JPS57198673A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS57198673A
JPS57198673A JP8262281A JP8262281A JPS57198673A JP S57198673 A JPS57198673 A JP S57198673A JP 8262281 A JP8262281 A JP 8262281A JP 8262281 A JP8262281 A JP 8262281A JP S57198673 A JPS57198673 A JP S57198673A
Authority
JP
Japan
Prior art keywords
layer
light
emitting device
light emitting
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8262281A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8262281A priority Critical patent/JPS57198673A/en
Publication of JPS57198673A publication Critical patent/JPS57198673A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the light emitting device which can deflect a light beam, in the light emitting device having a double heterostructure wherein a first conductive layer which oscillates laser light by second and third semiconductor layers whose forbidden band widths are larger than that of the first layer, by providing an electrode having a light receiving cut out part on the side of a stripe region set in the first conductive layer. CONSTITUTION:On an N type InP substrate 1, an N type InP clad layer 2, an InGaASP active layer 3 having the stripe region, and a P type InP clad layer 4 are layered and grown. An N side electrode 6 is deposited on the entire back surface of the substrate 1. A stripe shaped P side electrode 5 is formed on the layer 4. Parts of the layer 4 are exposed on both sides of the electrode 5 in this way. Light is irradiated on the stripe region provided in the layer 3 through said parts and the light is absorbed by the region. In this constitution, a transparent material is used for the layer 4. The forbidden band widths of the layers 4 and 2 are larger than the substrate 1. The composition of the layer 3 is selected in corresponding with the wavelength of the irradiated light. Thus the intensity distribution of the light from the element is made to be asymmetrical distribution.
JP8262281A 1981-05-30 1981-05-30 Semiconductor light emitting device Pending JPS57198673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8262281A JPS57198673A (en) 1981-05-30 1981-05-30 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8262281A JPS57198673A (en) 1981-05-30 1981-05-30 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS57198673A true JPS57198673A (en) 1982-12-06

Family

ID=13779548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8262281A Pending JPS57198673A (en) 1981-05-30 1981-05-30 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS57198673A (en)

Similar Documents

Publication Publication Date Title
GB1484594A (en) Heterostructure junction lasers
JPS649682A (en) Distributed feedback semiconductor laser
JPS57198673A (en) Semiconductor light emitting device
JPS56112782A (en) Semiconductor laser
JPS56112786A (en) Manufacture of semiconductor laser
JPS6155276B2 (en)
JPS58196084A (en) Distributed feedback type semiconductor laser element
JPS57162483A (en) Semiconductor luminous device
JPS57139984A (en) Buried photo emitting and receiving semiconductor integrated device
JPS56112783A (en) Semiconductor laser
JPS57139982A (en) Semiconductor laser element
JPS56164590A (en) Semiconductor laser
JPS57198677A (en) Optical semiconductor device
JPS57198679A (en) Optical semiconductor device
JPS57162381A (en) Buried type semiconductor laser element
JPS5789284A (en) Semiconductor laser
JPS57198678A (en) Optical semiconductor device
JPS57112090A (en) Semiconductor laser
JPS5640294A (en) Semiconductor laser
JPS57153486A (en) Semiconductor laser
JPS57173993A (en) Semiconductor laser
JPS5789285A (en) Semiconductor laser
JPS56116685A (en) Semiconductor laser device
JPS5580388A (en) Semiconductor light emitting device
JPS5763880A (en) Lateral distribution feedback type semiconductor laser