JPS57128024A - Single crystallization for non-single crystalline semiconductor layer - Google Patents

Single crystallization for non-single crystalline semiconductor layer

Info

Publication number
JPS57128024A
JPS57128024A JP1254981A JP1254981A JPS57128024A JP S57128024 A JPS57128024 A JP S57128024A JP 1254981 A JP1254981 A JP 1254981A JP 1254981 A JP1254981 A JP 1254981A JP S57128024 A JPS57128024 A JP S57128024A
Authority
JP
Japan
Prior art keywords
scanned
scanning
region
crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1254981A
Other languages
Japanese (ja)
Other versions
JPS6329819B2 (en
Inventor
Junji Sakurai
Haruhisa Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1254981A priority Critical patent/JPS57128024A/en
Publication of JPS57128024A publication Critical patent/JPS57128024A/en
Publication of JPS6329819B2 publication Critical patent/JPS6329819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Abstract

PURPOSE:To efficiently single-crystallize a non-signal crystalline layer by partly superposing a region to be scanned on the previously scanned region after the second scanning, thereby increasing the area of the single crystal obtained by the first scanning. CONSTITUTION:When a laser beam 15 is scanned, a substrate is solidified from the center upon movement of the beam 15. A line 17 represents a boundary line between a solid phase and a liquid phase so that the right side is solid and the left side is liquid. Since the center grows in accordance with the planar orientation of the crystal of the substrate contacted via a hole 3, it becomes a single crystal. Then, a rectangular laser beam 15' having an intensity gradually increasing from the region scanned by the first scanning an oblique intensity distribution abruptly decreasing at the opposite side is scanned as the second scanning from the start point of a hole 3 over a polycrystal 16b to be superposed on a single crystalline layer 16. Since the substrate is solidified, as shown by a boundary line 17', from the previously scanned region side in this manner, the crystal is grown in accordance with both orientations of the single crystal layer 16, a single crystalline layer 16' is thus formed, and the polycrystalline layer is formed at the lower side.
JP1254981A 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer Granted JPS57128024A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1254981A JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1254981A JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Publications (2)

Publication Number Publication Date
JPS57128024A true JPS57128024A (en) 1982-08-09
JPS6329819B2 JPS6329819B2 (en) 1988-06-15

Family

ID=11808407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1254981A Granted JPS57128024A (en) 1981-01-30 1981-01-30 Single crystallization for non-single crystalline semiconductor layer

Country Status (1)

Country Link
JP (1) JPS57128024A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119824A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS59224121A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Laser annealing device
JPS6076117A (en) * 1983-09-30 1985-04-30 Sony Corp Method for crystallization of semiconductor thin film
JPS60126840A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Laser beam irradiation device
JPS60189216A (en) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol Laser annealing equipment
JPS62145718A (en) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor layer
JPS62216318A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Laser annealing apparatus
JPH01246829A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02128314U (en) * 1989-03-29 1990-10-23

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52115681A (en) * 1975-12-10 1977-09-28 Shii Shii Fuan Jiyon Method of improving crystallinity of semiconductor coating by scanning laser beam

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119824A (en) * 1982-12-27 1984-07-11 Fujitsu Ltd Manufacture of semiconductor device
JPS59224121A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Laser annealing device
JPS6076117A (en) * 1983-09-30 1985-04-30 Sony Corp Method for crystallization of semiconductor thin film
JPS60126840A (en) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd Laser beam irradiation device
JPH0220137B2 (en) * 1983-12-13 1990-05-08 Matsushita Electric Ind Co Ltd
JPS60189216A (en) * 1984-03-08 1985-09-26 Agency Of Ind Science & Technol Laser annealing equipment
JPS62145718A (en) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol Manufacture of single crystal semiconductor layer
JPS62216318A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Laser annealing apparatus
JPH01246829A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing device

Also Published As

Publication number Publication date
JPS6329819B2 (en) 1988-06-15

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