JPS59224121A - Laser annealing device - Google Patents
Laser annealing deviceInfo
- Publication number
- JPS59224121A JPS59224121A JP9795983A JP9795983A JPS59224121A JP S59224121 A JPS59224121 A JP S59224121A JP 9795983 A JP9795983 A JP 9795983A JP 9795983 A JP9795983 A JP 9795983A JP S59224121 A JPS59224121 A JP S59224121A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- laser beam
- section
- beams
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005224 laser annealing Methods 0.000 title description 8
- 101100506443 Danio rerio helt gene Proteins 0.000 abstract 1
- 101100506445 Mus musculus Helt gene Proteins 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は半導体薄膜等の製造に用いるれるレーザアニ
ーリング装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laser annealing apparatus used for manufacturing semiconductor thin films and the like.
近年、半導体集積回路の高密度化が進むに伴い、半導体
集積回路の各素子寸法の微細化をはかって横方向の集積
度を向上させる他に、いったん形成された素子構造の上
に絶縁膜を全面にわたって形成し、さらに、この絶縁膜
上に半導体薄膜を設けて、この半導体薄膜を用いて素子
を形成するというようない゛わゆる三次・元構造が盛ん
に研究開発されている。とくに絶縁膜上に形成した多結
晶シリコン膜をレーザビームによシ照射し再結晶化させ
る方法が注目されている。また、半導体集積回路の高速
化が進むに伴い、半導体集積回路の各素子あるいは配線
部分と基板シリコンとの間の電気容量を小さくすること
が重要な課題となっている。In recent years, as the density of semiconductor integrated circuits has increased, in addition to improving the lateral integration by reducing the dimensions of each element in semiconductor integrated circuits, it is becoming increasingly important to add an insulating film over the element structure once it has been formed. A so-called three-dimensional structure is being actively researched and developed, in which an insulating film is formed over the entire surface, a semiconductor thin film is further provided on this insulating film, and an element is formed using this semiconductor thin film. In particular, a method of recrystallizing a polycrystalline silicon film formed on an insulating film by irradiating it with a laser beam is attracting attention. Furthermore, as the speed of semiconductor integrated circuits increases, it has become an important issue to reduce the electric capacitance between each element or wiring portion of the semiconductor integrated circuit and the silicon substrate.
こｔｌまでによく用いられているｐｎ接合分離と比較す
ると絶縁膜上に形成したシリコン膜を用いれば寄生容器
を小さくできるので、この意味でもレーザビームによる
再結晶化技術すなわちレーザアニーリング技術が注目さ
れている。しかし、現在の段階ではレーザアニーリング
には長時間を要し半導体集積回路用の半導体薄膜製造に
応用するのに十分とはいえない。Compared to the pn junction isolation that has been commonly used up until now, the parasitic container can be made smaller by using a silicon film formed on an insulating film, so recrystallization technology using a laser beam, that is, laser annealing technology, is attracting attention in this sense as well. ing. However, at the current stage, laser annealing requires a long time and is not sufficient to be applied to the production of semiconductor thin films for semiconductor integrated circuits.
以上説明ヒた一レーザアニーリング処理に長時間を要す
る原因の一つはレーザビームを走査する方式では、試料
上の走査領域を一本のレーザビートで順次走査していく
ためである。One of the reasons why the laser annealing process takes a long time as explained above is that in the laser beam scanning method, the scanning area on the sample is sequentially scanned with a single laser beat.
本発明の目的はレーザビームで走査する際に、これまで
のレーザアニーリング装置にくらべ、十分処理時間を短
縮でさるようなレーザアニーリング装置を提供すること
にある。An object of the present invention is to provide a laser annealing device that can sufficiently shorten processing time when scanning with a laser beam, compared to conventional laser annealing devices.
本発明によればレーザビームを発生するレーザ光源部ｆ
復故個備え、さらに該ｔ〜を数値リレーザ光源部から出
射されるレーザビーム、組み、１・】わせるレーザビー
ム組みあわせ部、レーザビームを試料上で走査するレー
ザビーム走査部、ｈ−よび試料保持部を儂えでいること
を特徴とするレーザアニーリング装置が得られる。。According to the present invention, a laser light source section f that generates a laser beam
a laser beam combining unit that makes the laser beam emitted from the numerical relay laser light source unit, a laser beam scanning unit that scans the laser beam on the sample; A laser annealing apparatus is obtained, which is characterized in that the sample holding part is omitted. .
次に本発明の実施例について図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
本発明の一実施例Ｃま、躬１図（ａ）に示すように第１
のレージ”光源部１１から出射され／ζ弔１のレーザビ
ーム５１および第２のレーザ光源部ｊ２から出射された
第２のレーザビーム５２はレーザビーム組みあわ上部２
０において組与あわされ、近接した２本のレーザビーム
５３と左る。次いで該レーザビーム５３はレーザビーム
走査部３０によシ任意の速就−Ｃ走亘され、試・科保持
ｓ４０に保持された試料の近接した２か所に照射される
。このとき第１図ｔｂ＋に示すように第１のレーザ光源
部１１から出射された第１のレーザビーム５１および第
２のレーザ光源部１２から出射された第２のレーザビー
ム５２けレーザビーム組みあわせ部２０において組みあ
わされ、レーザビーム５３となって試料保持部４０に保
持された試料に照射され、一方試料保持部４０はレーザ
ビーム走査部３０によって駆動され、結果としてレーザ
ビーム走査を実現してもかまわない。Embodiment C of the present invention As shown in FIG.
The laser beam 51 emitted from the light source section 11 of the laser beam 51 and the second laser beam 52 emitted from the second laser light source section j2 are combined into a laser beam combination upper section 2.
At 0, the two laser beams 53 are combined and left in close proximity. Next, the laser beam 53 is scanned by the laser beam scanning section 30 at an arbitrary speed, and is irradiated to two adjacent locations on the sample held in the examination/subject holding s40. At this time, as shown in FIG. 1 tb+, the first laser beam 51 emitted from the first laser light source section 11 and the second laser beam 52 emitted from the second laser light source section 12 are combined. The laser beams 53 are combined in the laser beam scanning section 20 and irradiated onto the sample held in the sample holding section 40, while the sample holding section 40 is driven by the laser beam scanning section 30, resulting in laser beam scanning. I don't mind.
またこの実施例では、組みあわされたレーザビーム５３
は試料上の近接した２か所に同時に照射されるが２本の
レーザビーム５３０１本１本が試料上で遠く離れて照射
されてもよい。逆に２本のレーザビーム５３が試料上で
互いに一部重なυありてもより０また組みあわせるレー
ザビームは２本とは限らず一般に複数本組みあわせるこ
とができるから、特定の２本は試料上で一部分互いに重
なシ合い他は近接あるいは遠く離れているというような
ことも可能である。Further, in this embodiment, the combined laser beam 53
Although two laser beams 5301 are simultaneously irradiated to two close locations on the sample, the two laser beams 5301 may be irradiated far apart on the sample. On the other hand, even if two laser beams 53 partially overlap each other υ on the sample, the number of laser beams to be combined is not limited to two, but generally can be combined, so it is possible to combine two or more laser beams. It is also possible that some parts overlap each other on the sample, while others are close to each other or are far apart.
次に本発明の要点をさらに詳しく説明するために、２つ
のレーザビームを合成５するレーザビーム合成部の実施
例について図を用いて説明する。Next, in order to explain the main points of the present invention in more detail, an embodiment of a laser beam combining section that combines two laser beams will be described with reference to the drawings.
第２図に示すように、レーザビーム合成部においては、
第１のレーザビーム５１は、弔１の反射ｌ ミラーにお
いて曲けられ、第１のレーザビーム補正部２２１におい
て強度および偏光特性が第２のレーザビーム５２と同等
になるように、強度減衰板等および］／４波長板等を用
い°Ｃ補正された後、レーザビーム組みあわせ用ミラー
２３０に入射する。As shown in Figure 2, in the laser beam combining section,
The first laser beam 51 is bent by the reflection l mirror of the funeral 1, and the first laser beam correction unit 221 uses an intensity attenuating plate etc. so that the intensity and polarization characteristics are equal to those of the second laser beam 52. After being corrected by °C using a ]/4 wavelength plate or the like, the light enters the laser beam combination mirror 230.
一方、第２のレーザビーム５２は、第２の反射ミラー２
１２において曲げられ、第２のレーザビーム補正部２２
２において強度および偏光特性が第１のレーザビーム５
１と同等になるように、強度減衰板等および１／４波長
板等を用いて補正された後レーザビーム組みあわせ用ミ
ラー２３０に入射する。On the other hand, the second laser beam 52 is directed to the second reflection mirror 2.
12, the second laser beam corrector 22
2, the intensity and polarization characteristics of the first laser beam 5
After the beam is corrected using an intensity attenuation plate or the like and a quarter-wave plate so that the beam becomes equal to 1, the beam enters the laser beam combination mirror 230.
このようにしてレーザビーム組みあわせ用ミラー２３０
に入射した第１のレーザビーム５１および第２のレーザ
ビーム５２は同一方向に反射され、組みあわされたレー
ザビーム５３を得ることができる。第１のレーザビーム
５１と第２のレーザビーム５２との相対位置は、第１の
反射ミラー２１１および第２の反射ミラー２１２とを適
当に調整することによ’）、Ｊ３丁望の相対位置関係に
することが可能である。従ってレーザビーム５３を用い
て試料を走査する場合に第１のレーザビーム５１による
走査領域と第２のレーザビーム５２による走査領域とが
相貫ならないよりに、第１のレーザビーム５１と第２の
レーザビーム５２との相対位置関係を調整することが可
能となシ、１本のレーザビームで走査する場合にくらべ
ほぼ１／２ の走査時間で同じ面積を走査することが可
能となる。In this way, the laser beam combination mirror 230
The first laser beam 51 and the second laser beam 52 incident on the laser beam 51 are reflected in the same direction, and a combined laser beam 53 can be obtained. The relative positions of the first laser beam 51 and the second laser beam 52 can be determined by appropriately adjusting the first reflecting mirror 211 and the second reflecting mirror 212. It is possible to make a relationship. Therefore, when scanning a sample using the laser beam 53, rather than the scanning area by the first laser beam 51 and the scanning area by the second laser beam 52 being inconsistent, the first laser beam 51 and the second laser beam 52 Since it is possible to adjust the relative positional relationship with the laser beam 52, it is possible to scan the same area in about half the scanning time compared to scanning with a single laser beam.
以上の説明では、第１のレーザビーム１１と第２のレー
ザビーム１２はほぼ同一平面上にある場合につい７て説
明したが、必ずしもこれに限られることなく、レーザビ
ーム組みあわせ部２０において反射ミラー、組みられせ
用ミラー等の角度および相対位置を適正に配置すれは、
上下に傑れている場合にも所望の組みあわされたレーザ
ビームを得ることができる。In the above description, the case where the first laser beam 11 and the second laser beam 12 are on substantially the same plane has been described, but the invention is not limited to this, and the laser beam combination unit 20 may include a reflection mirror. , to properly arrange the angle and relative position of the assembled mirrors, etc.
A desired combined laser beam can be obtained even when the upper and lower sides are outstanding.
また、以上の説明では、２つのレーザビームを組みあわ
せる場合について説明したが、これに限られることなく
、２本のレーザビームを組みあわせた彼にさらに他のレ
ーザビームを前述の説明と同様にし°Ｃ組みあわせ１１
は多数本のレーザビームを組みあわせることも可能であ
る。In addition, in the above explanation, the case where two laser beams are combined has been explained, but the case is not limited to this. °C combination 11
It is also possible to combine multiple laser beams.
第１図、ｗ、２図は本発明の詳細な説明するだめの図で
ある。
図において、１１・・・第１のレーザ光源部、１２・・
・１保持部、５１・・・第１のレーザビーム、５２・・
第２のレーデビーム、５３・・・組みあわされたレーザ
ビ・−ム、２１１・・・第１の反射ミラー、２１２・・
・第２の反射クラ−１２２１・・・第１のレーザビーム
補正部、２２２−・・第２のレーザビーム補正部、２３
０・・１／−ザビーノ・組みあわぜ用ミラー。
工業技術院長
オ １ 図
９９−
才 ２ 図FIGS. 1, w, and 2 are diagrams for explaining the present invention in detail. In the figure, 11... first laser light source section, 12...
・1 holding part, 51...first laser beam, 52...
Second laser beam, 53... Combined laser beam, 211... First reflecting mirror, 212...
- Second reflection club 1221...first laser beam correction section, 222-...second laser beam correction section, 23
0...1/-Zabino/combination mirror. Director of the Agency of Industrial Science and Technology 1 Figure 99- Year 2 Figure
Claims (1)
らに該複数個のレーザ光源部から出射されるレーザビー
ムを組みあわせるレーザビーム組みあわせ部、レーザビ
ームを試料上で走査するレーザビーム走査部、および試
料保持部を備えていることを特徴とするレーザアニーリ
ング装置。A laser beam combining unit that includes a plurality of laser light source units that generate laser beams, further combining the laser beams emitted from the plurality of laser light source units, and a laser beam scanning unit that scans the laser beam on the sample. and a sample holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9795983A JPS59224121A (en) | 1983-06-03 | 1983-06-03 | Laser annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9795983A JPS59224121A (en) | 1983-06-03 | 1983-06-03 | Laser annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59224121A true JPS59224121A (en) | 1984-12-17 |
Family
ID=14206205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9795983A Pending JPS59224121A (en) | 1983-06-03 | 1983-06-03 | Laser annealing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59224121A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246828A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing device |
| JPH01246826A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing |
| JPH01246829A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128024A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Single crystallization for non-single crystalline semiconductor layer |
| JPS57183024A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
-
1983
- 1983-06-03 JP JP9795983A patent/JPS59224121A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57128024A (en) * | 1981-01-30 | 1982-08-09 | Fujitsu Ltd | Single crystallization for non-single crystalline semiconductor layer |
| JPS57183024A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246828A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing device |
| JPH01246826A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing |
| JPH01246829A (en) * | 1988-03-28 | 1989-10-02 | Tokyo Electron Ltd | Beam annealing device |
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