JPH01109789A - Light amplifier - Google Patents
Light amplifierInfo
- Publication number
- JPH01109789A JPH01109789A JP26843487A JP26843487A JPH01109789A JP H01109789 A JPH01109789 A JP H01109789A JP 26843487 A JP26843487 A JP 26843487A JP 26843487 A JP26843487 A JP 26843487A JP H01109789 A JPH01109789 A JP H01109789A
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- Prior art keywords
- optical waveguide
- optical
- face
- width
- layer
- Prior art date
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- 230000003287 optical effect Effects 0.000 claims abstract description 88
- 238000002347 injection Methods 0.000 claims abstract 2
- 239000007924 injection Substances 0.000 claims abstract 2
- 239000000969 carrier Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 6
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 6
- 229920006395 saturated elastomer Polymers 0.000 abstract description 4
- 238000013459 approach Methods 0.000 abstract 1
- 230000005281 excited state Effects 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
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Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、入射光を増幅して出力する光増幅器に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical amplifier that amplifies incident light and outputs the amplified light.
第６図は従来の光増幅器の一例を示す斜視図である。 FIG. 6 is a perspective view showing an example of a conventional optical amplifier.
この図において、１は一定の幅Ｗを有する光導波路、２
．３は、一対のｐおよびｎ電極、４，５は低い反射率を
有する共振器端面である。In this figure, 1 is an optical waveguide having a constant width W, 2
．． 3 is a pair of p and n electrodes, and 4 and 5 are resonator end faces having low reflectance.
次に動作について説明する。Next, the operation will be explained.
一対のｐおよびｎ電極２，３より光導波路１に電流を注
入すると、光導波路１内にレーザ光を発生し易い反転分
布（励起状態）ができる。次いで、一方の共振器端面４
よりレーザ光を光導波路１に入射させると、レーザ光が
増幅され、他方の共振器端面５により出射されることに
なる。When a current is injected into the optical waveguide 1 from the pair of p and n electrodes 2 and 3, a population inversion (excitation state) is created in the optical waveguide 1 that facilitates generation of laser light. Next, one resonator end face 4
When the laser light is made incident on the optical waveguide 1, the laser light is amplified and emitted from the other resonator end face 5.
上記のような従来の光増幅器では、光導波路１の幅Ｗが
一定であり、光強度が大きくなると増幅が飽和するほか
、幅Ｗが小さいと出射側の共振器端面５における光学的
損傷により低い光出力で光増幅器がこわれる等の問題点
があった。In the conventional optical amplifier as described above, the width W of the optical waveguide 1 is constant, and when the optical intensity increases, the amplification is saturated, and when the width W is small, the amplification is low due to optical damage at the resonator end face 5 on the output side. There were problems such as the optical amplifier being damaged by the optical output.
この発明は、かかる問題点を解決するためになされたも
ので、大きな光出力を得ることのできる光増幅器を得る
ことを目的とする。The present invention was made to solve this problem, and an object of the present invention is to provide an optical amplifier that can obtain a large optical output.
〔問題点を解決するための手段）
この発明に係る光増幅器は、光導波路層の出射端面側の
幅を入射端面側よりも広くしたものである。[Means for Solving the Problems] In the optical amplifier according to the present invention, the width of the optical waveguide layer on the output end face side is made wider than on the input end face side.
（作用〕
この発明においては、光導波路中の利得が出射端面まで
ｉ幅が飽和しない。また、出射端面における光導波路の
光学的損傷が起きにくい。(Function) In the present invention, the i-width of the gain in the optical waveguide is not saturated up to the output end face.Furthermore, optical damage to the optical waveguide at the output end face is less likely to occur.
第１図（ａ）、（ｂ）は、この発明の光増幅器の一実施
例の斜視図および光導波路の構造を示す上面図である。FIGS. 1(a) and 1(b) are a perspective view of an embodiment of the optical amplifier of the present invention and a top view showing the structure of the optical waveguide.
これらの図において、第６図と同一符号は同一のものを
示し、１１は光導波路、１２．１３は一対のｐおよびｎ
電極、１４．１５はそれぞれ１０％以下の反射率（ここ
では３％＝９７％の透過率）を有する入射端面および出
射端面、１６はｐ型ＧａＡｓからなる基板、１７は厚さ
１μｍのｎ形ＧａＡｓからなる電流狭窄層、１８は前記
光導波路１１の位置を決めるチャネル領域、１９は厚さ
１μｍのｐ形Ａｊ！ＧａＡｓ層、２０は前記光導波路１
１が設けられる厚さ０．２μｍのアンドープＡｊＺＧａ
Ａｓ層、２１はｎ形ＡｌＧａＡｓ層、２２は厚さ２μｍ
のｎ形ＧａＡｓからなるコンタクト層である。なお、ア
ンドープＡｊ２ＧａＡｓ層２０の禁制帯幅はｐ形ＡＪ！
ＧａＡｓ層１９、ｎ形Ａｊ２ＧａＡｓ層２１の禁制帯幅
より数／ １０ ｅ Ｖ狭く、かつ入射するレーザ光の
波長に対応する禁制帯幅より、例えば０．０１ｅＶ程度
狭くなっている。In these figures, the same symbols as in FIG. 6 indicate the same parts, 11 is an optical waveguide, 12.13 is a pair of p and n
Electrodes, 14.15 are entrance and exit end faces each having a reflectance of 10% or less (here, 3% = 97% transmittance), 16 is a substrate made of p-type GaAs, and 17 is an n-type with a thickness of 1 μm. A current confinement layer made of GaAs, 18 a channel region that determines the position of the optical waveguide 11, and 19 a p-type Aj! with a thickness of 1 μm. A GaAs layer 20 is the optical waveguide 1
Undoped AjZGa with a thickness of 0.2 μm provided with
As layer, 21 is n-type AlGaAs layer, 22 is 2 μm thick
This is a contact layer made of n-type GaAs. Note that the forbidden band width of the undoped Aj2GaAs layer 20 is p-type AJ!
It is several tenths of an eV narrower than the forbidden band widths of the GaAs layer 19 and the n-type Aj2GaAs layer 21, and is narrower, for example, by about 0.01 eV than the forbidden band width corresponding to the wavelength of the incident laser light.
また、Ｗ、、Ｗ、は入射端面１４および出射端面１５に
おける光導波路１１の幅、Ｌは光導波路１１の長さ、θ
は光導波路１１の拡り角であり、それぞれの寸法はＷｌ
＝３ μｍ、 Ｗ２ ＝ ２８７１ ｍ。In addition, W,, W are the widths of the optical waveguide 11 at the input end face 14 and the output end face 15, L is the length of the optical waveguide 11, and θ
is the divergence angle of the optical waveguide 11, and each dimension is Wl
= 3 μm, W2 = 2871 m.
なお、θは入射するレーザ光の真空中の拡り角を５度と
仮定した時の光導波路１１内の拡り角（Ｓｉ ｎ−’
（−！−ｓ ｉ ｎ ５°）、ｎ：光導波路の屈折率）
以下に選定しである。Note that θ is the divergence angle in the optical waveguide 11 (Si n-'
(-!-s i n 5°), n: refractive index of optical waveguide)
The following are selected.
次に動作について説明する。Next, the operation will be explained.
この発明の光増幅器においてもｐおよびｎ電極１２．１
３より電流注入を行えば光導波路１１の領域にレーザ光
を発生し易い反転分布ができる。Also in the optical amplifier of this invention, the p and n electrodes 12.1
If current is injected from step 3, a population inversion is created in the region of the optical waveguide 11 that facilitates generation of laser light.
したがって、外部より入射端面１４を介して光導波路１
１に入射されたレーザ光は増幅さ、れて出射端面１５よ
り出射されるが、光導波路１１の幅が出′射端面１５に
向かうに従って広くなっているので、光の増幅が飽和す
ることはない。また、出射端面１５における光導波路の
幅Ｗ２は大きいので、出射端面１５における光学的損傷
で光出力が制限されることもない。また、光導波路の拡
がり角θは、入射したレーザ光の光導波路１１内での拡
り角早下に設定しであるから、入射されたレーザ光が基
本モードなら出射されるレーザ光も基本モードとなる。Therefore, the optical waveguide 1 is
The laser light incident on the output end face 15 is amplified and emitted from the output end face 15. However, since the width of the optical waveguide 11 increases toward the output end face 15, the amplification of the light never reaches saturation. do not have. Further, since the width W2 of the optical waveguide at the output end face 15 is large, the optical output is not limited by optical damage at the output end face 15. Furthermore, since the divergence angle θ of the optical waveguide is set so that the divergence angle of the incident laser beam decreases quickly within the optical waveguide 11, if the incident laser beam is in the fundamental mode, the emitted laser beam is also in the fundamental mode. becomes.
さらに、光増幅器そのものの構造を考えた場合、レーザ
・ダイオードのようにそれ自体でレーザ発振を起こす必
要がないので、端面の反射率を小さくできる光導波路１
１の幅を広くできる等、レーザ・ダイオードでは難しい
構造設計が可能であり、大きな光出力を容易に得ること
が可能である。Furthermore, when considering the structure of the optical amplifier itself, unlike a laser diode, it is not necessary to generate laser oscillation by itself, so the optical waveguide 1 can reduce the reflectance of the end face.
It is possible to design a structure that is difficult to achieve with a laser diode, such as increasing the width of the laser diode, and it is possible to easily obtain a large optical output.
また、第２図はこの発明における光導波路の第２の実施
例を示す上面図であり、この実施例では端面近傍に幅の
一定な領域を設けている。Further, FIG. 2 is a top view showing a second embodiment of the optical waveguide according to the present invention, and in this embodiment, a region with a constant width is provided near the end face.
この図において、Ｌｌ、Ｌ２はそれぞれ入射端面１４、
出射端面１５近傍の光導波路１１の幅が一定な領域の長
さ、Ｌ３は光導波路１１の幅が大きくなっていく領域の
長さであり、それぞれの寸法は、例えばり、＝Ｌ２ ＝
２５μｍ、Ｌ、＝４５０μｍである。また、Ｗ２はＷ２
＞Ｗｌ ＋ ２ （Ｌ２＋Ｌ、）ｔａ、ｎθを満足す
るものである。In this figure, Ll and L2 are the entrance end face 14,
The length of the region where the width of the optical waveguide 11 is constant near the output end face 15, L3 is the length of the region where the width of the optical waveguide 11 increases, and the respective dimensions are, for example, =L2 =
25 μm, L = 450 μm. Also, W2 is W2
>Wl + 2 (L2+L,)ta, nθ.
第３図はこの発明における光導波路１１の第３の実施例
を示す上面図であり、この実施例では光導波路１１の拡
り角を途中より大きくしている。FIG. 3 is a top view showing a third embodiment of the optical waveguide 11 according to the present invention, and in this embodiment, the divergence angle of the optical waveguide 11 is made larger in the middle.
この第３図において、１１ａ、１１ｂは拡り角の異なる
光導波路、θａ、θｂはそれぞれの光導波路１１ａ、１
１ｂの拡り角であり、θｂ〉θａである。In FIG. 3, 11a and 11b are optical waveguides with different divergence angles, and θa and θb are optical waveguides 11a and 1, respectively.
1b, and θb>θa.
第４図はこの発明における光導波路の第４の実施例を示
す上面図であり、この実施例ではｐ電極１３を分割する
ことで光導波路１１を分割し、入射したレーザ光を別々
に増幅することを可能にしている。FIG. 4 is a top view showing a fourth embodiment of the optical waveguide according to the present invention. In this embodiment, the optical waveguide 11 is divided by dividing the p-electrode 13, and the incident laser light is amplified separately. It makes it possible.
この図において、１３ａ、１３ｂは分割したｎ電極を光
導波路１１の設けである層に投影したものである。In this figure, 13a and 13b are the divided n-electrodes projected onto the layer where the optical waveguide 11 is provided.
第５図はレーザ・ダイオードと光増幅器が同一チップ内
に集積されたこの発明の応用例を示す図である。FIG. 5 is a diagram showing an application example of the present invention in which a laser diode and an optical amplifier are integrated in the same chip.
この図において、２３はレーザ・ダイオードの光導波路
、２４は前記レーザ・ダイオードの光導波路２３と前記
増幅器の光導波路１１が共用されている領域、２５はレ
ーザ・ダイオードの電極を光導波路の設けである層に投
影したもの、２６は６０％以上（ここでは、９５％）の
反射率を有するレーザ・ダイオードの共振器端面であり
、第１図〜第４図中の入射端面１４に相当する。２７は
９０％の反射率を有するレーザ・ダイオードの他の共振
器端面である。In this figure, 23 is an optical waveguide of the laser diode, 24 is a region where the optical waveguide 23 of the laser diode and the optical waveguide 11 of the amplifier are shared, and 25 is an area where the electrode of the laser diode is provided with the optical waveguide. Projected onto a certain layer, 26 is a resonator end face of a laser diode having a reflectance of 60% or more (here, 95%), and corresponds to the entrance end face 14 in FIGS. 1 to 4. 27 is another cavity end face of the laser diode having a reflectance of 90%.
すなわち、この応用例においては、レーザ・ダイオード
の光導波路２３で発生したレーザ光の一部がレーザ・ダ
イオードの光導波路２３と光増幅器の光導波路１１が共
用されている領域２４より光増幅器の光導波路１１へ導
かれて増幅される。That is, in this application example, a part of the laser light generated in the optical waveguide 23 of the laser diode is transferred from the area 24 where the optical waveguide 23 of the laser diode and the optical waveguide 11 of the optical amplifier are shared to the optical waveguide of the optical amplifier. It is guided to the wave path 11 and amplified.
なお、上記実施例では、光増幅器の構造として第１図（
ａ）に示したＳＢＡレーザ構造のものを例として説明し
たが、この発明がこれに限定されるものでないことはい
うまでもない。In the above embodiment, the structure of the optical amplifier is shown in FIG.
Although the SBA laser structure shown in a) has been described as an example, it goes without saying that the present invention is not limited to this.
この発明は以上説明したとおり、光導波路層の出射端面
側の幅を入射端面側よりも広くしたので、光の増幅が飽
和することがないうえ、出力が出射端面における光学的
損傷の発生抑止のために制限されることもなくなり、大
きな光出力を得ることができるという効果がある。As explained above, in this invention, the width on the output end face side of the optical waveguide layer is made wider than the width on the input end face side, so that the amplification of light does not become saturated and the output is suppressed to prevent the occurrence of optical damage at the output end face. This has the effect that a large optical output can be obtained without being limited by this.
第１図はこの発明の光増幅器の一実施例の構成を説明す
るための図、第２図〜第４図はこの発明の光増幅器にお
ける光導波路の他の実施例を示す上面図、゛第５図はこ
の発明を応用した半導体装置を示す上面図、第６図は従
来の光増幅器の一例を示す斜視図である。
図において、１１．２３は光導波路、１２はｎ電極、１
３はｎ電極、１４は入射端面、１５は出射端面、１６は
基板、１７は電流狭９層、１９はｐ形ＡｎＧａＡＳ層、
２０はアンドープＡＩＬＧａＡｓ層、２１はｎ形ＡｕＧ
ａＡｓ層である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第６図
巨
手続補正書（自発）
６３ ｓ ２０
昭和 年 月 日
１、事件の表示 特願昭６２−２６８４３４号２、
発明の名称 光増幅器
３、補正をする者
５、補正の対象
明細書の発明の詳細な説明の欄２図面の簡単な説明の欄
および図面
６、補正の内容
（１）明細書第１頁１８行、第８頁２０行〜第９頁１行
の「の−例を示す」を、それぞれ「における先導ｉ／！
！！路を示す」と補正する。
（２）同じく第３頁４〜５行の［利得が出射端面まて増
幅が」を、「増幅が光強度が太き（なっても出射端面ま
で」と？ＩＩ’ｌ圧する。
（３）同じく第３頁１４行の「３％＝」を、１３％の反
射率＝１と補正する。
（４）同じく第４頁１６行、第５頁９行、第６頁１行、
１８行２第７頁１３行の１先導ｅ路Ｊを、いずれも「光
導波路１１」と補正する。
（５）同じく第５頁１７行の１できる」を、「できる、
あるいは」と補正する。
（６）同じく第６頁１９行、第７は３〜４行の「ｐ電極
」を、それぞれｒｎ電極」と補正する。
（７）同じ（第８頁１２行の「発生抑止」を、「発生」
と補正する。
（８）同じく第９頁２行のｒｌ １，２３は」を、「１
１は」と補正する。
（９）同じく第９頁６行の「層である。」を下記のよう
に補正する。
［層、２３はＬ・−ザ・ダイオードの光導波路である。
１
（１０）図面中、第５図を別紙のように補正する。
以 上
第５図
ｂFIG. 1 is a diagram for explaining the configuration of one embodiment of the optical amplifier of the present invention, and FIGS. 2 to 4 are top views showing other embodiments of the optical waveguide in the optical amplifier of the present invention. FIG. 5 is a top view showing a semiconductor device to which the present invention is applied, and FIG. 6 is a perspective view showing an example of a conventional optical amplifier. In the figure, 11.23 is an optical waveguide, 12 is an n-electrode, 1
3 is an n-electrode, 14 is an incident end face, 15 is an output end face, 16 is a substrate, 17 is a current narrowing layer 9, 19 is a p-type AnGaAS layer,
20 is an undoped AIL GaAs layer, 21 is an n-type AuG
It is an aAs layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) Figure 6 Large procedure amendment (voluntary) 63 s 20 Showa year, month, day 1, case description Patent application No. 1982-268434 2,
Title of the invention Optical amplifier 3, Person making the amendment 5, Detailed explanation of the invention column 2 of the specification subject to amendment 2 Brief explanation column of the drawings and Drawing 6, Contents of the amendment (1) Specification page 1 18 line, page 8, line 20 to page 9, line 1, ``show an example of'' is changed to ``leading i/!
! ! It is corrected to "show the path." (2) In the same way, on page 3, lines 4-5, "the gain is amplified up to the output end face" is changed to "the amplification increases the light intensity (even if it is amplified up to the output end face)". (3) Similarly, "3%=" on page 3, line 14, is corrected to 13% reflectance = 1. (4) Similarly, page 4, line 16, page 5, line 9, page 6, line 1,
The 1st leading e-path J in line 18, line 2, page 7, line 13 is corrected to "optical waveguide 11". (5) Similarly, on page 5, line 17, 1 can be changed to ``can,''
Or,” he corrected. (6) Similarly, on page 6, line 19, and on page 7, in lines 3 and 4, "p electrode" is corrected to "rn electrode," respectively. (7) Same (Page 8, line 12, “prevention of occurrence” has been changed to “occurrence”)
and correct it. (8) Similarly, rl 1,23 on page 9, line 2
1 is corrected. (9) Similarly, "layer" on page 9, line 6 is corrected as follows. [Layer 23 is the optical waveguide of the L-the diode. 1 (10) In the drawings, correct Figure 5 as shown in the attached sheet. Above Figure 5b
Claims (2)
アが閉じ込められて励起状態となる光導波路層を備えた
光増幅器において、前記光導波路層の出射端面側の幅を
入射端面側よりも広くしたことを特徴とする光増幅器。(1) In an optical amplifier equipped with an optical waveguide layer in which carriers are confined and excited by current injection into a double heterostructure, the width of the optical waveguide layer on the output end surface side is wider than on the input end surface side. An optical amplifier characterized by:
１０％以下のものであることを特徴とする特許請求の範
囲第（１）項記載の光増幅器。(2) The optical amplifier according to claim (1), wherein the optical waveguide has a reflectance of 10% or less at the input end face and the output end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268434A JP2526934B2 (en) | 1987-10-22 | 1987-10-22 | Optical amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268434A JP2526934B2 (en) | 1987-10-22 | 1987-10-22 | Optical amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01109789A true JPH01109789A (en) | 1989-04-26 |
| JP2526934B2 JP2526934B2 (en) | 1996-08-21 |
Family
ID=17458438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62268434A Expired - Fee Related JP2526934B2 (en) | 1987-10-22 | 1987-10-22 | Optical amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2526934B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01268084A (en) * | 1988-04-19 | 1989-10-25 | Nec Corp | Semiconductor light amplifier |
| JPH0567845A (en) * | 1991-03-15 | 1993-03-19 | Tokyo Inst Of Technol | Optical amplifier |
| WO2003077383A1 (en) * | 2002-03-13 | 2003-09-18 | Nikon Corporation | Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555594A (en) * | 1978-10-19 | 1980-04-23 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor light amplifier |
| JPS562693A (en) * | 1979-06-20 | 1981-01-12 | Agency Of Ind Science & Technol | Semiconductor laser device |
| JPS5752186A (en) * | 1980-07-22 | 1982-03-27 | Yokogawa Hewlett Packard Ltd | Semiconductor laser |
-
1987
- 1987-10-22 JP JP62268434A patent/JP2526934B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5555594A (en) * | 1978-10-19 | 1980-04-23 | Kokusai Denshin Denwa Co Ltd <Kdd> | Semiconductor light amplifier |
| JPS562693A (en) * | 1979-06-20 | 1981-01-12 | Agency Of Ind Science & Technol | Semiconductor laser device |
| JPS5752186A (en) * | 1980-07-22 | 1982-03-27 | Yokogawa Hewlett Packard Ltd | Semiconductor laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01268084A (en) * | 1988-04-19 | 1989-10-25 | Nec Corp | Semiconductor light amplifier |
| JPH0567845A (en) * | 1991-03-15 | 1993-03-19 | Tokyo Inst Of Technol | Optical amplifier |
| WO2003077383A1 (en) * | 2002-03-13 | 2003-09-18 | Nikon Corporation | Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2526934B2 (en) | 1996-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |