JPS60189216A - Laser annealing equipment - Google Patents

Laser annealing equipment

Info

Publication number
JPS60189216A
JPS60189216A JP4293584A JP4293584A JPS60189216A JP S60189216 A JPS60189216 A JP S60189216A JP 4293584 A JP4293584 A JP 4293584A JP 4293584 A JP4293584 A JP 4293584A JP S60189216 A JPS60189216 A JP S60189216A
Authority
JP
Japan
Prior art keywords
laser beam
wedge prism
reflected
sample
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4293584A
Inventor
Hisaaki Aizaki
Original Assignee
Agency Of Ind Science & Technol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Of Ind Science & Technol filed Critical Agency Of Ind Science & Technol
Priority to JP4293584A priority Critical patent/JPS60189216A/en
Publication of JPS60189216A publication Critical patent/JPS60189216A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691Scanning of a beam

Abstract

PURPOSE:To contrive single crystallization in good reproducibility and in a wide area obtaining a sufficiently stable laser beam reducing return light to an actually ignorable extent by changing the inclination of the laser beam using a wedge prism. CONSTITUTION:The traveling direction 52 of a laser beam 10 is inclined with an angle 50 shown in the drawing from the traveling direction 51 of an incident laser beam perpendicular to the surface of a sample without using a wedge prism 30. In the case of not using the wedge prism 30, the laser beam reflected on the surface of the sample returns on the route of the incident laser beam but in the case of using the wedge prism 30, the laser beam is reflected to the direction inclined twice the inclination angle 50. In order not to return the reflected beam 53 on the route of the incident laser beam, the vertical angle 31 of the wedge prism 30 is required to be so determined that the inclination angle 50 of the laser beam is larger than the ratio of the radius of the incident laser beam 10 and the distance between an objective lens and the sample.
JP4293584A 1984-03-08 1984-03-08 Laser annealing equipment Pending JPS60189216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4293584A JPS60189216A (en) 1984-03-08 1984-03-08 Laser annealing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4293584A JPS60189216A (en) 1984-03-08 1984-03-08 Laser annealing equipment

Publications (1)

Publication Number Publication Date
JPS60189216A true JPS60189216A (en) 1985-09-26

Family

ID=12649867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4293584A Pending JPS60189216A (en) 1984-03-08 1984-03-08 Laser annealing equipment

Country Status (1)

Country Link
JP (1) JPS60189216A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158184A (en) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp Laser optical system for laser heat treatment
JP2002231655A (en) * 2001-01-30 2002-08-16 Ishikawajima Harima Heavy Ind Co Ltd Apparatus for laser annealing
JP2009206521A (en) * 2001-08-03 2009-09-10 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128024A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Single crystallization for non-single crystalline semiconductor layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158184A (en) * 2000-11-16 2002-05-31 Mitsubishi Electric Corp Laser optical system for laser heat treatment
JP2002231655A (en) * 2001-01-30 2002-08-16 Ishikawajima Harima Heavy Ind Co Ltd Apparatus for laser annealing
JP2009206521A (en) * 2001-08-03 2009-09-10 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device

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