JPS5599784A - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- JPS5599784A JPS5599784A JP748879A JP748879A JPS5599784A JP S5599784 A JPS5599784 A JP S5599784A JP 748879 A JP748879 A JP 748879A JP 748879 A JP748879 A JP 748879A JP S5599784 A JPS5599784 A JP S5599784A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- light emission
- visible light
- infrared light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To facilitate optical axis matching in an optical system and make it possible to observe the condition of light emission by simultaneously controlling light of various wavelengths by adding a small amount of visible light to the needed infrared light.
CONSTITUTION: The 1st active layer, p-AlxGa1-xAs layer 13, and the second active layers, p-AlyGa1-yA slayer 12, are sandwiched bythe 1st clad layer, p-AlzGa1-z layer 14, and the 2nd clad layer, n-AlzGa1-zAs layer 11. When the thickness of layer 13 is made about 1μm and its p-type impurity concentration about 2× 1018cm-3, the thickness of layer 12 is selected at 0.1∼8μm and its p-type impurity concentration at 1×1016cm-3. To obtain infrared light of wavelength of about 8500Å and visible light of about 6400Å, set x∼0.05 and y∼0.4. When current is made to flow in he forward direction, it is possible to obtan light emission from light emission part 18 in layer 13 and light emission part 19 in layer 12 simulatneously and on the same optical axis, infrared light of 8500Å from region 18, and visible light of 6400Å from region 19.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP748879A JPS5599784A (en) | 1979-01-24 | 1979-01-24 | Photodiode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP748879A JPS5599784A (en) | 1979-01-24 | 1979-01-24 | Photodiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599784A true JPS5599784A (en) | 1980-07-30 |
Family
ID=11667143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP748879A Pending JPS5599784A (en) | 1979-01-24 | 1979-01-24 | Photodiode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599784A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02294081A (en) * | 1989-05-09 | 1990-12-05 | Hitachi Cable Ltd | Light emitting element |
JPH03116879A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Multi-wavelength light emitting element |
JPH03127873A (en) * | 1989-10-13 | 1991-05-30 | Shin Etsu Handotai Co Ltd | Multiwavelength light emitting element |
-
1979
- 1979-01-24 JP JP748879A patent/JPS5599784A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02294081A (en) * | 1989-05-09 | 1990-12-05 | Hitachi Cable Ltd | Light emitting element |
JPH03116879A (en) * | 1989-09-29 | 1991-05-17 | Shin Etsu Handotai Co Ltd | Multi-wavelength light emitting element |
JPH03127873A (en) * | 1989-10-13 | 1991-05-30 | Shin Etsu Handotai Co Ltd | Multiwavelength light emitting element |
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