JPS5664490A - Semiconductor laser element and its manufacture - Google Patents

Semiconductor laser element and its manufacture

Info

Publication number
JPS5664490A
JPS5664490A JP14096479A JP14096479A JPS5664490A JP S5664490 A JPS5664490 A JP S5664490A JP 14096479 A JP14096479 A JP 14096479A JP 14096479 A JP14096479 A JP 14096479A JP S5664490 A JPS5664490 A JP S5664490A
Authority
JP
Japan
Prior art keywords
layer
light
layers
gaalas
gaalas layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14096479A
Other languages
Japanese (ja)
Inventor
Masaaki Oshima
Isamu Akasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14096479A priority Critical patent/JPS5664490A/en
Publication of JPS5664490A publication Critical patent/JPS5664490A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable outputting light with multi-wavelengths by means of one laser element by a method wherein a plurality of laser oscillating regions are formed on a light waveguide, and light from these laser oscillating regions is extracted from the light waveguide. CONSTITUTION:An N-GaAlAs layer 2, an N-GaAlAs layer 3 and an N-GaAlAs layer 4 are grown on an N type GaAs substrate 1. A P-GaAs layer 5 and a P- GaAlAs layer 6 functioning as active layers are separately formed on the layer 4, and a P-GaAlAs layer 7 and a P-GaAs layer 8 are each made up on these layers 5, 6 successively. Oscillating light at the active layers 5 or 6 can be extracted to the outside from a waveguide 3 for output by directional coupling according to such constitution. Since the layers 5, 6 consist of semiconductors having different band gaps respectively lights with different wavelengths can be oscillated, and the two layers contribute largely to the performance of the photo multiplex communications.
JP14096479A 1979-10-30 1979-10-30 Semiconductor laser element and its manufacture Pending JPS5664490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14096479A JPS5664490A (en) 1979-10-30 1979-10-30 Semiconductor laser element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14096479A JPS5664490A (en) 1979-10-30 1979-10-30 Semiconductor laser element and its manufacture

Publications (1)

Publication Number Publication Date
JPS5664490A true JPS5664490A (en) 1981-06-01

Family

ID=15280907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14096479A Pending JPS5664490A (en) 1979-10-30 1979-10-30 Semiconductor laser element and its manufacture

Country Status (1)

Country Link
JP (1) JPS5664490A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159287A (en) * 1974-06-12 1975-12-23
JPS5124887A (en) * 1974-06-20 1976-02-28 Western Electric Co
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159287A (en) * 1974-06-12 1975-12-23
JPS5124887A (en) * 1974-06-20 1976-02-28 Western Electric Co
JPS5244192A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Optical integrated circuit
JPS5427786A (en) * 1977-08-04 1979-03-02 Nec Corp Integrated light source

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