JPS63126217A - Liquid growth method - Google Patents

Abstract

PURPOSE:To prevent the scratches on the epitaxial surface generated due to loosening of a substrate when a growing method is conducted and also to prevent the mixing of carbon grains by a method wherein the solvent of a growing solution is coated on the circumference of the substrate hole provided in a slider, the substrate is fixed by placing it in the substrate hole. CONSTITUTION:A substrate holder 2 in which a substrate 5 is placed, and a solution holder 3 in which a solution is contained are provided, and a compound semiconductor is liquid-grown using a growing boat in which the substrate holder 2 and the solution holder 3 can be slidingly moved in a relative manner. At that time, the solution containing the solvent or the solute of a growing solution 4 is adhered to the circumference of the substrate 5, the substrate 5 is placed in the holder 2, and a liquid growth method is performed. As a result, a grown layer 12 is buried in a gap 10 by a saturated growing solution, and the substrate 5 is completely fixed to a substrate hole 6. Consequently, the scratches on the epitaxial surface generated by loosening of the substrate 5 when the growth method is performed and the mixing of carbon grains can be prevented.

Description

[Detailed description of the invention] Industrial applications The present invention relates to a liquid phase growth method.

BACKGROUND OF THE INVENTION Conventionally, compound semiconductors, particularly 1-V group semiconductors such as GaAs and InP, have been manufactured by a liquid phase growth method using a sliding port made of carbon.

However, the growth surface often contains carbon grains or has scratches, which impairs crystal fractionation.

This is thought to be because when the substrate or solution holder slides, the substrate sticks to the growth solution and floats, and the bottom of the solution holder comes into contact with the substrate surface, causing scratches on the substrate surface.

Therefore, a method commonly used as a countermeasure against floating of the substrate will be explained with reference to FIG. FIG. 4a is a sectional view of a conventional sliding port, and FIG. 4a is a top view. 1 is a port stand, 2 is a slidable slider equipped with a board 6, 3
is a solution holder that accommodates the growth solution 4, and 6 is a substrate hole that accommodates the substrate. When growing a multilayer film continuously, the substrate 6 is moved by sliding the slider 2 in the direction of the arrow 7 and brought into contact with each growth solution 4. In order to prevent the substrate from floating when it slides, the width Wg of the substrate 6 is set larger than the width wb of the solution hole 70, and portions 9 of the substrate 6 that do not come into contact with the growth solution 4 are provided at both ends of the substrate. , to suppress floating of the board. However, if the growth layer is thick, the difference in thickness between the growing region and the non-growing region 9 within the substrate becomes large, resulting in a drawback that scratches on the substrate surface become noticeable. FIG. 5 shows a schematic diagram of the shrimp substrate surface with scratches.

Problems to be Solved by the Invention As mentioned above, the conventional method has the problem that scratches generated on the substrate surface when the substrate slides cannot be prevented, especially when the growth layer is thick.

The present invention provides a method for easily eliminating scratches on the surface of a substrate due to lifting of the substrate when the substrate slides.

Means for Solving the Problems In order to solve the above problems, the solvent of the growth solution was applied around the substrate hole provided in the slider, the substrate was housed, and the substrate was fixed.

For production The effects of the above means are as follows.

That is, while the growth solution is being dissolved at a high temperature, the solvent placed in the hole in the substrate melts and melts back around the substrate, and as a result, the solute from the substrate dissolves into the solvent and becomes saturated. Then, growth occurs around the substrate, forming a growth layer. Furthermore, the grown layer fills the gap between the substrate hole and the substrate, and the substrate in the substrate hole is completely fixed, thereby preventing the substrate from floating when the substrate slides.

EXAMPLE An example of the present invention will be described below with reference to FIG. In FIG. 1, the same components as those in FIG. 4 are designated by the same numbers and their explanations will be omitted. Also, to simplify the explanation, In
An example of forming InP on a P substrate will be shown. FIG. 1 shows an example of a method for storing an InP substrate 5 in a substrate hole e in a slider 2 according to the present invention.

In order to fix the substrate 6, in this embodiment, an indium metal 11 used as a solvent for the growth solution is placed in the gap 10 between the substrate 5 and the substrate hole 6. On the other hand, store the growth solution in a solution holder, put it into the furnace core tube, and heat it at 677'C in a hydrogen gas atmosphere.
and dissolve the solution. Then, the indium metal 11 is also melted and liquefied at the same time, and the end portion of the InP substrate 6 is melted back by the indium metal 11, and phosphorus is absorbed, so that the indium metal 11 becomes a saturated InP growth solution. Then constant speed (0,6℃/min)
When the port is cooled and the growth temperature reaches 640°C, the slider 2 is moved to bring the substrate 6 into contact with the growth solution 4 for growth. I by changing the saturated growth solution
An nP growth layer grows. This situation will be explained using FIGS. 2 and 3. FIG. 2 is a top view of the vicinity of the substrate hole e in the slider 2, and FIG. 3 is a cross-sectional view of the growth port viewed from the sliding direction. As shown in Figure 2, In is grown by a saturated growth solution.
The P growth layer 12 is filled in the gap 10 and the substrate 5 is completely fixed in the substrate hole 6. Moreover, it becomes even more clear when viewed from the cross-sectional direction as shown in FIG. Here, the actual dimensions of the board are length L 15111111 x width W
The size W of the gap 10 is 0.1 to 0.20 mm.
It is set to 2mm. The reason why gap 1o is filled is
This is thought to be due to the edge growth effect at the edges of the substrate, which causes the growth at the corners of the substrate to be much faster than at the flat portions of the substrate, resulting in a larger growth layer. Also installed indium metal 1
Since the size of the gap 11 in the shape 1 is small, it is easier to install it if the shape is processed into a thin film. In addition, the indium metal 11 installed on the substrate end 9 melts back, causing a reduction in the substrate dimensions, but if you want to suppress the amount, using indium metal to which phosphorus has been added in advance has the same effect.

Needless to say, the indium metal or the indium metal added with phosphorus is provided near the substrate end 9, which does not come into contact with the growth solution, so that it will not be mixed into the growth solution and will not have an adverse effect on the growth. Furthermore, when installing both indium metals in the gap 10, the metals are large and may protrude higher than the surface of the slider 2, but when the solution is dissolved, the indium metals liquefy and reach the bottom surface of the gap 10. It fits well and there is no problem with slider 2 sliding.

If the gap 1o is filled with the growth layer 12 in this way, the gap 1o between the substrate 6 and the substrate hole 6 will be filled with high precision and the substrate 6
is completely fixed. Therefore, the floating of the substrate 6 that occurs when the substrate 6 slides is eliminated, and scratches on the surface of the shrimp and inclusion of carbon grains, which are observed after growth, are drastically reduced, and good growth is possible.

Effects of the Invention As described above, according to the present invention, in the liquid phase growth of compound semiconductors, it is possible to prevent scratches on the surface of the shrimp and the incorporation of carbon particles due to floating of the substrate that occurs during growth.
Its practicality is quite a dog. In addition, in the example, InP
We have taken up GaAs-based materials, A3GaA
Similar effects can be expected with other material systems such as s-based and GaP-based.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing the arrangement of the solvent metal stored in the substrate holes used in the liquid phase growth method in one embodiment of the present invention, and FIG. 3 is a cross-sectional view of the vicinity of the hole in the same substrate, FIG. It is a schematic diagram of the shrimp surface produced by this method. 2...Slider, 4...Growth solution,
6... Board, 6... Board hole, 11...
...Solvent, 12...Growth layer. Figure 2 12 Tom Gong

Claims (1)

[Claims] A substrate holder for storing a substrate and a solution holder for storing a solution are provided, and when performing liquid phase growth of a compound semiconductor using a growth port in which the substrate holder and the solution holder are relatively slidable, A liquid phase growth method, in which a solution containing a solvent or a solute of a growth solution is attached around the substrate holder, and growth is performed by storing the solution in the substrate holder.