MD626G2 - Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining - Google Patents

Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Info

Publication number
MD626G2
MD626G2 MD94-0004A MD940004A MD626G2 MD 626 G2 MD626 G2 MD 626G2 MD 940004 A MD940004 A MD 940004A MD 626 G2 MD626 G2 MD 626G2
Authority
MD
Moldova
Prior art keywords
cds
reactor
pgaas
pinp
inp
Prior art date
Application number
MD94-0004A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD626F2 (en
MD940004A (en
Inventor
Vasile Botnariuc
Petru Gaugas
Андрей КОВАЛ
Andrei Chitoroaga
Valentin Plesca
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD94-0004A priority Critical patent/MD626G2/en
Publication of MD940004A publication Critical patent/MD940004A/en
Publication of MD626F2 publication Critical patent/MD626F2/en
Publication of MD626G2 publication Critical patent/MD626G2/en

Links

Abstract

The invention relates to the semiconductor technique and may be used at the obtaining in the open gas - transporting - system P+ InP-PInP/CdS and P+ GaAs-pGaAs/CdS heterostructures for solar and photo cells.For rising the yield and quality of the solar cells electrophysical parameters by means of the proposed process, including the grow of the P+ InP-PInP/CdS and P+ GaAs-pGaAs/CdS structures in the chloride gas - transporting system, chemical etching, structures location in the reactor, reactor blow - down witn hydrogen, furnace heating, the CdS layer growing is realized after locating the reactor into the furnace and temperature stabilization, then the reactor is drawn out of the furnace, by that, the speed of the hydrogen flow and growing one during the growing in the source zone are correspondingly of 150 cm3/min and 220...240 cm3/min., and during the temperature stabilization and cooling the speed makes correspondingly 20...30 cm3/min and 1000 cm3/min.The technical result consists in the time decreasing of the temperature stabilization in the reactor that provides the strates electrophysical parameters and source component conservation, heterostructures interdiffusion process inhibition.
MD94-0004A 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining MD626G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Publications (3)

Publication Number Publication Date
MD940004A MD940004A (en) 1995-07-31
MD626F2 MD626F2 (en) 1996-11-29
MD626G2 true MD626G2 (en) 1997-06-30

Family

ID=19738508

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0004A MD626G2 (en) 1994-01-13 1994-01-13 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining

Country Status (1)

Country Link
MD (1) MD626G2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.Choy Appl. Physics, v. 8, nr. 4, 1977 (M. Bettini, K. J. Bochmann. E. Buchler, J. L. Choy, S.Wagner "Preparation of CdS/InP solar cells by chemical vapor deposition of CdS", p. 1603-1606). *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Also Published As

Publication number Publication date
MD626F2 (en) 1996-11-29
MD940004A (en) 1995-07-31

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

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