MD626G2 - Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining - Google Patents
Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtainingInfo
- Publication number
- MD626G2 MD626G2 MD94-0004A MD940004A MD626G2 MD 626 G2 MD626 G2 MD 626G2 MD 940004 A MD940004 A MD 940004A MD 626 G2 MD626 G2 MD 626G2
- Authority
- MD
- Moldova
- Prior art keywords
- cds
- reactor
- pgaas
- pinp
- inp
- Prior art date
Links
Abstract
The invention relates to the semiconductor technique and may be used at the obtaining in the open gas - transporting - system P+ InP-PInP/CdS and P+ GaAs-pGaAs/CdS heterostructures for solar and photo cells.For rising the yield and quality of the solar cells electrophysical parameters by means of the proposed process, including the grow of the P+ InP-PInP/CdS and P+ GaAs-pGaAs/CdS structures in the chloride gas - transporting system, chemical etching, structures location in the reactor, reactor blow - down witn hydrogen, furnace heating, the CdS layer growing is realized after locating the reactor into the furnace and temperature stabilization, then the reactor is drawn out of the furnace, by that, the speed of the hydrogen flow and growing one during the growing in the source zone are correspondingly of 150 cm3/min and 220...240 cm3/min., and during the temperature stabilization and cooling the speed makes correspondingly 20...30 cm3/min and 1000 cm3/min.The technical result consists in the time decreasing of the temperature stabilization in the reactor that provides the strates electrophysical parameters and source component conservation, heterostructures interdiffusion process inhibition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD94-0004A MD626G2 (en) | 1994-01-13 | 1994-01-13 | Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD94-0004A MD626G2 (en) | 1994-01-13 | 1994-01-13 | Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining |
Publications (3)
Publication Number | Publication Date |
---|---|
MD940004A MD940004A (en) | 1995-07-31 |
MD626F2 MD626F2 (en) | 1996-11-29 |
MD626G2 true MD626G2 (en) | 1997-06-30 |
Family
ID=19738508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MD94-0004A MD626G2 (en) | 1994-01-13 | 1994-01-13 | Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD626G2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4280C1 (en) * | 2013-09-04 | 2014-10-31 | Государственный Университет Молд0 | pInP-nCdS structure growth method |
-
1994
- 1994-01-13 MD MD94-0004A patent/MD626G2/en active IP Right Grant
Non-Patent Citations (1)
Title |
---|
J.Choy Appl. Physics, v. 8, nr. 4, 1977 (M. Bettini, K. J. Bochmann. E. Buchler, J. L. Choy, S.Wagner "Preparation of CdS/InP solar cells by chemical vapor deposition of CdS", p. 1603-1606). * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
Also Published As
Publication number | Publication date |
---|---|
MD626F2 (en) | 1996-11-29 |
MD940004A (en) | 1995-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG3A | Granted patent for invention | ||
IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140113 |