JPS5778186A - Optical fiber transceiving composite device - Google Patents

Optical fiber transceiving composite device

Info

Publication number
JPS5778186A
JPS5778186A JP15374880A JP15374880A JPS5778186A JP S5778186 A JPS5778186 A JP S5778186A JP 15374880 A JP15374880 A JP 15374880A JP 15374880 A JP15374880 A JP 15374880A JP S5778186 A JPS5778186 A JP S5778186A
Authority
JP
Japan
Prior art keywords
light emission
substrate
optical fiber
type region
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15374880A
Other languages
Japanese (ja)
Inventor
Seiichi Onoda
Yasuo Minae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15374880A priority Critical patent/JPS5778186A/en
Publication of JPS5778186A publication Critical patent/JPS5778186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable simultaneous light emission and reception at a single composite element by opposing the photodetecting surface and the light emitting surface of the elements made of a photodiode and a light emission diode and mounting the core end face of an optical fiber. CONSTITUTION:A transceiving photocomposite device is formed of a light emission and reception unit 1 and an optical fiber end 2. In this structure, the p type substrate 3 of a rectangular parallelpipe is used as a substrate of the light emission and reception unit 1, a circularly tubular groove 4 is formed on the lower center surface, an electrode 5, a p<+> type region 6 and an n type region 7 are sequentially formed from the lower in the cylindr surrounded by the groove 4 to form a light emission diode togethr with the substrate 3 and an electrode 10, and light is emitted from the junction surface between the region 7 and the substrate 3. The periphery of the cylinder forms a light emission diode formed of an electrode 10, a p<+> type region 11, a substrate 3, an n type region 12, an n<+> type region and a ring-shaped electrode in this sequence from the lower side concentrically. In this manner, the photodetecting surface 17 and the light emitting surface 18 are approached, and an optical fiber 19 is faced with these surfaces.
JP15374880A 1980-11-04 1980-11-04 Optical fiber transceiving composite device Pending JPS5778186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15374880A JPS5778186A (en) 1980-11-04 1980-11-04 Optical fiber transceiving composite device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15374880A JPS5778186A (en) 1980-11-04 1980-11-04 Optical fiber transceiving composite device

Publications (1)

Publication Number Publication Date
JPS5778186A true JPS5778186A (en) 1982-05-15

Family

ID=15569245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15374880A Pending JPS5778186A (en) 1980-11-04 1980-11-04 Optical fiber transceiving composite device

Country Status (1)

Country Link
JP (1) JPS5778186A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120457A2 (en) * 1983-03-25 1984-10-03 KE KOMMUNIKATIONS-ELEKTRONIK GMBH &amp; CO Optical transmitter and receiver
JPS6062167A (en) * 1983-09-14 1985-04-10 Omron Tateisi Electronics Co Light emitting and receiving element
US8680540B2 (en) 2003-01-28 2014-03-25 Sony Corporation Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116792A (en) * 1977-03-23 1978-10-12 Toshiba Corp Semiconductor light emitting-photo detecting composite device
JPS5598880A (en) * 1979-01-20 1980-07-28 Nec Corp Light transmitting/receiving semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53116792A (en) * 1977-03-23 1978-10-12 Toshiba Corp Semiconductor light emitting-photo detecting composite device
JPS5598880A (en) * 1979-01-20 1980-07-28 Nec Corp Light transmitting/receiving semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0120457A2 (en) * 1983-03-25 1984-10-03 KE KOMMUNIKATIONS-ELEKTRONIK GMBH &amp; CO Optical transmitter and receiver
JPS6062167A (en) * 1983-09-14 1985-04-10 Omron Tateisi Electronics Co Light emitting and receiving element
US8680540B2 (en) 2003-01-28 2014-03-25 Sony Corporation Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber

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