en) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd Photoelectric conversion integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155078A (en) * 1976-06-18 1977-12-23 Toshiba Corp Semiconductor light emitting device
JPS5321589A (en) * 1976-08-12 1978-02-28 Gni I Puroekutonui I Redokomet Hetero junction semiconductor device and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133691A (en) * 1981-02-10 1982-08-18 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS58190089A (en) * 1982-04-08 1983-11-05 ヌルデイン・ブアドマ Method of producing semiconductor laser with plural independent wavelengths and lasers made by same method
JPS61187268A (en) * 1985-02-14 1986-08-20 Matsushita Electric Ind Co Ltd Photoelectric conversion integrated circuit

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