JPS57200288A - Liquid-phase growing method - Google Patents

Liquid-phase growing method

Info

Publication number
JPS57200288A
JPS57200288A JP8399381A JP8399381A JPS57200288A JP S57200288 A JPS57200288 A JP S57200288A JP 8399381 A JP8399381 A JP 8399381A JP 8399381 A JP8399381 A JP 8399381A JP S57200288 A JPS57200288 A JP S57200288A
Authority
JP
Japan
Prior art keywords
slider
substrate
melts
fixing part
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8399381A
Other languages
Japanese (ja)
Inventor
Itsuo Umeki
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8399381A priority Critical patent/JPS57200288A/en
Publication of JPS57200288A publication Critical patent/JPS57200288A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To prevent the mixing of the respective melts and grow a crystal of stable impurity concentration in moving a slider having different melts on the surface of a substrate on a fixing part to permit the epitaxial growth of plural crystals, by moving the respective sliders in different regions of the fixing part.
CONSTITUTION: A slider having a melt 13 is moved on the surface of a substrate 11, e.g. GaAs or InP, on a fixing part 12 to permit the first epitaxial growth by the melt 13 on the surface of the substrate 11. The slider is then retreated to the left, and a slider having a melt 14 is moved from the right of the fixing part 12 on the surface of the substrate 11 to carry out the epitaxial growth. The moving routes of the sliders having the melts 13 and 14 are not overlapped, and both melts will not mix with each other. Thus, the epitaxial crystal growth of a specified impurity concentration will be stably formed.
COPYRIGHT: (C)1982,JPO&Japio
JP8399381A 1981-06-01 1981-06-01 Liquid-phase growing method Pending JPS57200288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8399381A JPS57200288A (en) 1981-06-01 1981-06-01 Liquid-phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399381A JPS57200288A (en) 1981-06-01 1981-06-01 Liquid-phase growing method

Publications (1)

Publication Number Publication Date
JPS57200288A true JPS57200288A (en) 1982-12-08

Family

ID=13818051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399381A Pending JPS57200288A (en) 1981-06-01 1981-06-01 Liquid-phase growing method

Country Status (1)

Country Link
JP (1) JPS57200288A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199729B1 (en) 2014-05-08 2015-12-01 Hirobo Co., Ltd. Coaxial counter-rotating unmanned helicopter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199729B1 (en) 2014-05-08 2015-12-01 Hirobo Co., Ltd. Coaxial counter-rotating unmanned helicopter

Similar Documents

Publication Publication Date Title
JPS57200288A (en) Liquid-phase growing method
JPS57128024A (en) Single crystallization for non-single crystalline semiconductor layer
JPS57129899A (en) Manufacture of single crystal of 3-5 group compound semiconductor
GB1526898A (en) Production of epitaxial layers on monocrystalline substrates
JPS5364465A (en) Semiconductor crystal production apparatus
JPS57197823A (en) Liquid phase epitaxial growing method
JPS57206033A (en) Method of liquid phase epitaxial growth
JPS5717494A (en) Manufacture of single crystal
JPS5286058A (en) Liquid phase epitaxial growth
RU2035799C1 (en) Heterostructure based on indium arsenide-antimonide-bismuthide and process of its manufacture
JPS57155727A (en) Manufacture of semiconductor device
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPH0247435B2 (en) GAASEKISOEPITAKISHARUSEICHOHO
JPS53100770A (en) Production of epitaxial growth layer
JPS52155186A (en) Liquid phase growth of iii-v group semiconductor
BENZ et al. Crystal growth of III-V-semiconductors under 0-g-conditions(zero gravity, GaAs, GaP, GaSb, InP, InSb)
JPS55117231A (en) Growing method of crystal
JPS6129121A (en) Gaas liquid phase epitaxial growth method
Arsenev Appearance of Dislocations in LaMgAl sub 11 O sub 19 Monocrystals
Iskakova Nonlinear Stability and Structure Formation During Directional Solidification of a Binary Melt. III. The Nonstationary Self-Modeling Regime
JPS5587423A (en) Semiconductor device
JPS57178394A (en) Manufacture of semiconductor light emitting device
JPS57129896A (en) Liquid phase epitaxial growing apparatus
Oka et al. Phase diagram and crystal growth of superconductive(NdCe) sub (2) CuO sub (4).
JPS5771129A (en) Liquid phase epitaxial growth