JPS5599784A - Photodiode - Google Patents

Photodiode

Info

Publication number
JPS5599784A
JPS5599784A JP748879A JP748879A JPS5599784A JP S5599784 A JPS5599784 A JP S5599784A JP 748879 A JP748879 A JP 748879A JP 748879 A JP748879 A JP 748879A JP S5599784 A JPS5599784 A JP S5599784A
Authority
JP
Japan
Prior art keywords
layer
light
light emission
visible light
infrared light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP748879A
Other languages
Japanese (ja)
Inventor
Isao Hino
Kuniaki Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP748879A priority Critical patent/JPS5599784A/en
Publication of JPS5599784A publication Critical patent/JPS5599784A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To facilitate optical axis matching in an optical system and make it possible to observe the condition of light emission by simultaneously controlling light of various wavelengths by adding a small amount of visible light to the needed infrared light.
CONSTITUTION: The 1st active layer, p-AlxGa1-xAs layer 13, and the second active layers, p-AlyGa1-yA slayer 12, are sandwiched bythe 1st clad layer, p-AlzGa1-z layer 14, and the 2nd clad layer, n-AlzGa1-zAs layer 11. When the thickness of layer 13 is made about 1μm and its p-type impurity concentration about 2× 1018cm-3, the thickness of layer 12 is selected at 0.1∼8μm and its p-type impurity concentration at 1×1016cm-3. To obtain infrared light of wavelength of about 8500Å and visible light of about 6400Å, set x∼0.05 and y∼0.4. When current is made to flow in he forward direction, it is possible to obtan light emission from light emission part 18 in layer 13 and light emission part 19 in layer 12 simulatneously and on the same optical axis, infrared light of 8500Å from region 18, and visible light of 6400Å from region 19.
COPYRIGHT: (C)1980,JPO&Japio
JP748879A 1979-01-24 1979-01-24 Photodiode Pending JPS5599784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP748879A JPS5599784A (en) 1979-01-24 1979-01-24 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP748879A JPS5599784A (en) 1979-01-24 1979-01-24 Photodiode

Publications (1)

Publication Number Publication Date
JPS5599784A true JPS5599784A (en) 1980-07-30

Family

ID=11667143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP748879A Pending JPS5599784A (en) 1979-01-24 1979-01-24 Photodiode

Country Status (1)

Country Link
JP (1) JPS5599784A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294081A (en) * 1989-05-09 1990-12-05 Hitachi Cable Ltd Light emitting element
JPH03116879A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Multi-wavelength light emitting element
JPH03127873A (en) * 1989-10-13 1991-05-30 Shin Etsu Handotai Co Ltd Multiwavelength light emitting element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294081A (en) * 1989-05-09 1990-12-05 Hitachi Cable Ltd Light emitting element
JPH03116879A (en) * 1989-09-29 1991-05-17 Shin Etsu Handotai Co Ltd Multi-wavelength light emitting element
JPH03127873A (en) * 1989-10-13 1991-05-30 Shin Etsu Handotai Co Ltd Multiwavelength light emitting element

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